Incorporating Graphitic Carbon Nitride (g‐C₃N₄) Quantum Dots into Bulk‐Heterojunction Polymer Solar Cells Leads to Efficiency Enhancement

Abstract

.36%, and 9.18%, which are enhanced by ≈17.5%, 11.6%, and 11.8%, respectively, compared to that of the reference (undoped) devices. The PCE enhancement of the C 3 N 4 QDs doped BHJ-PSC device is found to be primarily attributed to the increase of short-circuit current ( J sc ), and this is confi rmed by external quantum effi ciency (EQE) measurements. The effects of C 3 N 4 QDs on the surface morphology, optical absorption and photoluminescence (PL) properties of the active layer fi lm as well as the charge transport property of the device are investigated, revealing that the effi ciency enhancement of the BHJ-PSC devices upon C 3 N 4 QDs doping is due to the conjunct effects including the improved interfacial contact between the active layer and the hole transport layer due to the increase of the roughness of the active layer fi lm, the facilitated photoinduced electron transfer from the conducting polymer donor to fullerene acceptor, the improved conductivity of the active layer, and the improved charge (hole and electron) transport.

Hybrids of Fullerenes and 2D Nanomaterials

“…[115] As an emerging graphene-analogous 2D nanomaterial, g-C 3 N 4 also has a high thermal and chemical stability as well as unique electronic and optical properties, making it a promising material for photocatalysis and energy-related applications. [116,117] The advantage of g-C 3 N 4 as a metal-free catalyst toward organic pollutants and water splitting for hydrogen production under visible-light irradiation has been extensively reported. [116,118] However, the photocatalytic activity of bare C 3 N 4 is limited due to the high recombination rate of photogenerated electron-hole pairs resulting from its relatively large band gap (≈2.7 eV) and the existence of contact resistance between the nanosheets.…”

Characterization of urea derived polymeric carbon nitride and resultant thermally vacuum deposited amorphous thin films: Structural, chemical and photophysical properties

“…Efforts have been focused in extending application of p-CN to be used as a thin film in optoelectronics, such as light emitting devices, optical sensors, photocathodes [45,46], etc.…”

Carbon Nitride/Reduced Graphene Oxide Film with Enhanced Electron Diffusion Length: An Efficient Photo‐Electrochemical Cell for Hydrogen Generation

“…[6,7] Despite significant progress in this field, [3,[10][11][12][13][14][15][16][17] semiconductors that fulfill all these requirements rarely exist today, and the production of such semiconductors is still much sought after.Over the past few years, polymeric graphitic carbon nitride (CN) has attracted widespread attention due to its outstanding electronic properties, which have been exploited in various applications, including photo-and electrocatalysis, [18][19][20][21][22][23][24] heterogeneous catalysis, [25][26][27][28] CO 2 reduction, [29][30][31] water splitting, [32][33][34][35][36][37][38][39][40] light-emitting diodes, [41] photovoltaics, [42][43][44] and sensing. [6,7] Despite significant progress in this field, [3,[10][11][12][13][14]…”

“…Over the past few years, polymeric graphitic carbon nitride (CN) has attracted widespread attention due to its outstanding electronic properties, which have been exploited in various applications, including photo-and electrocatalysis, [18][19][20][21][22][23][24] heterogeneous catalysis, [25][26][27][28] CO 2 reduction, [29][30][31] water splitting, [32][33][34][35][36][37][38][39][40] light-emitting diodes, [41] photovoltaics, [42][43][44] and sensing. [45][46][47] Its unique and tunable optical, chemical, and catalytic properties, alongside its low price and remarkably high stability to oxidation, make it a very attractive material for PEC applications.…”