Photostable Dynamic Rectification of One-Dimensional Schottky Diode Circuits with a ZnO Nanowire Doped by H during Passivation

Ryu, Boram; Lee, Young Tack; Lee, Kwang H.; Ha, Ryong; Park, Ji Hoon; Choi, Heon Jin; Im, Seongil

doi:10.1021/nl202239c

Cited by 35 publications

(42 citation statements)

References 32 publications

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“…This means that we used B8 layers of WSe 2 and B9 layers of MoS 2 for a p-n diode. 28,29 In contrast, CYTOP encapsulation appeared to drastically improve the electrical performance of the device; although some amount of I-V hysteresis (B2 V) was still observed, the ideality factor was much reduced to Z = B2.5 which is 20 times smaller than that of the pristine device. 1a-f. Fig.…”

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confidence: 93%

Enhanced device performances of WSe₂–MoS₂ van der Waals junction p–n diode by fluoropolymer encapsulation

et al. 2015

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Two-dimensional heterojunction diodes with WSe 2 and MoS 2 nanoflakes respectively as p-and n-type semiconductors were fabricated on both glass and SiO 2 /p + -Si by direct imprinting. Superior electrostatic and dynamic performances were acquired from the diode on glass when an electric dipole-containing fluoropolymer was employed for encapsulation: forward and reverse current toward ideal behavior, enhanced aging/ambient stability, and improved dynamic rectification resulted. † Electronic supplementary information (ESI) available: I-V curves of another p-n diode on a SiO 2 /p + -Si substrate, parasitic capacitor induced by SiO 2 dielectric, photo-response of the unencapsulated pristine p-n diode and ambient stability of the CYTOP-capped diode. See

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confidence: 93%

Enhanced device performances of WSe₂–MoS₂ van der Waals junction p–n diode by fluoropolymer encapsulation

et al. 2015

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“…Figure b shows the I–V curves measured at RT in the range of −8 to +8 V performed 5 h after the fabrication as well as 10 d after the first measurements (under exposure to air) showing an excellent stability, i.e., no considerable deviations in device parameters were found, including rectifying behavior. Also, from Figure b it can be observed, that reverse breakdown does not occur, even when the applied bias voltage approaches a value of −8 V, which is higher compared to the reverse breakdown voltage of a single Si NW diode and comparable with other Schottky diodes based on single structures of ZnO NW/NB, GaN, and CdS NB . Furthermore, the reverse current does not show values higher than 0.3 nA for applied bias voltages up to −8 V (not shown).…”

Section: Resultsmentioning

confidence: 61%

Schottky Diode Based on a Single Carbon–Nanotube–ZnO Hybrid Tetrapod for Selective Sensing Applications

Postica

Schütt

Adelung

et al. 2017

Adv Materials Inter

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In this work, a general strategy to change the selectivity of individual ZnO tetrapod (ZnO‐T)‐Schottky diode‐based devices by hybridization with carbon nanotubes (CNT) is presented. A microscale Schottky diode based on Pt‐nanocontacts to a single ZnO‐T covered/hybridized with CNT, designated as ZnO‐T−CNT, is fabricated and the temperature‐dependent UV and gas sensing properties are investigated. The gas sensing investigations indicate that due to the presence of CNTs on the surface of the ZnO‐T a higher NH3 response (factor of ≈90) at room temperature is observed, compared to H2 gas response (≈14). This effect is attributed to the excellent charge transfer between the CNTs and ZnO‐T as well as NH3 molecule adsorption on the surface of the CNTs, which can efficiently reduce the Schottky barrier height. By increasing the operating temperature up to 150 °C (starting from 50 °C) the NH3 response is considerably reduced, leading to an excellent H2 gas selectivity. In the case of H2 gas, an increase in temperature up to 150 °C shows a considerably increase in gas response of about 140 (≈10 times). Thus, this device offers the possibility to be used for selective detection of NH3 and H2 by only changing the operating temperature. Furthermore, by using the developed strategy/approach other materials can be used for the fabrication of gas sensors with selectivity to other gases.

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“…All the oxide deposition processes were performed at room temperature (RT) to prevent any weaknesses of a glass substrate at high process temperatures, which are, for instance, impurity diffusion and high fabrication cost. Our transparent diode circuits are composed of a driving diode (DD) and a resistor diode (RD) which are serially but face‐to‐face connected to each other while the RD is a few times larger than DD in area 4, 5. As a result, we nicely demonstrate a dynamic rectification from an almost transparent diode circuit.…”

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Transparent p‐NiO/n‐ZnO diodes used in circuit rectifiers

Bae

Lee²,

Lee

et al. 2012

Physica Rapid Research Ltrs

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We report on the fabrication of a transparent photostable cell circuit composed of drive and resistor diodes which are face‐to‐face connected to each other with different device area. The diodes consisted of e‐beam evaporated p‐NiO on sputter‐deposited n‐ZnO for p/n diode formation on indium‐tin‐oxide glass. Our transparent diodes show photostable rectifying behavior, about 103 on/off current ratio and even dynamic rectification at a maximum frequency of 100 Hz AC input signal in ambient light. The noticeable photo‐responsivity of the circuit was obtained only under ultraviolet (UV) light. We conclude that our transparent diode circuit is promising in enriching the field of transparent device electronics. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Photostable Dynamic Rectification of One-Dimensional Schottky Diode Circuits with a ZnO Nanowire Doped by H during Passivation

Cited by 35 publications

References 32 publications

Enhanced device performances of WSe₂–MoS₂ van der Waals junction p–n diode by fluoropolymer encapsulation

Enhanced device performances of WSe₂–MoS₂ van der Waals junction p–n diode by fluoropolymer encapsulation

Schottky Diode Based on a Single Carbon–Nanotube–ZnO Hybrid Tetrapod for Selective Sensing Applications

Transparent p‐NiO/n‐ZnO diodes used in circuit rectifiers

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Photostable Dynamic Rectification of One-Dimensional Schottky Diode Circuits with a ZnO Nanowire Doped by H during Passivation

Cited by 35 publications

References 32 publications

Enhanced device performances of WSe2–MoS2 van der Waals junction p–n diode by fluoropolymer encapsulation

Enhanced device performances of WSe2–MoS2 van der Waals junction p–n diode by fluoropolymer encapsulation

Schottky Diode Based on a Single Carbon–Nanotube–ZnO Hybrid Tetrapod for Selective Sensing Applications

Transparent p‐NiO/n‐ZnO diodes used in circuit rectifiers

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Product

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Enhanced device performances of WSe₂–MoS₂ van der Waals junction p–n diode by fluoropolymer encapsulation

Enhanced device performances of WSe₂–MoS₂ van der Waals junction p–n diode by fluoropolymer encapsulation