Photosensitivity of CuBiSe₂ Thin Film Deposited by Vacuum Evaporation Technique

Abstract

CuBiSe2 (CBSe) thin film was prepared by vacuum evaporation. The deposited film was characterized by X‐ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X‐ray (EDX), UV–visible specroscopy, and I–V analysis. XRD analysis indicates the formation of cubic CBSe thin film, and the corresponding EDX spectrum confirms the stoichiometry composition of CBSe. In the AFM images, the majority of the particles are granular, and the surface roughness is 8.86 nm. The optical absorption coefficient is >104 in the visible region and the bandgap energy is calculated to be 1.84 eV. The photosensitivity of the film is 181%.

Phase transformation and photoelectrochemical characterization of Cu/Bi and Cu/Sb based selenide alloys as promising photoactive electrodes

“…Alternatively, the recent experimental studies are shifting toward low cost, abundant, and environmentally friendly light absorber materials to overcome the previous restrictions. 5,6,8 Upon the technological perspectives, the Shockley-Queisser efficiency limit requires proper values of bandgap energies for each light absorbing material to be more efficient for harvesting a wide range of solar spectrum. Accordingly, huge considerable efforts have been devoted to studying the ternary compounds in the groups (I-V-VI) including copper bismuth and copper antimony selenides (CBSe and CASe) for improving thin film PV applications.…”

“…10,11 Thereby, wide optical bandgaps (1.5-2.1 eV) and (1.05-1.96 eV) have previously been reported for CBSe and CASe, respectively. 8,[12][13][14] Eventually, the indium free light absorber material Cu(Sb,Bi) (S,Se) 2 has possessed higher values of absorption coefficient than those of the CuInS 2 and CuInSe 2 materials reaching the double value. 15 Moreover, these compounds have strong optical absorption compared to chalcopyrite CuIn(S,Se) 2 and kesterite Cu 2 ZnSn(S,Se) 4 .…”

“…11,15 Plainly, various ternary structures of CBSe or CASe materials have been prepared using different fabrication techniques such as electrodeposition, 16 mechanical alloying from the elemental precursors (solid-state reaction), 11,12,17 chemical precipitation, 13,18,19 microwave synthesis, 20 solvothermal synthesis, 21 and the fusion method. 22 Obviously, the monocrystalline CuBiSe 2 phase of the cubic structure has been obtained by the vacuum evaporation technique, 8 while polycrystalline Cu 1.6 Bi 4.8 Se 8 of the triclinic structure could be easily prepared by the electrodeposition technique. 9 Furthermore, a new orthorhombic structure of formula Cu 6 BiSe 4 was also discovered as a naturally formed mineral in the telethermal vein-type deposit with selenides at the El-Dragon mine in Bolivia.…”

Influence of the electrochemical processing parameters on the photocurrent–voltage conversion characteristics of copper bismuth selenide photoactive films

“…Consequentially, these distinguishable features and characteristics give the CBSe material with its various systems the opportunity in different applications mainly as light harvesting materials in PV thin film solar cells and photocatalytic applications as reported in different previous studies [11,14]. In addition, CBSe materials possess high photosensitivity that generates a considerable photocurrent revealing its ability for optoelectronic devices [15].…”

Co-electrodeposition of Cu3BiS3 thin films in weakly alkaline aqueous solutions for photovoltaic application

“…In recent years, Cu 2 ZnSn(S,Se) 4 (CZTS) and Sb 2 (S,Se) 3 are the cream of the crop among various candidates which the former achieved 12.6 % PCE in 2014 and the latter achieved 10.5 % PCE in 2020 [7,8]. Besides, some other Cu-based ternary materials are also promising and wait to be explored, including Cu 2 SnS 3 , CuBiSe 2 , CuSbS 2 , and so on [9][10][11].…”