Photosensitive structure on CdGa2S4 single crystals

Rud, V. Yu.; Rud, Yu. V.; Vaipolin, A. A.; Bodnar, I. V.; Fernelius, Nils C.

doi:10.1134/1.1626209

Cited by 13 publications

(5 citation statements)

References 3 publications

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“…The stoichiometric charge of Ga and Se, and the nominal 0, 1.1, 2.5, 5, 7, 11 mass.% S (x=0, 0.05, 0.11, 0.22, 0.29, 0.44, 1) was weighed out with an accuracy of ± 0.1 mg. Synthesis ampoules were loaded up to 65% in volume to minimize the quantity of residual gases and cosequent interaction so as to improve optical quality. Other details on the synthesis process are reported elsewhere 30 . After several hours of melt homogenization during the synthesis process, the temperature was slowly decreased to 40 K below the melting point of 1238 K of the compound at the rate of ~10 K/h.…”

Section: Crystal Growth and Characterizationmentioning

confidence: 99%

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Aspects for efficient wide spectral band THz generation via CO₂laser down conversion

et al. 2015

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Detailed model study of THz generation by CO 2 laser down-conversion in pure and solid solution crystals GaSe 1-x S x is carried out for the first time. Both forward and backward collinear interactions of common (eo-e, oe-e, oe-o, oo-e, ee-o) and original (ee-e, oo-o) types are considered. Possibility of realization, phase matching angles and figure of merits are estimated for line mixing within 9 μm and 10 μm emission bands, as well between them. Dispersion properties of o-and e-wave refractive indices and absorption coefficients for GaSe, GaS and GaSe 1-x S x crystals were preliminary measured by THz-TDS, approximated in the equation form and then used in the study. Estimated results are presented in the form of 3-D figures that are suitable for rapid analyses of DFG parameters. The most efficient type of interaction is eo-o type. Optimally doped (x = 0.09-0.13) GaSe 1-x S x crystals are from 4 to 5 times more efficient at limit pump intensity than not doped GaSe crystals.

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Section: Crystal Growth and Characterizationmentioning

confidence: 99%

“…The sealed growth ampoule was loaded into a furnace having a temperature gradient of ~15 K/cm at the estimated level of crystallization front. After homogenization of the melt at the temperature 30 …”

Section: Crystal Growth and Characterizationmentioning

confidence: 99%

Aspects for efficient wide spectral band THz generation via CO₂laser down conversion

et al. 2015

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“…Chemical vapor transport methodology is adopted by Bodnar et al [5] to develop single crystal of CdGa 2 S 4 . Rud et al [6] have implemented the chemical vapor deposition technique to generate single crystal of CdGa 2 S 4 . Vaipolin et al [7] have reported photosensitive structure based single crystal of CdGa 2 Se 4 .…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Analysis of CdGa<sub>2</sub>X<sub>4</sub> (X= S, Se): A Promising Material for Solar Cells

Kumar

Sahariya

Soni

et al. 2017

MSF

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In this paper, the optoelectronic nature of the CdGa2X4 (X = S, Se) solar cell materials are examined using full potential linear augmented plane wave (FP-LAPW) method as embodied in WIEN2K code. In present computation, we have used most suitable modified Backe-Johnson (mBJ) potential under the framework of density functional theory (DFT). The calculated electronic properties like energy band structure and density of states spectra show that these materials exhibit a direct band gap (Γ–Γ) result of 3.22 eV and 2.36 eV for CdGa2S4 and CdGa2Se4 compounds, respectively. Absorption spectra for CdGa2X4 (X = S, Se) compounds have been studied and it has been found that above the band gap, absorption are taking place and it covers wide visible spectrum energy range. On the basis of calculated band gap, density of states and absorption coefficient spectra, it is found that these compounds can be suitably applicable in optoelectronic devices such as solar cell. The evaluated properties pose well agreement with available experimental data.

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“…The binary cadmium chalcogenides, Cd X ( X = S, Se, Te), and the ternary semiconducting compounds, AB 2 X 4 ( A = Cd, Zn, Hg; B = Al, Ga, In; X = S, Se, Te) are investigated for possessing a wide bandgap and application in the photoluminescence and optoelectronic devices . The electrophotographic layers of these semiconductors illustrate a photographic distinction with high quality and great resolution .…”

Section: Introductionmentioning

confidence: 99%

Role of the Crystal Lattice Constants and Band Structures in the Optoelectronic Spectra of CdGa₂S₄ by DFT Approaches

Aliabad

Vaezi

Basirat

et al. 2017

Zeitschrift anorg allge chemie

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The electronical and optical properties of CdGa 2 S 4 under high pressures were studied using the full potential linearized augmented plane wave (FP-LAPW) method within the GGA and mBJ exchange correlation potentials from 0.0 to 16.92 GPa. The obtained results show that the lattice constants, bandgap values, and optoelectronic properties are sensitive to applied external pressures. The mBJ results indicate that the bandgap increases and the static dielectric con-* Dr. H. A. Rahnamaye Aliabad 839 stants decrease with increasing the pressure. The two none zero dielectric tensor components show considerable anisotropy between the perpendicular and parallel components. The maximum absorption for x direction in all pressures takes place in vacuum UV region. Also, the plasma frequency shifts to the higher energies with increasing the pressure for application in optical devices. The calculated results by mBJ are in close agreement with the experimental values.

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Photosensitive structure on CdGa2S4 single crystals

Cited by 13 publications

References 3 publications

Aspects for efficient wide spectral band THz generation via CO₂laser down conversion

Aspects for efficient wide spectral band THz generation via CO₂laser down conversion

Optoelectronic Analysis of CdGa<sub>2</sub>X<sub>4</sub> (X= S, Se): A Promising Material for Solar Cells

Role of the Crystal Lattice Constants and Band Structures in the Optoelectronic Spectra of CdGa₂S₄ by DFT Approaches

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Photosensitive structure on CdGa2S4 single crystals

Cited by 13 publications

References 3 publications

Aspects for efficient wide spectral band THz generation via CO2laser down conversion

Aspects for efficient wide spectral band THz generation via CO2laser down conversion

Optoelectronic Analysis of CdGa<sub>2</sub>X<sub>4</sub> (X= S, Se): A Promising Material for Solar Cells

Role of the Crystal Lattice Constants and Band Structures in the Optoelectronic Spectra of CdGa2S4 by DFT Approaches

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Aspects for efficient wide spectral band THz generation via CO₂laser down conversion

Aspects for efficient wide spectral band THz generation via CO₂laser down conversion

Role of the Crystal Lattice Constants and Band Structures in the Optoelectronic Spectra of CdGa₂S₄ by DFT Approaches