Photosensitive bismuth ions in lead tungstate

Vazhenin, V. A.; Потапов, А. П.; Asatryan, Georgi; Nikl, M.

doi:10.1134/s1063783413040343

Cited by 6 publications

(11 citation statements)

References 20 publications

(22 reference statements)

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“…No traces of Bi 2+ centers were detected in both cases on the contrary to Ref. . The Bi 4+ centers do not appear in this sample as well.…”

Section: Resultscontrasting

confidence: 83%

“…[103]), it is not excluded that under photoexcitation of PbWO 4 :Bi in the 3.5-3.6 eV energy range, the photostimulated electron transfer from the valence band (VB) to the ground state of a single Bi 3+ ion can also take place, resulting in the creation of an electron Bi 2+ center. The single Bi 2+ centers were really observed by EPR in the UV-irradiated PbWO 4 :Bi crystals [27]. The electron transfer to Bi 5+ ions, which can also exist in the crystals studied, should result in the formation of the electron Bi 4+ ions, which are detected by EPR in the present work.…”

Section: Bi 4þsupporting

confidence: 58%

“…According to Ref. [27], where the EPR of electron Bi 2þ centers has been observed for the first time, these centers are stable up to 170 K. It is not excluded that the TSL peak at 163 K appears due to thermal release of electrons trapped at Bi 3þ ions substituting for the Pb 2þ ions in the regular PbWO 4 crystal lattice sites. The data shown in Fig.…”

Section: Thermally Stimulated Luminescencementioning

confidence: 98%

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Luminescence and photo‐thermally stimulated defect‐creation processes in Bi³⁺‐doped single crystals of lead tungstate

Buryi

Boháček

Chernenko

et al. 2016

Physica Status Solidi (b)

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For the first time, photoluminescence of PbWO 4 :Bi crystals with different bismuth contents is studied by the time-resolved spectroscopy methods at 4.2-300 K. Photo-thermally stimulated processes of electron and hole centers creation under selective UV irradiation of the crystal in the 3-5 eV energy range and the 4.2-200 K temperature range are clarified, and the optically created electron and hole centers are identified by the thermally stimulated luminescence and electron spin resonance methods. The 2.2 eV emission of PbWO 4 :Bi crystals, excited in the Bi 3þ -related absorption band overlapped with the exciton absorption band, is shown to be of an excitonic origin and is suggested to arise from the excitons of two types localized around two different Bi 3þ -related centers.No emission, arising from the electron transitions between the energy levels of Bi 3þ ions, is observed. Photoexcitation of PbWO 4 :Bi crystals in the Bi 3þ -related absorption region results also in the creation of electron and hole centers. Three new paramagnetic centers are identified: (i) two holes trapped at two regular oxygen ions located close to a Bi 3þ ion and a lead vacancy V Pb (the {2O -À Bi 3þ À V Pb }-type hole centers); (ii) Bi 4þ centers; and (iii) the O À -type hole centers. The concentration of single (non-compensated) oxygen and lead vacancies as traps for electrons and holes, respectively, is found to be small. The processes resulting in the appearance of the Bi 3þ -related localized exciton emission and in the creation of Bi-related electron and hole centers are discussed.

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“…No traces of Bi 2+ centers were detected in both cases on the contrary to Ref. . The Bi 4+ centers do not appear in this sample as well.…”

Section: Resultscontrasting

confidence: 83%

Section: Bi 4þsupporting

confidence: 58%

Section: Thermally Stimulated Luminescencementioning

confidence: 98%

See 1 more Smart Citation

Luminescence and photo‐thermally stimulated defect‐creation processes in Bi³⁺‐doped single crystals of lead tungstate

Buryi

Boháček

Chernenko

et al. 2016

Physica Status Solidi (b)

Self Cite

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show abstract

“…In this case, besides the radiative electron-hole recombination, resulting in the appearance of the Bi 3+ -related exciton-like luminescence, the electron Bi 2+ centers and the self-trapped holes can also be optically created. These centers were indeed detected in EPR [73,193].…”

Section: On Possible Mechanisms Of Processes Responsible For the Vismentioning

confidence: 71%

“…The data obtained by the TSL and EPR methods on the origin of stable electron and hole centers created under photoexcitation of PbWO 4 :Bi crystals in the lowest-energy absorption band [73,193] indicate that, in principle, all the above-mentioned processes can take place. As both the single Bi 3+ ions and the Bi 3+ ions associated with lead vacancies can exist in PbWO 4 , the process (ii) seems to be more preferable for {Bi 3+ -V Pb } centers with a negative excess charge, but the process (iii), for single Bi 3+ centers with a positive excess charge.…”

Section: Resultsmentioning

confidence: 96%

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

et al. 2020

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Bi-doped compounds recently became the subject of an extensive research due to their possible applications as scintillator and phosphor materials. The oxides co-doped with Bi3+ and trivalent rare-earth ions were proposed as prospective phosphors for white light-emitting diodes and quantum cutting down-converting materials applicable for enhancement of silicon solar cells. Luminescence characteristics of different Bi3+-doped materials were found to be strongly different and ascribed to electronic transitions from the excited levels of a Bi3+ ion to its ground state, charge-transfer transitions, Bi3+ dimers or clusters, radiative decay of Bi3+-related localized or trapped excitons, etc. In this review, we compare the characteristics of the Bi3+-related luminescence in various compounds; discuss the possible origin of the corresponding luminescence centers as well as the processes resulting in their luminescence; consider the phenomenological models proposed to describe the excited-state dynamics of the Bi3+-related centers and determine the structure and parameters of their relaxed excited states; address an influence of different interactions (e.g., spin-orbit, electron-phonon, hyperfine) as well as the Bi3+ ion charge and volume compensating defects on the luminescence characteristics. The Bi-related luminescence arising from lower charge states (namely, Bi2+, Bi+, Bi0) is also reviewed.

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Anti‐Thermal‐Quenching Bi³⁺ Luminescence in a Cyan‐Emitting Ba₂ZnGe₂O₇:Bi Phosphor Based on Zinc Vacancy

Wei

Yang

Gao

et al. 2020

Laser & Photonics Reviews

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Thermal quenching (TQ) of phosphor is one of the biggest challenges to develop high‐quality white light‐emitting diodes (w‐LEDs). Herein, an anti‐thermal‐quenching (anti‐TQ) property in cyan‐emitting Ba2ZnGe2O7:Bi3+ phosphor is reported. At 150 °C, its emission intensity increases to 114% of the original intensity at 25 °C. Especially, the integrated emission intensity reaches 138%, 148%, and 134% at 150, 200, and 250 °C, respectively, by artificially creating zinc and oxygen vacancy defect. The anti‐TQ phenomenon is mainly attributed to high structure rigidity and strong ability to compensate emission loss during thermal generation process. Thermal‐induced emission compensation mainly stems from self‐oxidization behavior of Bi2+ in zinc vacancy and the presence of oxygen vacancy defect. Oxygen vacancy is induced by native zinc vacancy and charge imbalance between Bi3+ and Ba2+ ions. The strategy to create oxygen vacancy defect and design self‐oxidization process of Bi opens a new insight to exploit anti‐TQ phosphors for high‐quality w‐LEDs applications.

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Photosensitive bismuth ions in lead tungstate

Cited by 6 publications

References 20 publications

Luminescence and photo‐thermally stimulated defect‐creation processes in Bi³⁺‐doped single crystals of lead tungstate

Luminescence and photo‐thermally stimulated defect‐creation processes in Bi³⁺‐doped single crystals of lead tungstate

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Anti‐Thermal‐Quenching Bi³⁺ Luminescence in a Cyan‐Emitting Ba₂ZnGe₂O₇:Bi Phosphor Based on Zinc Vacancy

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Photosensitive bismuth ions in lead tungstate

Cited by 6 publications

References 20 publications

Luminescence and photo‐thermally stimulated defect‐creation processes in Bi3+‐doped single crystals of lead tungstate

Luminescence and photo‐thermally stimulated defect‐creation processes in Bi3+‐doped single crystals of lead tungstate

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Anti‐Thermal‐Quenching Bi3+ Luminescence in a Cyan‐Emitting Ba2ZnGe2O7:Bi Phosphor Based on Zinc Vacancy

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Luminescence and photo‐thermally stimulated defect‐creation processes in Bi³⁺‐doped single crystals of lead tungstate

Luminescence and photo‐thermally stimulated defect‐creation processes in Bi³⁺‐doped single crystals of lead tungstate

Anti‐Thermal‐Quenching Bi³⁺ Luminescence in a Cyan‐Emitting Ba₂ZnGe₂O₇:Bi Phosphor Based on Zinc Vacancy