Photoresponsive behavior of electron-beam irradiated MoS2 films

Gu, Hyun Ho; Kim, Bong Ho; Yoon, Young Joon

doi:10.1063/1.5038144

Cited by 9 publications

(7 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure a also shows that, after irradiation, the transfer characteristic slowly recovers approaching the initial state in a time of the order of hours. The electron beam generates electron–hole pairs in both the channel layer and the underlying dielectric and promotes the formation of defects . This favors charge trapping and degrades the PdSe 2 electrical conductivity.…”

Section: Resultsmentioning

confidence: 99%

“…The electron beam generates electron-hole pairs in both the channel layer and the underlying dielectric and promotes the formation of defects. [43,47,[70][71][72] This favors charge trapping and degrades the PdSe2 electrical conductivity. The 10 keV electrons are absorbed mostly in the SiO2 layer, where they create a pile-up of negative charge, which screens the gate field and affects the channel carrier conductivity.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors

Bartolomeo

Pelella

Liu

et al. 2019

Adv Funct Materials

111

View full text Add to dashboard Cite

Few-layer palladium diselenide (PdSe 2 ) field effect transistors are studied under external stimuli such as electrical and optical fields, electron irradiation, and gas pressure. The ambipolar conduction and hysteresis are observed in the transfer curves of the as-exfoliated and unprotected PdSe 2 material. The ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environments are tuned. The prevailing p-type transport observed at atmospheric pressure is reversibly turned into a dominant n-type conduction by reducing the pressure, which can simultaneously suppress the hysteresis. The pressure control can be exploited to symmetrize and stabilize the transfer characteristics of the device as required in highperformance logic circuits. The transistors are affected by trap states with characteristic times in the order of minutes. The channel conductance, dramatically reduced by the electron irradiation during scanning electron microscope imaging, is restored after an annealing of several minutes at room temperature. The work paves the way toward the exploitation of PdSe 2 in electronic devices by providing an experiment-based and deep understanding of charge transport in PdSe 2 transistors subjected to electrical stress and other external agents.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors

Bartolomeo

Pelella

Liu

et al. 2019

Adv Funct Materials

111

View full text Add to dashboard Cite

show abstract

“…Generally, there are two types of methods to introduce defects in MoS 2 flakes, which are divided into the top-down and bottom-up routes. The top-down method needs the assistance of electron beam irradiation, plasma exposure, , heating treatment in a special atmosphere, etc., while the bottom-up method introduces defects during the CVD growth process . For example, sulfur treatment was used to passivate sulfur vacancies in monolayer MoS 2 to improve the electrical performances .…”

Section: Introductionmentioning

confidence: 99%

Engineering of Oxidized Line Defects on CVD-Grown MoS₂ Flakes

Zhang

Sun

et al. 2022

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Defect engineering is a promising means to create patterns on two-dimensional (2D) materials to enable unconventional properties. However, defects usually exist abundantly and randomly on 2D materials, which makes it difficult to tune the properties in a controllable manner. Therefore, it is highly desirable to find out the formation mechanism and controllable fabrication method of defects on 2D materials. In this report, we systematically investigated the line defects on monolayer MoS 2 formed by introducing oxygen during the CVD growth. The line defects were formed due to the overoxidation of the MoS 2 flake along crystal boundaries, which bulged out of the surface and had the same surface potential as the basal plane. Therefore, the MoS 2 flake with line defects maintained the optical and electrical integrity but exhibited distinct properties as compared to the pristine one. By controlling the oxygen concentration during CVD growth, the density of the line defects can be precisely controlled to implement controllable property tuning. Moreover, during the transfer process, the MoS 2 flake was easily broken along the line defects, which increased the active sites to achieve enhanced hydrogen evolution reaction performance. This work is expected to inspire the development of patterned functional 2D materials by defect engineering.

show abstract

“…26 However, the EBI-treated MoS 2 also shows extremely low photoresponsivity due to the insufficient crystallinity and sulfur vacancies. 27 In this study, we present MoS 2 phototransistor arrays constructed on large-dimensional MoS 2 films grown using a radio-frequency (RF) magnetron sputtering deposition method combined with post-treatments processes. High-quality centimeter-scale trilayer MoS 2 was achieved by sputtering, EBI, and sulfurization.…”

Section: Introductionmentioning

confidence: 99%

“…Electron beam irradiation (EBI) is used to induce atomic rearrangement through inelastic scattering, resulting in the crystallization of MoS 2 . However, the EBI-treated MoS 2 also shows extremely low photoresponsivity due to the insufficient crystallinity and sulfur vacancies …”

Section: Introductionmentioning

confidence: 99%

Exceptionally Uniform and Scalable Multilayer MoS₂ Phototransistor Array Based on Large-Scale MoS₂ Grown by RF Sputtering, Electron Beam Irradiation, and Sulfurization

Park

Liu

Kim

et al. 2020

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

Two-dimensional molybdenum disulfide (MoS2) has emerged as a promising material for optoelectronic applications because of its superior electrical and optical properties. However, the difficulty in synthesizing large-scale MoS2 films has been recognized as a bottleneck in uniform and reproducible device fabrication and performance. Here, we proposed a radio-frequency magnetron sputter system, and post-treatments of electron beam irradiation and sulfurization to obtain large-scale continuous and high-quality multilayer MoS2 films. Large-area uniformity was confirmed by no deviation of electrical performance in fabricated MoS2 thin-film transistors (TFTs) with an average on/off ratio of 103 and a transconductance of 0.67 nS. Especially, the photoresponsivity of our MoS2 TFT reached 3.7 A W–1, which is a dramatic improvement over that of a previously reported multilayer MoS2 TFT (0.1 A W–1) because of the photogating effect induced by the formation of trap states in the band gap. Finally, we organized a 4 × 4 MoS2 phototransistor array with high photosensitivity, linearity, and uniformity for light detection, which demonstrates the great potential of 2D MoS2 for future-oriented optoelectronic devices.

show abstract

Photoresponsive behavior of electron-beam irradiated MoS2 films

Cited by 9 publications

References 33 publications

Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors

Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors

Engineering of Oxidized Line Defects on CVD-Grown MoS₂ Flakes

Exceptionally Uniform and Scalable Multilayer MoS₂ Phototransistor Array Based on Large-Scale MoS₂ Grown by RF Sputtering, Electron Beam Irradiation, and Sulfurization

Contact Info

Product

Resources

About

Photoresponsive behavior of electron-beam irradiated MoS2 films

Cited by 9 publications

References 33 publications

Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors

Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors

Engineering of Oxidized Line Defects on CVD-Grown MoS2 Flakes

Exceptionally Uniform and Scalable Multilayer MoS2 Phototransistor Array Based on Large-Scale MoS2 Grown by RF Sputtering, Electron Beam Irradiation, and Sulfurization

Contact Info

Product

Resources

About

Engineering of Oxidized Line Defects on CVD-Grown MoS₂ Flakes

Exceptionally Uniform and Scalable Multilayer MoS₂ Phototransistor Array Based on Large-Scale MoS₂ Grown by RF Sputtering, Electron Beam Irradiation, and Sulfurization