Photorefractive p-i-n diode quantum well spatial light modulators

Lahiri, I.; Kwolek, K. M.; Nolte, David D.; Melloch, M. R.

doi:10.1063/1.114509

Cited by 48 publications

(12 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Electron lifetimes of several picoseconds were achieved in as-grown and weakly annealed materials, while retaining excellent quantum-confined Stark effects. The ability to achieve ultrafast lifetimes and sharp excitons in this class of materials has opened the door on a host of applications such as photorefractive nanostructures, 14,15 and has potential for low-dark current photodetectors, 16 electroabsorption modulators, 17 ultrafast striplines, 18 and electroabsorption sampling. 19 For a complete review, see Ref.…”

Section: A Semi-insulating Optoelectronic Quantum Wellsmentioning

confidence: 99%

Transient enhanced intermixing of arsenic-rich nonstoichiometric AlAs/GaAs quantum wells

et al. 1999

Self Cite

View full text Add to dashboard Cite

The superlattice intermixing of arsenic-rich nonstoichiometric AlAs/GaAs quantum wells grown at lowsubstrate temperatures around 300°C is enhanced by several orders of magnitude relative to diffusion in stoichiometric structures grown at ordinary substrate temperatures. The transient enhanced intermixing is attributed to a supersaturated concentration of group-III vacancies grown into the crystal by low-temperature growth conditions. The enhanced diffusion decays during moderate-temperature annealing between 600°C and 900°C for annealing times between 30 and 1000 s. First-order and second-order decay kinetics were both found to agree equally well with diffusion data obtained from isochronal and isothermal annealing. However, both of these kinetics require a thermally activated annihilation enthalpy to explain temperature-insensitive behavior observed in the time-dependent diffusion coefficient. The activation enthalpy H a for the decay is between 1.4 and 1.6 eV, which is compared with the migration enthalpy H m ϭ1.8 eV of the gallium vacancy in GaAs. For the strongest annealing, the diffusion length approaches the self-diffusion values observed in isotopic superlattices of stoichiometric GaAs.

show abstract

Section: A Semi-insulating Optoelectronic Quantum Wellsmentioning

confidence: 99%

Transient enhanced intermixing of arsenic-rich nonstoichiometric AlAs/GaAs quantum wells

et al. 1999

Self Cite

View full text Add to dashboard Cite

show abstract

“…14 The LT AlGaAs/GaAs multiple quantum wells ͑MQWs͒ grown at 310°C have been found to show ultrafast response while retaining sharp excitonic absorption, and proved to be attractive candidates for photorefractive applications. [15][16][17][18] In this letter, we report PL study of LT AlGaAs/GaAs MQWs with annealing, and make comparison with the results of the normal-temperature grown and proton implanted AlGaAs/GaAs MQWs. The PL intensity is found to be very sensitive to the anneal-induced changes in the defect densities.…”

mentioning

confidence: 99%

Effect of thermal annealing on optical emission properties of low-temperature grown AlGaAs/GaAs multiple quantum wells

Feng

Chen

Wang

et al. 1996

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] In particular PR multiple QWs enable much shorter times to write or erase a grating compared to bulk PR materials and they show strong Franz-Keldysh 3,4,10,13,17,18 and quantum confined Stark effect ͑QCSE͒ 11,12,[14][15][16]19 when transverse or longitudinal external fields are applied with respect to the QW growth direction. Because of their high sensitivity and fast response two dimensional optical imaging devices 20 as well as other applications, e.g., femtosecond pulse shaping, 21 laser based ultrasound detection 22 and three-dimensional depth resolved holographic imaging 23 have been demonstrated recently.…”

Section: Introductionmentioning

confidence: 99%

Spectral and thermal dependence of phase coherent photorefractivity in ZnSe quantum wells

et al. 2006

View full text Add to dashboard Cite

We investigate the spectral and thermal dependence of an exciton resonant all-optical and phase coherent photorefractive effect in a ZnSe single quantum well by four-wave mixing using 90 fs pulses. The observed phase coherence is attributed to an exciton-induced formation of an electron grating within the quantum well. The diffracted signal exhibits an exponential decay that is equal to the exciton dephasing rate and it shows a pronounced suppression at the temporal overlap of incident pulses. With decreasing photon energy the diffracted signal traces reveal faster decay and the exciton transition is shifted towards lower energies indicating an increasing electron concentration within the quantum well. In temperature dependent measurements we observe a filling of the signal dip at pulse overlap and a transition from the photorefractive effect to a ͑3͒ four-wave-mixing process below 35 K. Additional experiments using a cw pump laser are consistent with the proposed mechanism of the observed photorefractive effect. The phase coherent photorefractive signal is reproduced by a phenomenological model that is based on the optical Bloch equations for a five-level system.

show abstract

Photorefractive p-i-n diode quantum well spatial light modulators

Abstract: Articles you may be interested inAnalytical modeling of the resolution of photorefractive multiple quantum well spatial light modulators

Cited by 48 publications

References 10 publications

Transient enhanced intermixing of arsenic-rich nonstoichiometric AlAs/GaAs quantum wells

Transient enhanced intermixing of arsenic-rich nonstoichiometric AlAs/GaAs quantum wells

Effect of thermal annealing on optical emission properties of low-temperature grown AlGaAs/GaAs multiple quantum wells

Spectral and thermal dependence of phase coherent photorefractivity in ZnSe quantum wells

Contact Info

Product

Resources

About