Effect of thermal annealing on optical emission properties of low-temperature grown AlGaAs/GaAs multiple quantum wells

Feng, Wei; Chen, F.; Wang, W. X.; Yu, Yeon–Tae; Huang, Qi; Zhou, Jiannan

doi:10.1063/1.117229

Cited by 8 publications

(2 citation statements)

References 23 publications

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“…These behaviors of the SLT-grown InGaAs/GaAs MQW samples are similar to those observed for LT-grown AlGaAs/GaAs MQW samples by Feng et al 23) In their study, an Al 0:3 Ga 0:7 As/GaAs MQW sample was grown at 310 C with BEP ¼ 10 and was subjected to RTA at 500 -900 C. The authors reported a marked improvement in PL intensity as well as considerably larger shifts in energy due to the RTA than the sample grown at 580 C. The large energy shifts were attributed to strong Al-Ga interdiffusion. Anneal Temperature ( )…”

Section: Rta Resultssupporting

confidence: 86%

Effect of Rapid Thermal Annealing on Photoluminescence Properties of Low-Temperature Grown InGaAs/GaAs Multiple Quantum Wells

Kajikawa

Nishimoto

Fujioka

et al. 2006

jjap

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Samples having In0.12Ga0.88As/GaAs multiple quantum well (MQW) structures were grown by molecular-beam epitaxy at substrate temperatures ranging from a normal temperature of 550 °C to a low temperature of 250 °C. When the samples were grown with low As4/Ga beam equivalent pressure ratios of 5–6, photoluminescence (PL) was observed in spite of low growth temperatures of 250–300 °C. Furthermore, after rapid thermal annealing (RTA) at approximately 900 °C, the intensities of PL from the samples grown at 300 and 250 °C were improved so as to become comparable to that from the as-grown sample grown at 550 °C. At the same time, the RTA caused blue shifts in PL peak energy for these low-temperature grown samples. From the shifts in PL peak energy, the diffusion length of In–Ga interdiffusion was estimated to be approximately 4 nm for the 900 °C RTA and the activation energy was estimated to be 2.2 ±0.6 eV in these low-temperature grown samples.

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Section: Rta Resultssupporting

confidence: 86%

Effect of Rapid Thermal Annealing on Photoluminescence Properties of Low-Temperature Grown InGaAs/GaAs Multiple Quantum Wells

Kajikawa

Nishimoto

Fujioka

et al. 2006

jjap

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“…Some other annealing mechanism may be responsible for it. A similar relation is observed by Feng et al [33] in the annealing investigation of low-temperature grown AlGaAs/GaAs MQWs. In their studies, excess arsenic atoms aggregate to clusters upon thermal annealing, and then become large and the space between neighbouring clusters is increased, which increases the carrier lifetime and the PL intensity [34,35].…”

Section: Evolution Of Nanoscale As-rich and P-rich Clusters In The An...supporting

confidence: 88%

Luminescent properties of annealed and directly wafer-bonded InAsP/InGaAsP multiple quantum wells

Lao¹,

Wu²,

Huang³

2005

Semicond. Sci. Technol.

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InAsP/InGaAsP strain-compensated multiple quantum wells (SC-MQWs) were grown using gas source molecular beam epitaxy. The luminescent properties of the SC-MQWs after thermal annealing and direct wafer-bonding onto a GaAs substrate were studied. It is shown that photoluminescence (PL) intensities of the samples are improved by a factor of 4.1 upon annealing at 620 • C. The luminescence intensities of the samples bonded at 580 and 650 • C under ∼5 MPa pressure and 35 min annealing process are comparable with that of the as-grown ones. A proposed mechanism of defects annihilation relating to the evolution of nanoscale As-rich and P-rich clusters is then used to account for the dependence of PL intensities and the full width at half-maximum of InAsP/InGaAsP SC-MQWs on annealing temperatures.

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Electronic lifetime engineering using low-temperature GaAs in a quantum well structure

Stellmacher¹,

Berger²,

Sirtori³

et al. 1999

Journal of Crystal Growth

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Effect of thermal annealing on optical emission properties of low-temperature grown AlGaAs/GaAs multiple quantum wells

Cited by 8 publications

References 23 publications

Effect of Rapid Thermal Annealing on Photoluminescence Properties of Low-Temperature Grown InGaAs/GaAs Multiple Quantum Wells

Effect of Rapid Thermal Annealing on Photoluminescence Properties of Low-Temperature Grown InGaAs/GaAs Multiple Quantum Wells

Luminescent properties of annealed and directly wafer-bonded InAsP/InGaAsP multiple quantum wells

Electronic lifetime engineering using low-temperature GaAs in a quantum well structure

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