Luminescent properties of annealed and directly wafer-bonded InAsP/InGaAsP multiple quantum wells

Abstract

InAsP/InGaAsP strain-compensated multiple quantum wells (SC-MQWs) were grown using gas source molecular beam epitaxy. The luminescent properties of the SC-MQWs after thermal annealing and direct wafer-bonding onto a GaAs substrate were studied. It is shown that photoluminescence (PL) intensities of the samples are improved by a factor of 4.1 upon annealing at 620 • C. The luminescence intensities of the samples bonded at 580 and 650 • C under ∼5 MPa pressure and 35 min annealing process are comparable with that of the as-grown ones. A proposed mechanism of defects annihilation relating to the evolution of nanoscale As-rich and P-rich clusters is then used to account for the dependence of PL intensities and the full width at half-maximum of InAsP/InGaAsP SC-MQWs on annealing temperatures.

Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation

“…In the first, Zn enhances the monolayer variations in the QW thicknesses. Minor spatial variation in QW thickness is frequently observed during RTA and quantum well disordering [24]. In the second, Zn incorporation in the QWs causes intraband carrier scattering, and leads to homogenous broadening.…”