InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Lao, Yan-Feng; Cao, Chunfang; Wu, Honghui; Cao, Meng; Gong, Qianhong

doi:10.1049/el:20093380

Cited by 11 publications

(11 citation statements)

References 11 publications

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“…At elevated tempe− ratures, T 0 is equal to 51 K (T amb = 310-325 K) and 29 K (T amb = 330-345 K). These results are very close to their experimental values [11] of 83 K, 46 K, and 28 K, res− pectively.…”

Section: Resultssupporting

confidence: 89%

“…1) is similar to that reported by Lao et al [11]. The concept of the strain compensated multi−quantum−well (SCMQW) has been utilized.…”

Section: The Structuresupporting

confidence: 80%

“…have been extracted from the experimental threshold values (U th = 2.5 V, I th = 0.55 mA) reported by Lao et al [11] for a very similar structure with 5−μm TJ. In the above Eq.…”

Section: Resultsmentioning

confidence: 99%

“…As an alternative option, strain−compensated InAsP quantum wells separated by the tensile−strain InGaAsP barriers can be used in a VCSEL structure [11]. Each of these solutions offers some advan− tages over its counterparts, but definitely low lasing thresh− olds and high maximum operating temperature of the latter may turn out to become the most important factor.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

Piskorski¹,

Sarzała²,

Nakwaski³

2011

Opto-Electronics Review

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Continuous-wave (CW) performance of modern 1.3-μm InAsP/InGaAsP multi-quantum-well (MQW) tunnel-junction vertical-cavity surface-emitting diode lasers (TJ-VCSELs) is investigated using our comprehensive self-consistent simulation model to suggest their optimal design for room and elevated temperatures. For increasing ambient temperatures, an increase in the VCSEL threshold current has happened to be mostly associated with the Auger recombination. Nevertheless, the InAsP/InGaAsP VCSELs have been found to exhibit encouraging thermal behaviour with the quite high value of maximal operating temperature of 350 K. It has been found that 5-μm devices seem to be the most optimal ones because they demonstrate both the room temperature (RT) threshold current equal to only 0.55 mA and maximum operating temperature equal to as much as 345 K. For these devices, the characteristic temperature T0 is equal to 92 K for 290–305 K, 51 K for 310–325 K and 29 K for 330–345 K. Therefore, the InAsP/InGaAsP VCSELs have been found to offer very promising performance both at room and elevated temperatures as sources of the carrier 1.3-μm wave in the fibre optical communication using silica fibres.

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Section: Resultssupporting

confidence: 89%

“…1) is similar to that reported by Lao et al [11]. The concept of the strain compensated multi−quantum−well (SCMQW) has been utilized.…”

Section: The Structuresupporting

confidence: 80%

“…have been extracted from the experimental threshold values (U th = 2.5 V, I th = 0.55 mA) reported by Lao et al [11] for a very similar structure with 5−μm TJ. In the above Eq.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

Piskorski¹,

Sarzała²,

Nakwaski³

2011

Opto-Electronics Review

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“…However, it is difficult to grow the high quality distributed Bragg reflectors (DBRs), which are needed for VCSELs, based on InP, and complex approaches, such as wafer-bonding, are required. 2 Since DBRs at this wavelength are relatively easily grown on GaAs using GaAs/Al(GaAs) layer pairs, considerable effort has also been devoted to the development of GaAs-based active regions which emit near 1.3 lm. Examples include highly strained InGaAs, 3 InAs quantum dots, 4 and GaInNAs-based quantum wells (QWs) all of which have been the subject of extensive research.…”

Section: Introductionmentioning

confidence: 99%

Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements

Blume

Hild

Marko

et al. 2012

Journal of Applied Physics

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Articles you may be interested inDetecting and tuning anisotropic mode splitting induced by birefringence in an InGaAs/GaAs/AlGaAs verticalcavity surface-emitting laser J. Appl. Phys. 111, 043109 (2012) We present a combination of spectroscopy and device measurements on GaAsSb/GaAs vertical-cavity surface-emitting laser (VCSEL) structures to determine the temperature at which the wavelength of the VCSEL cavity mode (CM) aligns with that of the quantum well (QW) ground-state transition (GST), and therefore the gain peak. We find that, despite the achievement of room temperature (RT) continuous wave lasing in VCSEL devices, the QW transition and the CM are actually slightly misaligned at this temperature; room temperature electroluminescence measurements from a cleaved edge of the VCSEL wafer indicate that the 300 K QW GST energy is at 0.975 6 0.005 eV, while the CM measured in the VCSEL surface reflectivity spectra is at 0.9805 6 0.0002 eV. When the wafer sample is cooled, the CM and QW GST can be brought into alignment at 270 6 10 K, as confirmed by temperature-dependent electro-modulated reflectance (ER) and edge-electroluminescence spectroscopic studies. This alignment temperature is further confirmed by comparing the temperature dependence of the emission energy of a fabricated VCSEL device with that of an edge-emitting laser structure with a nominally identical active region. The study suggests that for further device improvement, the room temperature CM and QW GST energies should be more closely matched and both designed to a smaller energy of about 0.95 eV, somewhat closer to the 1.31 lm target. The study amply demonstrates the usefulness of non-destructive ER characterisation techniques in VCSEL manufacturing with GaAsSb-based QWs. V C 2012 American Institute of Physics.[http://dx

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Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical-Cavity Surface-Emitting Lasers

Liu

2021

Lecture Notes in Electrical Engineering

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InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Cited by 11 publications

References 11 publications

Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements

Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical-Cavity Surface-Emitting Lasers

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