Advanced Photonics Congress 2012
DOI: 10.1364/iprsn.2012.im4a.2
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Photonic Integration in State-of-the-Art Silicon Electronics Processes

Abstract: Photonic integration within state-of-the-art CMOS and DRAM processes leverages the existing electronic manufacturing infrastructure to minimize cost. Suitable design techniques combined with in-foundry optimization or post-processing have enabled integration within several advanced technologies.

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Cited by 3 publications
(4 citation statements)
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References 13 publications
(22 reference statements)
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“…3a and Extended Data Fig. 5), we selected two available Si MRMs realized in an electronic-photonic co-integration platform 63 . Si MRM device 1 (black curves) has a Q factor of 18,800 and 13.6 GHz FWHM 42 .…”
Section: Temperature Sensitivity Measurementsmentioning
confidence: 99%
“…3a and Extended Data Fig. 5), we selected two available Si MRMs realized in an electronic-photonic co-integration platform 63 . Si MRM device 1 (black curves) has a Q factor of 18,800 and 13.6 GHz FWHM 42 .…”
Section: Temperature Sensitivity Measurementsmentioning
confidence: 99%
“…Concerning electronic-photonic design, Mentor Graphics [25] recently announced a collaboration with the photonic design and simulation companies PhoeniX Software and Lumerical Solutions [26]. Finally, Cadence ® has been utilised for designing photonic components by Luxtera, and has been utilised in our group since 2006 [27,28], however post-layout layer generation, automatic Manhattan discretisation, automatic DRC cleaning and photonic auto-routing had not been implemented.…”
Section: Photonic Design Tools State-of-the-artmentioning
confidence: 99%
“…The channel spacing was set to 124 GHz with a 2 THz (16 nm) free spectral range. In interconnect applications, all wavelengths on a given waveguide are transmitted or received at a single location for all channels and travelling the same optical paths, so crosstalk requirements between channels is less restricted than in other telecommunications applications, being 20 dB a general accepted value [21]. Most of the second order filter bank designs based on SOI used radius of 7 μm in the manufactured devices and with projections to reduce those values to 3-4 μm.…”
Section: Circuit Designmentioning
confidence: 99%
“…Through port RR>-40 dB is obtained in all cases. These designs meet the target from medium to high bandwidth scenarios [21], [5], scaling up to 42 channels or 525 Gb/s with less post-fabrication trimming than current second-order filter designs, as it will be discussed in the next section. There is margin in the design values for accommodating 10% tolerances on coupling coefficients depending on the number of channels set.…”
Section: Circuit Designmentioning
confidence: 99%