Photonic Generation of Frequency-Multiplied Microwave Signals With Constant Amplitudes

Zi, Yuejiao; Jiang, Yang; Zhang, Xiaoyu; Dong, Ruyang; Luo, Hao; Xia, Yi; He, Yutong; Tian, Jing; Han, Bo

doi:10.1109/lpt.2018.2844815

Cited by 3 publications

(2 citation statements)

References 22 publications

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“…Zacharias [32] abandoned the use of high-bandwidth devices to reduce system costs, and injected-locked low-cost Fabry-Perot laser diode (FPLD) output and DFB laser output beat frequency to generate 60 GHz QAM modulation signal. Zi [33] used DFB laser as the modulation device of active filter, combined with optical injection locking technology to solve the problem of unstable amplitude of the generated signal. In the case of 10kHz frequency offset, the phase noise can be reduced to below -92dBc/Hz.…”

Section: Optical Heterodynementioning

confidence: 99%

Research progress of optical millimeter wave generation technology in RoF system

Guo¹,

Yang²,

Song³

et al. 2023

International Conference on Optoelectronic Information and Functional Materials (OIFM 2023)

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Section: Optical Heterodynementioning

confidence: 99%

Research progress of optical millimeter wave generation technology in RoF system

Guo¹,

Yang²,

Song³

et al. 2023

International Conference on Optoelectronic Information and Functional Materials (OIFM 2023)

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“…Incorporation of optical injection locking in tandem with the heterodyne approach for dual-wavelength generation in 1310 nm and 1550 nm range [14], on distributed feedback lasers (DFB), distributed Bragg's reflector (DBR) [15] and vertical cavity surface emitting lasers (VCSEL) [16] have been reported in the literature. Moreover, a new class of InAs/InP quantum dot [14] and quantum dash [17] diode laser has also been engaged in millimeter (MMW) and THz applications. A notable discrete frequency difference tunability of 1.0 up to 2.9 THz have been demonstrated from this novel active region based laser diodes compared to quantum-well laser counterparts [18].…”

Section: Introductionmentioning

confidence: 99%

Tunable Dual-Wavelength Self-injection Locked InGaN/GaN Green Laser Diode

Shamim

Alkhazragi

et al. 2019

IEEE Access

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We implemented a tunable dual-longitudinal-mode spacing InGaN/GaN green (521-528 nm) laser diode by employing a self-injection locking scheme that is based on an external cavity configuration and utilizing either a high or partial-reflecting mirror. A tunable longitudinal-mode spacing of 0.20 -5.96 nm was accomplished, corresponding to a calculated frequency difference of 0.22-6.51 THz, as a result. The influence of operating current and temperature on the system performance was also investigated with a measured maximum side-mode-suppression ratio of 30.4 dB and minimum dual-mode peak optical power ratio of 0.03 dB. To shed light on the operation of the dual-wavelength device arising from the tunable longitudinal-mode spacing mechanism, the underlying physics is qualitatively described. To the best of our knowledge, this tunable longitudinal-mode-spacing dual-wavelength device is novel, and has potential applications as an alternative means in millimeter wave and THz generation, thus possibly addressing the terahertz technology gap. The dual-wavelength operation is also attractive for high-resolution imaging and broadband wireless communication.

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Microwave signal generation from a parity-time-symmetric optoelectronic oscillator with optical injection locking

Jiao¹,

Zuo²,

Li³

et al. 2022

Appl. Opt.

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A parity-time (PT) symmetric optoelectronic oscillator (OEO) with optical injection locking is proposed and experimentally demonstrated to generate single-mode microwave signals. A distributed feedback laser is injection locked, which functions as a frequency multiplier for the coarse mode selection of the PT-symmetric OEO. The PT symmetry in the OEO is implemented by using a polarization-dependent Sagnac loop to form two identical loops for coupling. By tuning the two polarization controllers in the Sagnac loop, the gain/loss and coupling coefficient of the two loops can be controlled, and single-mode oscillation in the OEO could be achieved at the broken PT-symmetry condition. Microwave signal generation at the frequency of 6.427 GHz is obtained from the proposed OEO. The phase noise is about −105 dBc/Hz at an offset frequency of 10 kHz.

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Photonic Generation of Frequency-Multiplied Microwave Signals With Constant Amplitudes

Cited by 3 publications

References 22 publications

Research progress of optical millimeter wave generation technology in RoF system

Research progress of optical millimeter wave generation technology in RoF system

Tunable Dual-Wavelength Self-injection Locked InGaN/GaN Green Laser Diode

Microwave signal generation from a parity-time-symmetric optoelectronic oscillator with optical injection locking

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