Photonic Crystal Structures Based on GaN Ultrathin Membranes

Volciuc, O.; Sergentu, V. V.; Tiginyanu, I. M.; Schowalter, Marco; Ursaki, V. V.; Rosenauer, A.; Hommel, D.; Gutowski, J.

doi:10.1166/jno.2014.1586

Cited by 6 publications

(8 citation statements)

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“…Suspended ~15-nm thick GaN membranes nanoperforated in an ordered fashion have been fabricated using direct writing of negative charges by a focused ion beam and subsequent photoelectrochemical etching of GaN free-standing templates [295]. It was shown that the nanoperforated GaN membranes exhibiting a triangular lattice arrangement of holes with a diameter of 150 nm represent an intermediate case between 2D and 3D photonic crystals.…”

Section: Photonic Engineering: Waveguides and Bragg Reflectorsmentioning

confidence: 99%

Porous semiconductor compounds

Monaico

Tiginyanu

Ursaki

2020

Semicond. Sci. Technol.

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In this review paper, we present a comparative analysis of the electrochemical dissolution of III-V (InP, GaAs, GaN), II-VI (ZnSe, CdSe) and SiC semiconductor compounds. The resulting morphologies are discussed, including those of porous layers and networks of low-dimensional structures such as nanowires, nanobelts, and nanomembranes. Self-organized phenomena in anodic etching are disclosed, leading to the formation of controlled porous patterns and quasi-ordered distribution of pores. Results of templated electrochemical deposition of metal nanowires, nanotubes and nanodots are summarized. Porosification of some compounds is shown to improve luminescence characteristics as well as to enhance photoconductivity, second harmonic generation and Terahertz emission. Possible applications of porous semiconductor compounds in various areas are discussed.

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Section: Photonic Engineering: Waveguides and Bragg Reflectorsmentioning

confidence: 99%

Porous semiconductor compounds

Monaico

Tiginyanu

Ursaki

2020

Semicond. Sci. Technol.

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“…The GaN memristive device reported in this paper was fabricated using a modified version of the surface charge lithography (SCL) that is well described in [11][12][13][14] and will not be repeated here in detail. We note that the SCL is based on ion-beam-writing of surface negative charge followed by photoelectrochemical (PEC) etching of the GaN layer.…”

Section: Fabrication Of Gan Membranesmentioning

confidence: 99%

“…In Ref. [14] it is shown that the diffraction pattern of GaN membranes as those used in this paper displays a wurtzite crystalline structure. A further structural characterization was performed by High-Angular Dark Field Scanning Transmission Electron Microscopy (HAADF-STEM) using a FEI Titan 80/300 instrument equipped with a corrector for spherical aberration of objective lenses and a Fishione model HADF detector.…”

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confidence: 91%

Memristive GaN ultrathin suspended membrane array

et al. 2016

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We show that ultrathin GaN membranes, with a thickness of 15 nm and planar dimensions of 12 184 m 2 , act as memristive devices. The memristive behavior is due to the migration of the negatively-charged deep traps, which form in the volume of the membrane during the fabrication process, towards the unoccupied surface states of the suspended membranes. The time constant of the migration process is of the order of tens of seconds and varies with the current or voltage sweep.

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“…The GaN ultrathin membranes resemble the surface of the water in a lake under windy conditions. Nanoperforated membranes with an ordered and controlled design written by a focused gallium ion beam with energy variable in the range of 5 to 30 keV provided by an FEI Nova Nanolab 200 dual beam system were prepared on free standing n -type GaN templates grown by hydride vapor phase epitaxy (HVPE) [73]. A beam current of 1 pA was used to create a bitmap with an exposure dose amounting to 2.…”

Section: Surface Charge Lithography (Scl)mentioning

confidence: 99%

GaN nanostructuring for the fabrication of thin membranes and emerging applications

Tiginyanu¹,

Ursaki²

2014

Turk J Phys

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Abstract:We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional methods of wet etching undercutting for membrane manufacturing, technologies applied for the fabrication of photonic crystal structures based on GaN nanomembranes, double side processing, and surface charge lithography. Prospects of membrane applications in photonic devices, sensors, and microoptoelectromechanical and nanoelectromechanical systems are discussed, taking into account the advantageous piezoelectric, optical, and mechanical properties of GaN and related III-V nitride materials.

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Photonic Crystal Structures Based on GaN Ultrathin Membranes

Cited by 6 publications

References 1 publication

Porous semiconductor compounds

Porous semiconductor compounds

Memristive GaN ultrathin suspended membrane array

GaN nanostructuring for the fabrication of thin membranes and emerging applications

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