Photon-Induced Oxygen Loss in Thin Si<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Films

Fiori, C.; Devine, R. A. B.

doi:10.1103/physrevlett.52.2081

Cited by 85 publications

(25 citation statements)

References 17 publications

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“…[6,9,24] Furthermore, it should also work well with mask techniques used in the semiconductor industry. Considering the relatively low electron doses required (and the possibility that UV light might do the job just as well) [25] in combination with higher precursor gas pressures, one might even envisage industrial applications, where the actual size of the deposits can be controlled by the precursor dosage. Provided that it is indeed the proposed Knotek-Feibelman mechanism [18] which mostly accounts for the local activation, the present size limitations in electron-beam lithography that arise from effects triggered by secondary low energy electrons might, at least partly, also be overcome.…”

mentioning

confidence: 99%

Electrons as “Invisible Ink”: Fabrication of Nanostructures by Local Electron Beam Induced Activation of SiO_x

et al. 2010

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confidence: 99%

Electrons as “Invisible Ink”: Fabrication of Nanostructures by Local Electron Beam Induced Activation of SiO_x

et al. 2010

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“…1 Oxide degradation observed by AES is exhibited both in the reduction of the O KLL signal and in the complementary growth of elemental-like Si LVV and Si KLL peaks. The changes in the Si peaks remain somewhat controversial because they have been variously attributed to the growth of Si microcrystals, 2 dangling Si bonds 3,4 and oxygen-deficient centers. 5 The onset for electron beam damage of ion-cleaned, thermally grown oxide has been observed at doses of <1 C cm 2 .…”

Section: Introductionmentioning

confidence: 99%

Artifacts in AES microanalysis for semiconductor applications

King

2000

Surf. Interface Anal.

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Auger electron spectroscopy analyses of submicron features on semiconductor surfaces are routinely accompanied by analytical artifacts such as sample degradation and background contributions arising from electron beam scattering. Submicron analyses are commonly carried out at electron beam densities in excess of 1 A cm −2 and are especially damaging to silicon oxides. The evolution of oxide reduction is observed both as a loss of oxygen versus beam exposure and in a complementary growth of Si LVV and Si KLL elemental peaks. The O KLL signal intensity from a 1 µm 2 area of thermally grown oxide is found to decrease by 22% after exposure to a rastered 20 kV/10 nA beam for 10 min. Another aspect of submicron analysis is the contribution to survey spectra that originates when surrounding material is excited by backscattered electrons. Background contributions may dominate AES spectra even when the sample is flat and the probing beam is smaller than the feature of interest. Tungsten damascene contacts provide a useful platform for investigating this phenomenon in the absence of topography. Spectra have been collected from tungsten contacts of various sizes and the target and background contributions quantified. When a 0.25 µm diameter tungsten contact is probed with a narrow 20 kV beam, the W MNN signal intensity is determined to be only 70% of that emitted from a large tungsten structure. Target signal reduction coincides with increased signal contributions from the surrounding oxide.

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“…As a result of oxygen desorption the surface was rich in Si and the remaining structure was probably an oxygen deficient SiO x (0<x<2). The mechanism of desorption of oxygen from SiO 2 is beyond the scope of this chapter and the readers are referred to the literature cited for further reading (Carriere and Lang, 1977;Knotek and Feibelman, 1978;Thomas, 1974;Fiori and Devine, 1984). It is most likely that the oxygen deficient SiO x was non-luminescent and it therefore contributed to the CL intensity degradation (Ntwaeaborwa et al, 2006(Ntwaeaborwa et al, , 2007.…”

Section: Cathodoluminescence: Properties and Intensity Degradationmentioning

confidence: 99%

Cathodoluminescence Properties of SiO2: Ce3+,Tb3+, SiO2:Ce3+, Pr3+ and SiO2: PbS

Ntwaeaborwa¹,

Mhlongo²,

Pitale³

et al. 2012

Cathodoluminescence

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Photon-Induced Oxygen Loss in Thin SiO2Films

Cited by 85 publications

References 17 publications

Electrons as “Invisible Ink”: Fabrication of Nanostructures by Local Electron Beam Induced Activation of SiO_x

Electrons as “Invisible Ink”: Fabrication of Nanostructures by Local Electron Beam Induced Activation of SiO_x

Artifacts in AES microanalysis for semiconductor applications

Cathodoluminescence Properties of SiO2: Ce3+,Tb3+, SiO2:Ce3+, Pr3+ and SiO2: PbS

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Photon-Induced Oxygen Loss in Thin SiO2Films

Cited by 85 publications

References 17 publications

Electrons as “Invisible Ink”: Fabrication of Nanostructures by Local Electron Beam Induced Activation of SiOx

Electrons as “Invisible Ink”: Fabrication of Nanostructures by Local Electron Beam Induced Activation of SiOx

Artifacts in AES microanalysis for semiconductor applications

Cathodoluminescence Properties of SiO2: Ce3+,Tb3+, SiO2:Ce3+, Pr3+ and SiO2: PbS

Contact Info

Product

Resources

About

Electrons as “Invisible Ink”: Fabrication of Nanostructures by Local Electron Beam Induced Activation of SiO_x

Electrons as “Invisible Ink”: Fabrication of Nanostructures by Local Electron Beam Induced Activation of SiO_x