Abstract:Recently, a new attenuating phase shift film utilizing a bilayer of SiON film and TaHf alloy film was developed for F 2 and high transmission ArF lithography. Basic data, showing their optical properties, chemical durability, and dry-etch performance was introduced during the Photomask Japan 2003. Currently a lot of lithographers are paying their attention on this new material, because of its capability for high transmission ArF, as one of the solution for 65nm node with 193nm extension.As it is becoming more … Show more
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