Photomask linewidth comparison by PTB and NIST

Bergmann, Detlef; Bodermann, Bernd; Bosse, Harald; Buhr, E.; Dai, Gaoliang; Dixson, Ronald G.; Häßler-Grohne, Wolfgang; Hahm, Kai; Wurm, Matthias

doi:10.1117/12.2199453

Cited by 3 publications

(8 citation statements)

References 14 publications

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“…Despite the non-negligible differences observed, this level of agreement was quite promising because two methods involved in the comparison were based on completely different physical principles with different traceability pathways. Additionally, PTB and NIST have performed a bilateral comparison of linewidth measurements on a CoG photomask [23]. On the isolated opaque features, we found agreement of the CD measurements at the 3 nm to 5 nm level on most features.…”

Section: Introductionsupporting

confidence: 55%

“…The average offset was −0.76 nm. This is significantly smaller than some of the 3 nm-5 nm level offsets previously observed on more challenging photomask features [23]. For this comparison, all of the E n -values are less than 1.…”

Section: Measurement Resultsmentioning

confidence: 50%

“…In the field of nanometrology, performing large scale comparisons of linewidth measurements among NMIs has been especially challenging due to the use of multiple measurement technologies for relevant applications and the need to carefully define and thoroughly specify the measurand. NIST and PTB recently undertook a comparison of CD-AFM linewidth measurements on a photomask standard [23]. The observed differences between the laboratories were about 3 nm-5 nm for some features.…”

Section: Discussionmentioning

confidence: 99%

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Comparison of line width calibration using critical dimension atomic force microscopes between PTB and NIST

Dai

Hahm

Bosse

et al. 2017

Meas. Sci. Technol.

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International comparisons between National Metrology Institutes are important to verify measurement results and the associated uncertainties. In this paper, we report a comparison of the line width calibration of a crystalline silicon line width standard, referred to as IVPS100-PTB standard, between the Physikalisch-Technische Bundesanstalt in Germany and the National Institute of Standards and Technology in the United States. Critical dimension atomic force microscopy was the measurement method used for this comparison. Both institutes applied generally the same but independently developed traceability pathways: the scaling factor of the atomic force microscope (AFM) scanner was calibrated by a set of step height and lateral standards certified by metrological AFMs, while the effective tip width was ultimately traceable to the lattice parameter of silicon via high resolution transmission electron microscopy. Good agreement has been achieved in the comparison: For two groups of line features with nominal critical dimensions (CDs) of 50 nm, 70 nm, 90 nm, 110 nm and 130 nm that were compared, the observed deviations of CD results were between −1.5 nm and 0.3 nm. The deviations are well within the associated measurement uncertainty.

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Section: Introductionsupporting

confidence: 55%

Section: Measurement Resultsmentioning

confidence: 50%

Section: Discussionmentioning

confidence: 99%

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Comparison of line width calibration using critical dimension atomic force microscopes between PTB and NIST

Dai

Hahm

Bosse

et al. 2017

Meas. Sci. Technol.

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“…A photomask is investigated in this section whose features were already well characterized, so that the sample's geometrical and optical properties are known and well documented [6]. Likewise, previously obtained linewidth measurement results are available for comparison.…”

Section: Application For a Chrome On Glas Samplementioning

confidence: 99%

“…There is another CMC entry for CD calibrations from PTB, employing a scanning electron microscopy (SEM). At PTB the linewidth measurements of SEM, AFM and optical microscopy are frequently compared [6].…”

Section: Introduction and Application Of A New Approach For Model-bas...mentioning

confidence: 99%

Introduction and application of a new approach for model-based optical bidirectional measurements

Krüger,

Manley,

Bergmann

et al. 2024

Meas. Sci. Technol.

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Accurate measurements of micro- and nanoscale features in optical microscopy demand comprehensive modelling approaches. In this study, we introduce an enhanced evaluation method, utilizing rigorous simulations based on a finite element method (FEM) algorithm within an advanced Bayesian optimization framework. We provide an in-depth explanation of the measurement process, including the dimension reduction techniques applied to the acquired measurement data. Additionally, we employ Hopkins' approximation or also referred to as local Hopkins' methods for an efficient microscopic image simulation, resulting in a significant reduction of the computing time.We applied this method to measure the linewidths of six different chrome lines, nominally 300 nm to 1000 nm wide, on a glass substrate. Our results show an excellent agreement with previous investigations conducted using various measurement systems, including atomic force microscopy (AFM), scanning electron microscopy (SEM), and optical microscopy in combination with different measurement evaluation techniques.

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Calibration of high magnification in the measurement of critical dimension by AFM and SEM

Kwak

Chang

Na³

et al. 2021

Applied Surface Science

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Photomask linewidth comparison by PTB and NIST

Cited by 3 publications

References 14 publications

Comparison of line width calibration using critical dimension atomic force microscopes between PTB and NIST

Comparison of line width calibration using critical dimension atomic force microscopes between PTB and NIST

Introduction and application of a new approach for model-based optical bidirectional measurements

Calibration of high magnification in the measurement of critical dimension by AFM and SEM

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