Photoluminescence wavelength variation of monolayer MoS2 by oxygen plasma treatment

Kim, Min Su; Nam, Giwoong; Park, Seki; Kim, Hyun; Han, Gang; Lee, Jubok; Dhakal, Krishna P.; Leem, Jae‐Young; Lee, Young Hee; Kim, Jeongyong

doi:10.1016/j.tsf.2015.06.024

Cited by 27 publications

(23 citation statements)

References 30 publications

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“…It has recently been demonstrated that electron doping enhances the formation of negative trions in monolayer MoS 2 , thereby, resulting in red‐shift of characteristic peaks . In this regard, the frequency of characteristic peaks is similar to freestanding ones, indicating that n‐type doping effect can be ruled out . This result is consistent with previous Raman results on a decreased n‐type doping level.…”

Section: Resultssupporting

confidence: 90%

Chemical vapor deposition growth and characterization of drop-like MoS₂/MoO₂granular films

Hao

Yang

Gao

2016

Phys. Status Solidi B

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Monolayer MoS2 is an emerging two‐dimensional semiconductor with wide‐ranging potential applications in novel optoelectronic devices and catalysis. Here, we report the growth of drop‐like monolayer MoS2/MoO2 granular films on SiO2/Si substrate by chemical vapor deposition method. The as‐synthesized films were systematically characterized by various means of optical microscopy, X‐ray/ultraviolet photoemission spectroscopy, scanning electron microscopy, atomic/kelvin force microscopy, X‐ray diffraction, Raman and photoluminescence techniques. The combined results of atomic force microscopy and scanning electron microscopy clearly present novel drop‐like granulars and domain boundaries, ascribed to lower growth temperature. X‐ray photoemission spectroscopy results complemented by Raman and X‐ray diffraction results confirm the formation of MoS2/MoO2 granular films. The ultraviolet photoemission spectroscopy, along with kelvin force microscopy, reveals a different nature of surface potential of drop‐like MoS2 granular films compared with crystalline MoS2, owing to electron transfer from MoS2 to MoO2 and drop‐like structure. Our study broadens the scope of two‐dimensional transition metal dichalcogenides research and reveals the distinct physical properties of drop‐like monolayer MoS2 granular films.

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Section: Resultssupporting

confidence: 90%

Chemical vapor deposition growth and characterization of drop-like MoS₂/MoO₂granular films

Hao

Yang

Gao

2016

Phys. Status Solidi B

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“…Recently, plasma‐assisted doping techniques have emerged as new doping techniques on TMD materials such as MoS 2 and WSe 2 for tuning novel nanoelectronics, optoelectronics, or biosensing devices with significantly enhanced functionalities. In these plasma doping techniques, the top surfaces of MoS 2 are treated with energetic plasmas generated in a reactive ion etcher (RIE) with O 2 , SF 6 , CHF 3 , CF 4 , or Ar . These reactive species in plasma can be effective dopants for 2D materials.…”

Section: Doping Strategiesmentioning

confidence: 99%

“…Therefore, the MoS 2 device properties such as resistance and on‐current fabricated with the oxygen plasma doping can be tuned to 10 4 times by changing the plasma exposure time. Kim et al used O 2 plasma doping of 1L‐MoS 2 to enhance PL emission and absorption and they observed red shifts of ≈20 nm in PL peaks by the O 2 plasma doping caused by the defect states formed by the O 2 plasma …”

Section: Doping Strategiesmentioning

confidence: 99%

“…The plasma‐treated MoS 2 devices exhibited improved device properties due to the plasma induced doping effect on the MoS 2 surface. In addition, O 2 plasma doping enhanced and altered the properties of 1L‐MoS 2 by creating and manipulating defects on the MoS 2 surface, enhancing, or quenching PL, or tailoring the electrical properties of 1L‐MoS 2 . More details on these studies will be presented in the application section.…”

Section: Doping Strategiesmentioning

confidence: 99%

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Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects

2016

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Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS ) have recently attracted much attention due to their nonzero-gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS -based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS thin layers, and the progress made so far for their doping-based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped-MoS in industry, as a guide for 2D material community, are also provided.

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“…However, the effect of N Ã 2 -and Ga-irradiation on the 2D layered-MoS 2 in high to ultra-high vacuum (UHV) environment has not been explored. Focusing on MoS 2 , the tunability of doping, [13][14][15][16][17] optical, [18][19][20] and structural, 21 properties of the layered-MoS 2 has been reported by employing the plasma (O Ã 2 or N Ã 2 ) irradiation. However, in most of these studies, $150 Torr of the background utilized during plasma irradiation, whereas in plasma-assisted MBE (PAMBE), low background $10 À6 Torr can be used for tuning the properties of layered-MoS 2 .…”

Section: Impact Of N-plasma and Ga-irradiation On Mos 2 Layer In Molementioning

confidence: 99%

Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy

Mishra

Tangi

et al. 2017

Applied Physics Letters

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Recent interest in two-dimensional materials has resulted in ultra-thin devices based on the transfer of transition metal dichalcogenides (TMDs) onto other TMDs or III-nitride materials. In this investigation, we realized p-type monolayer (ML) MoS2, and intrinsic GaN/p-type MoS2 heterojunction by the GaN overgrowth on ML-MoS2/c-sapphire using the plasma-assisted molecular beam epitaxy. A systematic nitrogen plasma (N2*) and gallium (Ga) irradiation studies are employed to understand the individual effect on the doping levels of ML-MoS2, which is evaluated by micro-Raman and high-resolution X-Ray photoelectron spectroscopy (HRXPS) measurements. With both methods, p-type doping was attained and was verified by softening and strengthening of characteristics phonon modes E2g1 and A1g from Raman spectroscopy. With adequate N2*-irradiation (3 min), respective shift of 1.79 cm−1 for A1g and 1.11 cm−1 for E2g1 are obtained while short term Ga-irradiated (30 s) exhibits the shift of 1.51 cm−1 for A1g and 0.93 cm−1 for E2g1. Moreover, in HRXPS valence band spectra analysis, the position of valence band maximum measured with respect to the Fermi level is determined to evaluate the type of doping levels in ML-MoS2. The observed values of valance band maximum are reduced to 0.5, and 0.2 eV from the intrinsic value of ≈1.0 eV for N2*- and Ga-irradiated MoS2 layers, which confirms the p-type doping of ML-MoS2. Further p-type doping is verified by Hall effect measurements. Thus, by GaN overgrowth, we attained the building block of intrinsic GaN/p-type MoS2 heterojunction. Through this work, we have provided the platform for the realization of dissimilar heterostructure via monolithic approach.

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Photoluminescence wavelength variation of monolayer MoS2 by oxygen plasma treatment

Cited by 27 publications

References 30 publications

Chemical vapor deposition growth and characterization of drop-like MoS₂/MoO₂granular films

Chemical vapor deposition growth and characterization of drop-like MoS₂/MoO₂granular films

Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects

Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy

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Photoluminescence wavelength variation of monolayer MoS2 by oxygen plasma treatment

Cited by 27 publications

References 30 publications

Chemical vapor deposition growth and characterization of drop-like MoS2/MoO2granular films

Chemical vapor deposition growth and characterization of drop-like MoS2/MoO2granular films

Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects

Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy

Contact Info

Product

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Chemical vapor deposition growth and characterization of drop-like MoS₂/MoO₂granular films

Chemical vapor deposition growth and characterization of drop-like MoS₂/MoO₂granular films