Photoluminescence study of native defects in annealed GaAs

Chatterjee, P.K.; Vaidyanathan, K. V.; Durschlag, M.S.; Streetman, B. G.

doi:10.1016/0038-1098(75)90617-1

Cited by 44 publications

(11 citation statements)

References 11 publications

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“…Nevertheless a detailed comparison with our levels is not so easy. The b2 level (49 meV) for instance is observed in all TSC spectra with reproducible strength and is probably a structural defect; it can be compared with the 48 meV line reported by Chatterjee et al (1975) or Chang eta1 (1971) and attributed to the A, vacancy.…”

Section: Resultssupporting

confidence: 61%

Nonlinear absorption and spectral conversion of laser radiation by carbon monoxide molecules excited in an electron-beam-controlled discharge

Anan'ev¹,

Danilychev²,

Ионин³

et al. 1987

Sov. J. Quantum Electron.

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In a previous paper we showed that differential TSC spectroscopy enables us to discriminate easily between a monomolecular and a bimolecular recombination process. It was also deduced that it leads to a correct evaluation of the coefficient X = E,/kT, relating the activation energy E, and the temperature T, of the maximum (20 < X < 30). In the present work we examine the particular case of the TSC peaks lying at very low temperature (below 77 K): the temperature dependence of the thermal velocity and of the density of states in the band introduce an important correction leading to values of X that can be lower than 10. The corresponding activation energies are then much lower than the values deduced from the usual Urbach's law. The experimental case of semi-insulating GaAs is studied: four overlapping peaks are found in the range 10-50 K that could correspond to donors or acceptors impurities (10-50 meV). These low activation energies are confirmed by a fractional emptying experiment.

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Section: Resultssupporting

confidence: 61%

Nonlinear absorption and spectral conversion of laser radiation by carbon monoxide molecules excited in an electron-beam-controlled discharge

Anan'ev¹,

Danilychev²,

Ионин³

et al. 1987

Sov. J. Quantum Electron.

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“…The PL spectra taken below 100 K consist of the near band emission, conduction-band-to-Mn acceptor transitions and defect related luminescence. For example, intrinsic defects formed during the ion irradiation, like the optically active arsenic and gallium vacancies dominate the low temperature PL spectra [27,28]. The energy levels corresponding to those defects are located between 30 and 160 meV below the conduction band of GaAs and the low temperature PL emission peaks are located between 840 and 960 nm.…”

Section: A Optical Properties Of Mn Doped (Gamn)asmentioning

confidence: 99%

Band-gap narrowing in Mn-doped GaAs probed by room-temperature photoluminescence

et al. 2015

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The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key issue to understand the origin of ferromagnetism. Here we present room temperature photoluminescence and ellipsometry measurements of Ga 100%-x Mn x As alloy. The up-shift of the valence-band is proven by the red shift of the room temperature near band gap emission from the Ga 100%-x Mn x As alloy with increasing Mn content. It is shown that even a doping by 0.02 at.% of Mn affects the valenceband edge and it merges with the impurity band for a Mn concentration as low as 0.6 at.%. Both X-ray diffraction pattern and high resolution cross-sectional TEM images confirmed full recrystallization of the implanted layer and GaMnAs alloy formation.

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“…The LD sample also shows two lower-energy peaks that are red-shifted approximately 70 and 140 meV from the exciton emission peaks located at 1.47 and 1.40 eV, respectively, while the HD sample does not show these peaks in the CL spectra. Previous PL studies on single-crystalline GaAs materials have revealed an acceptor level C As defect relating to an ∼1.49 eV spectral peak and an acceptor Si As ∼1.48 eV with the main exciton peak at ∼1.51 eV, i.e., red-shifted 20–30 meV from the main exciton peak. − The additional peaks in the CL spectra for the LD sample are red-shifted 70 and 140 meV from the main exciton peak; therefore, the Si As and C As peaks do not explain these peaks. These peaks could exist, but the large fwhm of the main exciton peak due to the Si doping could mask 20–30 meV shifted peaks if they are weak.…”

Section: Results and Discussionmentioning

confidence: 94%

Directly Linking Low-Angle Grain Boundary Misorientation to Device Functionality for GaAs Grown on Flexible Metal Substrates

Poplawsky

Dutta

Guthrey

et al. 2020

ACS Appl. Mater. Interfaces

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A new growth method to make highly oriented GaAs thin films on flexible metal substrates has been developed, enabling roll-to-roll manufacturing of flexible semiconductor devices. The grains are oriented in the <001> direction with <1°m isorientations between them, and they have a comparable mobility to single-crystalline GaAs at high doping concentrations. At the moment, the role of low-angle grain boundaries (LAGBs) on device performance is unknown. A series of electron backscatter diffraction (EBSD) and cathodoluminesence (CL) studies reveal that increased doping concentrations decrease the grain size and increase the LAGB misorientation. Cross-sectional scanning transmission electron microscopy (STEM) reveals the complex dislocation structures within LAGBs. Most importantly, a correlative EBSD/electron beam-induced current (EBIC) experiment reveals that LAGBs are carrier recombination centers and that the magnitude of recombination is dependent on the degree of misorientation. The presented results directly link increased LAGB misorientation to degraded device performance, and therefore, strategies to reduce LAGB misorientations and densities would improve highly oriented semiconductor devices.

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Photoluminescence study of native defects in annealed GaAs

Cited by 44 publications

References 11 publications

Nonlinear absorption and spectral conversion of laser radiation by carbon monoxide molecules excited in an electron-beam-controlled discharge

Nonlinear absorption and spectral conversion of laser radiation by carbon monoxide molecules excited in an electron-beam-controlled discharge

Band-gap narrowing in Mn-doped GaAs probed by room-temperature photoluminescence

Directly Linking Low-Angle Grain Boundary Misorientation to Device Functionality for GaAs Grown on Flexible Metal Substrates

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