Photoluminescence study of deep levels in CuGaTe2 crystals

Krustok, J.; Raudoja, J.; Yakushev, М. V.; Pilkington, R.D.; Collan, H.

doi:10.1063/1.371517

Cited by 13 publications

(4 citation statements)

References 9 publications

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“…In the CuGaTe 2 (x ¼1) crystal, two distinct peaks are present at 1.39 and 0.95 eV. The deep level at 0.95 eV has also been observed by Krustok et al [26]. They suggested that the recombination causing the 0.95 eV band originates from the defects, which are segregated near the grain boundaries or dislocations.…”

Section: Photoluminescencesupporting

confidence: 63%

Study of polycrystalline bulk CuIn1–xGaxTe2

Aissaoui

Mehdaoui

Bechiri

et al. 2011

Journal of Luminescence

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Section: Photoluminescencesupporting

confidence: 63%

Study of polycrystalline bulk CuIn1–xGaxTe2

Aissaoui

Mehdaoui

Bechiri

et al. 2011

Journal of Luminescence

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“…It is well known that PL measurements provide a considerable amount of information about relatively shallow defect levels, but there have been several studies suggest that chalcopyrite structure compounds also contain very deep defect levels, 8,9) which can also be studied using PL spectroscopy. These deep PL bands were recently discovered and studied in CuInSe 2 , 10) CuGaSe 2 , 11) CuAlSe 2 , 12) CuGaTe 2 , 13) and Cu(In,Ga)Se 2 . 14) Therefore, many PL studies have also been performed to characterize CuInS 2 defects.…”

Section: Introductionmentioning

confidence: 76%

Photoluminescence Study of Deep Levels in CuInS₂ Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide

Liu

Dou

Sugiyama

2012

Jpn. J. Appl. Phys.

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Photoluminescence (PL) spectroscopy measurements are carried out to determine the deep defect levels of Cu-rich CuInS2 thin films prepared by sulfurization using ditertiarybutylsulfide [(t-C4H9)2S: DTBS]. Several PL emission peaks were detected at 1.07, 1.01, and 0.93 eV in Cu-rich CuInS2 thin films. These peaks are considered to be due to both donor–acceptor pair emission as well as transitions related to trap. On the basis of excitation power dependent and temperature dependent PL measurements, the defect levels are calculated. Copper interstitial (Cui) was determined to be the deep donor level, which is easier to create in samples prepared under Cu-rich conditions. A new trap level at 625 meV below the conduction band was found. Using these data and our previous study data, the intrinsic defects are easier to exist in what kind of CuInS2 thin films is analyzed, a complete defect levels diagram of CuInS2 thin films is also proposed.

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“…In contrast, the electronic transport properties of the ABTe 2 compounds are less affected by the detrimental bipolar effect due to their much larger bandgaps on the order of 1 eV. [34,[55][56][57][58][59] More interestingly, we in this work found that the pristine ABTe 2 (A = Cu, Ag; B = Ga, In) chalcopyrites exhibit intrinsic semiconductor to degenerate semiconductor transitions between 700 and 800 K, the origin of which is found to be related to the deep-level in-gap states induced by native A-site vacancies.…”

Section: Ztmentioning

confidence: 99%

Origin of the Distinct Thermoelectric Transport Properties of Chalcopyrite ABTe₂ (A = Cu, Ag; B = Ga, In)

Cao

Meng

et al. 2020

Adv Funct Materials

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Despite the same crystal structure and homologous constituent elements, the chalcopyrite compounds ABTe2 (A = Cu, Ag; B = Ga, In) exhibit distinct electronic and thermal transport properties. The aim of this work is to understand the origin of such discrepancy employing experiments and theoretical calculations. The results of Hall coefficient measurements, absorption spectroscopy, and electronic transport studies suggest the deep‐level in‐gap states induced by the native A‐site vacancies play a key role in the observed intrinsic semiconductor to degenerate semiconductor transition and are the origins of the distinct electrical conductivity among ABTe2 compounds. In addition, the cryogenic heat capacity measurements and calculated phonon dispersion relations show that the acoustic and low‐frequency optical modes of AgGaTe2 and AgInTe2 are governed by the vibrations of AgTe clusters while the counterparts of CuGaTe2 and CuInTe2 compounds are dominated by the vibrations of Te atoms, and the coupling between the acoustic and low‐frequency optical modes is notably different among ABTe2 compounds. Specifically, lower avoided‐crossing frequencies, lower sound velocity together with stronger Umklapp process yield lower thermal conductivities of AgGaTe2 and AgInTe2 than CuGaTe2 and CuInTe2. This work provides new insights into the understanding and improvement of electrical and thermal properties toward higher thermoelectric performance of chalcopyrite compounds.

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Photoluminescence study of deep levels in CuGaTe2 crystals

Cited by 13 publications

References 9 publications

Study of polycrystalline bulk CuIn1–xGaxTe2

Study of polycrystalline bulk CuIn1–xGaxTe2

Photoluminescence Study of Deep Levels in CuInS₂ Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide

Origin of the Distinct Thermoelectric Transport Properties of Chalcopyrite ABTe₂ (A = Cu, Ag; B = Ga, In)

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Photoluminescence study of deep levels in CuGaTe2 crystals

Cited by 13 publications

References 9 publications

Study of polycrystalline bulk CuIn1–xGaxTe2

Study of polycrystalline bulk CuIn1–xGaxTe2

Photoluminescence Study of Deep Levels in CuInS2 Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide

Origin of the Distinct Thermoelectric Transport Properties of Chalcopyrite ABTe2 (A = Cu, Ag; B = Ga, In)

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Photoluminescence Study of Deep Levels in CuInS₂ Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide

Origin of the Distinct Thermoelectric Transport Properties of Chalcopyrite ABTe₂ (A = Cu, Ag; B = Ga, In)