Study of polycrystalline bulk CuIn1–xGaxTe2

Aissaoui, O.; Mehdaoui, S.; Bechiri, L.; Benabdeslem, M.; Benslim, N.; Amara, A.; Otmani, A.; Djessas, K.; Portier, X.

doi:10.1016/j.jlumin.2010.09.028

Cited by 8 publications

(5 citation statements)

References 24 publications

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“…Rare earth ions doping into the semiconductor could enhance the luminescent and fluorescent properties due to its specific 4f electronic structure and unique optical properties such as high quantum efficiencies of absorption light at short wavelength and subsequent emission light at long wavelength. [24][25][26][27][28] The carrier concentration of Cd-doped CuInTe 2 has been reported by Cheng et al [18] The goal of our study on rare earth doping in CuInTe 2 material is to study the essential photoelectric mechanism of an Eu-doped CuInTe 2 semiconductor with chalcopyrite structure and investigate the correlation between their electronic structures and hybridization energy levels. In this study, empirical electron theory (EET) has been used to study the valance electric structures and band gap of Eu-doped CuInTe 2 since it has the advantage of being a simple calculation model without any integral and differential modes and much more parameters.…”

Section: Introductionmentioning

confidence: 99%

Correlation between electronic structure and energy band in Eu-doped CuInTe₂semiconductor compound with chalcopyrite structure

Wang

Guo

2017

Chinese Phys. B

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The Eu-doped Cu(In, Eu)Te 2 semiconductors with chalcopyrite structures are promising materials for their applications in the absorption layer for thin-film solar cells due to their wider band-gaps and better optical properties than those of CuInTe 2 . In this paper, the Eu-doped CuInTe 2 (CuIn 1−x Eu x Te 2 , x = 0, 0.1, 0.2, 0.3) are studied systemically based on the empirical electron theory (EET). The studies cover crystal structures, bonding regularities, cohesive energies, energy levels, and valence electron structures. The theoretical values fit the experimental results very well. The physical mechanism of a broadened band-gap induced by Eu doping into CuInTe 2 is the transitions between different hybridization energy levels induced by electron hopping between s and d orbitals and the transformations from the lattice electrons to valence electrons for Cu and In ions. The research results reveal that the photovoltaic effect induces the increase of lattice electrons of In and causes the electric resistivity to decrease. The Eu doping into CuInTe 2 mainly influences the transition between different hybridization energy levels for Cu atoms, which shows that the 3d electron numbers of Cu atoms change before and after Eu doping. In single phase CuIn 1−x Eu x Te 2 , the number of valence electrons changes regularly with increasing Eu content, and the calculated band gap E g also increases, which implies that the optical properties of Eu-doped CuIn 1−x Eu x Te 2 are improved.

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Section: Introductionmentioning

confidence: 99%

Correlation between electronic structure and energy band in Eu-doped CuInTe₂semiconductor compound with chalcopyrite structure

Wang

Guo

2017

Chinese Phys. B

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“…Furthermore, when the laser power is raised, the peak position shifts towards higher energies. This behaviour is associated with a donor-acceptor pair (DAP) recombination [3,19].…”

Section: Photoluminescence Analysismentioning

confidence: 99%

“…The development of ternary semiconductor structure of ABC 2 chalcopyrite-type is mainly focusing on sulfur-based compounds or selenium. Except the research works reported by Yılmaz et al [1] and Yandjah et al [2] devoted to the study of annealed Cu (In, Ga)Te 2 thin films and the investigation of bulk samples [3], no significant reports in the literature related to the Cu (In, Ga)Te 2 quaternary tellurides can be found so far. Numerous experimental results…”

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confidence: 99%

Photoluminescence of polycrystalline CuIn0.5Ga0.5Te2 thin films grown by flash evaporation

Yandjah

Bechiri

Benabdeslem

et al. 2018

Chinese Journal of Physics

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This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. Highlights  Layers were deposited by flash evaporation from CuIn 0.5 Ga 0.5 Te 2 powder.  The chalcopyrite structure of CuIn 0.5 Ga 0.5 Te 2 material is confirmed by X-ray.  Optical measurements yielded a band gap of 1.27eV.  PL study revealed that the radiative emissions arise from (FB) and (DAP) recombination.

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“…This trend is in a good agreement with the report for the other chalcopyrite structure. 20 ] 0 , respectively, through the intrinsic defects in the Cu-poor conditions. 21,22 The defect type is important to explain the changes in a and c.…”

Section: All Specimens Became Cu-poor With the [Cu]/([zn]+[sn]+[sb]+[...mentioning

confidence: 99%

Characterizations of Ga-Doped Cu_1.75Zn(Sn_1−xGa_x)Se₄Bulks

Kuo

Tsega

2014

ECS J. Solid State Sci. Technol.

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p-type Ga-doped Cu1.75ZnSn1−xGaxSe4(x = 0–0.6) bulks were prepared by a liquid−phase reactive sintering method at 600°C with soluble sintering aids of Sb2S3 and Te. Defect physics and chemistry were studied by measuring electrical properties of Ga-doped CZTSe as a function of dopant concentration. With the value x increasing from 0 to 0.6, the carrier concentration increased from 1017 to 1019 cm−3, but the hole mobility greatly enhanced from 1.23 to a maximum value of 8.6 cm2 V−1 s−1 then decreased to about 1.23 cm2 V−1 s−1 at x = 0.6. The largely increased carrier concentration and the slightly changed lattice parameters for Ga-CZTSe with increasing the Ga content are related to the types of its defects. Ga-CZTSe at x = 0.4 with carrier concentration of 8.9 × 1018 cm−3 showed the highest mobility of around 8.6 cm2 V−1 s−1. This result may provide a guide to fabricate a potential absorber for thin-film solar cells through further optimization in Cu-Zn-Sn-Se system.

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Study of polycrystalline bulk CuIn1–xGaxTe2

Cited by 8 publications

References 24 publications

Correlation between electronic structure and energy band in Eu-doped CuInTe₂semiconductor compound with chalcopyrite structure

Correlation between electronic structure and energy band in Eu-doped CuInTe₂semiconductor compound with chalcopyrite structure

Photoluminescence of polycrystalline CuIn0.5Ga0.5Te2 thin films grown by flash evaporation

Characterizations of Ga-Doped Cu_1.75Zn(Sn_1−xGa_x)Se₄Bulks

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Study of polycrystalline bulk CuIn1–xGaxTe2

Cited by 8 publications

References 24 publications

Correlation between electronic structure and energy band in Eu-doped CuInTe2semiconductor compound with chalcopyrite structure

Correlation between electronic structure and energy band in Eu-doped CuInTe2semiconductor compound with chalcopyrite structure

Photoluminescence of polycrystalline CuIn0.5Ga0.5Te2 thin films grown by flash evaporation

Characterizations of Ga-Doped Cu1.75Zn(Sn1−xGax)Se4Bulks

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Correlation between electronic structure and energy band in Eu-doped CuInTe₂semiconductor compound with chalcopyrite structure

Correlation between electronic structure and energy band in Eu-doped CuInTe₂semiconductor compound with chalcopyrite structure

Characterizations of Ga-Doped Cu_1.75Zn(Sn_1−xGa_x)Se₄Bulks