Photoluminescence study of deep etched InGaAs/GaAs quantum wires and dots defined by low-voltage electron beam lithography

Abstract

Articles you may be interested inTime-resolved photoluminescence of lithographically defined quantum dots fabricated by electron beam lithography and wet chemical etching Low voltage electron-beam lithography based InGaAs/GaAs quantum dot arrays with 1 meV luminescence linewidths J.High quantum efficiency InGaAs/GaAs quantum wires defined by selective wet etching

Electroluminescence from quantum dots fabricated with nanosphere lithography

“…[28][29][30] Only when compared to limited-area patterned QDs formed with advanced lithographic techniques do we see our NSL-patterned QDs exhibiting broader emission linewidths. 17 Though PL and EL emission from the samples is weak, there are multiple avenues available for improving emission efficiency. First, only a single QW was used for this work.…”

“…Such resolution can be obtained with techniques such as holographic, electron-beam, or nano-imprint lithography, to name the most prevalent. [16][17][18][19][20] The patterning of the semiconductor surface used to fabricate NLD QDs (either bottom-up or top-down) can often damage the surface, rendering such NLD-QDs inefficient for optoelectronic applications. Recent work, using e-beam lithography to pattern epitaxially grown InGaAs layers, followed by MOCVD overgrowth, has demonstrated lasing from both patterned QD and nanopore InGaAs active regions.…”

Fabrication of GaInAs quantum disks using self-organized InP islands as a mask in wet chemical etching

“…2 Furthermore, to reduce the proximity effect and to enhance the throughput of electron beam lithography, low-energy electrons have been used. 3 Several alternatives to electron-beam lithography for mask fabrication have also been developed. Typically, in these methods nanoscale particles are introduced to the surface.…”

Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films

“…The behavior of semiconductor nanostructures embedded in dielectric host is significantly different from other low-dimensional semiconductor heterostructures [1,2,[10][11][12][13]17]. It is well known that when the dimensions of crystallites approach the atomic scale, significant changes occur in the electronic, optical, magnetic, or thermodynamic properties compared with those of bulk materials, and also electronic states of these nanostructures have to be treated with an account for interactions with real surfaces or interfaces and the surrounding material.…”