Electroluminescence from quantum dots fabricated with nanosphere lithography

Lan, Yu; Law, Stephanie; Wasserman, D.

doi:10.1063/1.4751341

Cited by 8 publications

(8 citation statements)

References 33 publications

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“…The fabrication of quantum dots via top-down lithography, using any number of patterning techniques [236][237][238][239], offers the exact control of confinement in the growth direction (via epitaxy), and the determinant control of the lateral positioning of the QDs. However, achieving the high density needed for efficient emission and the small feature size needed to reap the purported benefits of lateral quantization requires a small pitch and small lithographic features (on the order of 10s of nm).…”

Section: Intersublevel Quantum Dot Emittersmentioning

confidence: 99%

Next-generation mid-infrared sources

Jung

Bank

Lee

et al. 2017

J. Opt.

139

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The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital applications in molecular sensing, security and defense, energy conservation, and potentially in free-space communication. The recent development and rapid commercialization of new coherent mid-infrared sources have spurred significant interest in the development of mid-infrared optical systems for the above applications. However, optical systems designers still do not have the extensive optical infrastructure available to them that exists at shorter wavelengths (for instance, in the visible and near-IR/telecom wavelengths). Even in the field of optoelectronic sources, which has largely driven the growing interest in the mid-infrared, the inherent limitations of state-of-the-art sources and the gaps in spectral coverage offer opportunities for the development of new classes of lasers, light emitting diodes and emitters for a range of potential applications. In this topical review, we will first present an overview of the current state-of-the-art mid-IR sources, in particular thermal emitters, which have long been utilized, and the relatively new quantum-and interband-cascade lasers, as well as the applications served by these sources. Subsequently, we will discuss potential midinfrared applications and wavelength ranges which are poorly served by the current stable of mid-IR sources, with an emphasis on understanding the fundamental limitations of the current source technology. The bulk of the manuscript will then explore both past and recent developments in midinfrared source technology, including narrow bandgap quantum well lasers, type-I and type-II quantum dot materials, type-II superlattices, highly mismatched alloys, lead-salts and transitionmetal-doped II-VI materials. We will discuss both the advantages and limitations of each of the above material systems, as well as the potential new applications which they might serve. All in all, this topical review does not aim to provide a survey of the current state of the art for mid-IR sources, but instead looks primarily to provide a picture of potential next-generation optical and optoelectronic materials systems for mid-IR light generation.

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Section: Intersublevel Quantum Dot Emittersmentioning

confidence: 99%

Next-generation mid-infrared sources

Jung

Bank

Lee

et al. 2017

J. Opt.

139

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“…Subsequently, the sample was coated with a hexagonal close-packed monolayer of colloidal polystyrene nanospheres with nominal diameter of ∼290 or 390 nm (Bang laboratories, Inc.) by using the air/water interface method. 62 Subsequently, the nanospheres were trimmed to smaller diameter of ∼180 or 300 nm (±20 nm), respectively, in the FEMTO oxygen (O 2 ) plasma cleaner. Using the resized nanospheres as a blocking mask, Au catalyst with nominal thickness of 20 nm (±2 nm) was evaporated onto the In 0.53 Ga 0.47 As sample using the CHA SEC-600 electron beam evaporator operating under a chamber pressure of 1 × 10 −6 Torr.…”

Section: Experimental Methodsmentioning

confidence: 99%

Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching

et al. 2017

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Producing densely packed high aspect ratio InGaAs nanostructures without surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices. However, conventional dry etching methods are known to produce irreversible damage to III-V compound semiconductors because of the inherent high-energy ion-driven process. In this work, we demonstrate the realization of ordered, uniform, array-based InGaAs pillars with diameters as small as 200 nm using the damage-free metal-assisted chemical etching (MacEtch) technology combined with the post-MacEtch digital etching smoothing. The etching mechanism of InGaAs is explored through the characterization of pillar morphology and porosity as a function of etching condition and indium composition. The etching behavior of InGaAs, in contrast to higher bandgap semiconductors (e.g., Si or GaAs), can be interpreted by a Schottky barrier height model that dictates the etching mechanism constantly in the mass transport limited regime because of the low barrier height. A broader impact of this work relates to the complete elimination of surface roughness or porosity related defects, which can be prevalent byproducts of MacEtch, by post-MacEtch digital etching. Side-by-side comparison of the midgap interface state density and flat-band capacitance hysteresis of both the unprocessed planar and MacEtched pillar InGaAs metal-oxide-semiconductor capacitors further confirms that the surface of the resultant pillars is as smooth and defect-free as before etching. MacEtch combined with digital etching offers a simple, room-temperature, and low-cost method for the formation of high-quality InGaAs nanostructures that will potentially enable large-volume production of InGaAs-based devices including three-dimensional transistors and high-efficiency infrared photodetectors.

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“…From this point of view, there remains room for further enhancement of the light extraction of VLEDs compared to the current performance of roughsurface VLEDs. Nanosphere lithography is well known as an effective method for improving the light-extraction efficiency because of its simplicity, good uniformity, low cost, and flexibility in controlling structural features, which makes the process suitable for ordered and large-scale nanofabrication [7,8]. Unfortunately, electrical degradation caused by the damage during the dry etching process remains a problem.…”

mentioning

confidence: 99%

Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures

Kim

Chung

et al. 2014

Opt. Lett.

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We investigated GaN-based vertical light-emitting diodes (VLEDs) with periodic and conical nanopillar arrays (CNAs) to improve the light-output efficiency. We found that a 470 nm diameter and 0.8-0.9 μm height increased the light output, and the devices suffered no significant electrical property degradations. The light-output power was 272% and 5.1% greater than flat- and rough-surface VLEDs at 350 mA, respectively. These improved optical properties are attributed to the optimized CNAs, which increase the effective photon escape cone and reduce the total internal reflection at the n-GaN-air interface. We also investigated the emission characteristics and mechanisms with finite-difference time-domain simulations.

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Electroluminescence from quantum dots fabricated with nanosphere lithography

Abstract: Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells Appl.

Cited by 8 publications

References 33 publications

Next-generation mid-infrared sources

Next-generation mid-infrared sources

Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching

Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures

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