Photoluminescence studies on Si-doped GaAs/Ge

Abstract

Photoluminescence (PL) spectroscopy has been used to study the silicon incorporation in polar GaAs on nonpolar Ge substrates. Shifts of PL spectra towards higher energy with growth temperature, trimethylgallium (TMGa) and arsine (AsH3) mole fractions were observed. The full width at half maximum increases with increasing growth temperature, AsH3 and TMGa mole fractions. The peak at 1.49 eV has been attributed to band-to-acceptor transition involving residual carbon. The PL peak energy shifts towards higher energy with increasing growth temperature due to the increase in electron concentration. A vacancy control model may explain the PL shift towards higher energy with increasing AsH3 mole fraction. The PL peak shifts towards higher energy with increasing TMGa mole fraction. The experimental results about the growth temperature, trimethylgallium, and arsine mole fractions on silicon-doped GaAs on GaAs were presented for comparison. The outdiffusion of Ge into the GaAs epitaxial layer was hardly to be seen from the secondary ion mass spectroscopy result.

Self-assembled InAs quantum dots on anti-phase domains of GaAs on Ge substrates

“…This result is consistent with Brammertz's result except for the peak at $ 1.35 eV. The peak at 1.04 eV is due to a Ge Ga -Ge As complex, whereas the peak at 1.17 eV is attributed to the Ge Ga -V Ga complex [27]. One reasonable explanation from this result is that AlAs compound semiconductor is an ineffectively blocking layer if Ge substrate is oriented.…”

Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

“…The main peak positions of the GaAsSb samples and GaAs substrate are marked as A, B, C and D1, which were located at 1.396, 1.379, 1.338 and 1.510 eV, respectively. D2 (1.494 eV) has been attributed to band to acceptor (B-A) transition 28 . It can be clearly seen that the peak energy shows a red shift with the increase of Sb component.…”

Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates

“…The details of the growth procedure can be found elsewhere [24][25][26]. The back ohmic contact was made depositing Au: Ge and an overlayer of Au and annealing at 450°C for approximately 2 min in an ultra-high pure (UHP) N 2 flow.…”