1999
DOI: 10.1002/(sici)1521-3951(199901)211:1<85::aid-pssb85>3.0.co;2-0
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Photoluminescence Studies on Self-Organized InAlAs/AlGaAs Quantum Dots under Pressure

Abstract: The pressure dependence of the low temperature photoluminescence (PL) in self-organized In 0X5 Al 0X5 As/Al 0X25 Ga 0X75 As quantum dots (QD) has been investigated up to 8 GPa. Interesting features of the QD PL observed in our study are: (i) a decrease in the linewidth up to 1.8 GPa, (ii) no significant shift in the PL energy between 0.8 and 2.2 GPa, (iii) anticrossing behavior in the region of 2.2 to 2.6 GPa, and (iv) complete quenching of PL beyond 2.6 GPa. The observed pressure behavior is explained on the … Show more

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Cited by 12 publications
(2 citation statements)
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“…Then the height of the potential barrier for shallow donor impurities as a function of Al concentration x and the hydrostatic pressure is given by V 0 (P) = 0.6 E g (x, P); (15) here we consider the Al concentration equal to x = 0.30. With these variations the donor binding energy is obtained, for different pressures and dot sizes, using the variational method within the effective mass approximation.…”
Section: Theorymentioning
confidence: 99%
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“…Then the height of the potential barrier for shallow donor impurities as a function of Al concentration x and the hydrostatic pressure is given by V 0 (P) = 0.6 E g (x, P); (15) here we consider the Al concentration equal to x = 0.30. With these variations the donor binding energy is obtained, for different pressures and dot sizes, using the variational method within the effective mass approximation.…”
Section: Theorymentioning
confidence: 99%
“…Photoluminescence studies of self-organized InAlAs/AlGaAs quantum dots under pressure were carried out by Phillips et al [15]. The effect of hydrostatic pressure on the optical transitions in self-assembled InAs/GaAs quantum dots was studied by Duque et al [16].…”
Section: Introductionmentioning
confidence: 99%