The binding energy of shallow hydrogenic impurities in a spherical quantum dot under isotropic hydrostatic pressure is calculated using a variational approach within the effective mass approximation. The binding energy is computed as a function of hydrostatic pressure, dot size and impurity position. The results show that the impurity binding energy increases with the pressure for any position of the impurity. Also, we have found that the binding energy depends on the location of the impurity and the pressure effects are less pronounced for impurities on the edge.

Within the effective-mass approximation and using a variational method the binding energies of hydrogenic impurities in spherical GaAs-(Ga,Al)As quantum dots are calculated considering the effect of a spatially dependent screening through an r-dependent dielectric response. It is found that the r-dependent dielectric response increases the binding energies when compared with those found using constant screening. The effect is more important for acceptors than for donors and must be taken into account in calculations that include the binding energies of acceptors impurities in GaAs-(Ga,Al)As quantum dots.

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