Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

Veal, T. D.; Piper, Louis F. J.; Jefferson, P. H.; Mahboob, Imran; McConville, Christopher F; Merrick, M.; Hosea, T. J. C.; Murdin, B. N.; Hopkinson, M.

doi:10.1063/1.2126117

Cited by 54 publications

(43 citation statements)

References 19 publications

(31 reference statements)

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“…1 This phenomenon has been widely exploited to extend the wavelength of the arsenides into the 1.3 -1.55 μm region for optical communication technologies with the addition of In allowing GaInNAs epilayers to be lattice matched to GaAs or InP substrates. 2 In addition to this, the incorporation of N into narrow gap semiconductors, such as InAs, 3 GaSb 4, 5 and InSb, 6 has been investigated to produce materials for accessing the 2 -5 μm and 8 -14 μm wavelength regions where there are atmospheric transmission windows. In particular, GaNSb alloys, the subject of this Letter, offer the prospect of extending the wavelength of the GaSb band gap from 1.7 μm into the 2-5 μm range, not only to exploit that atmospheric transmission window, but also for thermophotovoltaics and for light emitting diodes for detection of several important gases, such as CH 4 , CO 2 , and CO.…”

confidence: 99%

Controlled nitrogen incorporation in GaNSb alloys

et al. 2011

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The incorporation of N in molecular-beam epitaxy of GaNxSb1−x alloys with x ⩽ 0.022 has been investigated as a function of temperature (325–400°C) and growth rate 0.25–1.6 μmh−1. At fixed growth rate, the incorporated N fraction increases as the temperature is reduced until a maximum N content for the particular growth rate reached. At each temperature, there is a range of growth rates over which the N content is inversely proportional to the growth rate; the results are understood in terms of a kinetic model. The systematic growth rate- and temperature-dependence enables the N content and resulting band gap to be controlled

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confidence: 99%

Controlled nitrogen incorporation in GaNSb alloys

et al. 2011

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“…By substituting the group V-atom with low concentrations of nitrogen, large band gap reductions corresponding to wavelengths in the long or very long-wavelength infrared ranges have been reported. [1][2][3][4][5][6][7][8][9][10][11][12] The strong modification of the conduction band when dilute amounts of the host anion of the compound semiconductor is replaced is thought to be caused by N-induced states lying near to the conduction band minimum. [13][14][15][16][17][18][19][20][21] For the alloy GaN x Sb 1Àx , the band gap red shift is especially large.…”

Section: Introductionmentioning

confidence: 99%

Increased p-type conductivity in GaNxSb1−x, experimental and theoretical aspects

Segercrantz

Makkonen

Slotte

et al. 2015

Journal of Applied Physics

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The large increase in the p-type conductivity observed when nitrogen is added to GaSb has been studied using positron annihilation spectroscopy and ab initio calculations. Doppler broadening measurements have been conducted on samples of GaN x Sb 1Àx layers grown by molecular beam epitaxy, and the results have been compared with calculated first-principle results corresponding to different defect structures. From the calculated data, binding energies for nitrogen-related defects have also been estimated. Based on the results, the increase in residual hole concentration is explained by an increase in the fraction of negative acceptor-type defects in the material. As the band gap decreases with increasing N concentration, the ionization levels of the defects move closer to the valence band. Ga vacancy-type defects are found to act as positron trapping defects in the material, and the ratio of Ga vacancy-type defects to Ga antisites is found to be higher than that of the p-type bulk GaSb substrate. Beside Ga vacancies, the calculated results imply that complexes of a Ga vacancy and nitrogen could be present in the material. V C 2015 AIP Publishing LLC.

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“…As a consequence, the BAC parameters for InAsN are usually determined with low accuracy. Recently, Zhuang et al 12 performed PL studies on InAsN/InAs samples similar to those studied in this work, and obtained a value of C MN = 2.5 eV at 4 K and a value of C MN = 2.7 eV at 300 K. Kudrawiec et al 18 reported PR spectra of similar samples with N contents up to ϳ1% and obtained C MN = 2.7 eV at 20 K. Previous studies obtained much lower C MN values ͑Veal et al 11 found a value of C MN = 1.77 eV with PL at 80 K; Shih et al 9 and Kuroda et al 6 performed absorption measurements at 300 K and obtained C MN = 1.68 eV and 1.86 eV, respectively, after correcting for the Burstein-Moss effect͒. Vurgaftman and Meyer 31 give a recommended value of 2.0 eV.…”

Section: Pl and Optical Absorptionmentioning

confidence: 78%

“…5,9,[11][12][13]18 The results are usually analyzed in terms of the BAC model, which allows one to calculate the fundamental band gap energy of InAs 1−x N x ͑i.e., the energy of the E − subband͒ as a function of composition…”

Section: Pl and Optical Absorptionmentioning

confidence: 99%

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

Ibáñez

Oliva

Mare

et al. 2010

Journal of Applied Physics

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We perform a structural and optical characterization of InAs 1−x N x epilayers grown by molecular beam epitaxy on InAs substrates ͑x Շ 2.2%͒. High-resolution x-ray diffraction ͑HRXRD͒ is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy ͑ToF-SIMS͒ measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard's law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing ͑BAC͒ model. We find that the room-temperature coupling parameter for InAsN within the BAC model is C NM = 2.0Ϯ 0.1 eV.

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Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

Cited by 54 publications

References 19 publications

Controlled nitrogen incorporation in GaNSb alloys

Controlled nitrogen incorporation in GaNSb alloys

Increased p-type conductivity in GaNxSb1−x, experimental and theoretical aspects

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

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