Photoluminescence spectra of xenon implanted natural diamonds

Polarization of luminescence and site symmetry of the Xe center in diamond

“…The Xe center-related zero phonon line (ZPL) at 811.7 nm (1.527 eV) was first observed in cathodoluminescence [6]. In our recent papers [7,8], photoluminescence spectra of several Xe ion implanted natural diamonds within the dose range of 1 Â 10 13 -5 Â 10 14 ion/cm 2 were discussed. On the basis of the post-implantation thermal annealing behavior of the Xe center luminescence, it was concluded that the vacancies are involved in the formation of this center.…”

Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond

“…3,a) [11,12]. This behavior indicates presence of two excited states with energy splitting equal to the spectroscopic splitting ΔE sp = = E 793.1 -E 811.7 = 289 cm -1 (see Fig.…”

“…1,a [11]. The lines at 575 nm (nitrogen related) and at 741 nm (GR1 center) are clearly seen on the broad background.…”

“…Moreover, the irradiation induced defects play a significant role in the inhomogeneous broadening of the ZPL at 811.7 nm. It was observed at T = 1.5 K [11] that the ZPL broadened from width of 5.5 cm -1 for dose of 10 13 ion/cm 2 to 15 cm -1 for the 5·10 14 ion/cm 2 sample. These results clearly show that this ZPL is broadening inhomogeneously (thermal broadening is small) due to the random internal fields from the radiation induced defects like points defects, dislocations, and agglomerated defects, as such radiation induced defects may withstand thermal annealing.…”

“…A few papers have been published on the optical properties of the Xe center in diamond [11][12][13][14]. A brief summary of the relevant results is presented below.…”