Polarization of luminescence and site symmetry of the Xe center in diamond

Bergman, Alexandra; Зайцев, А.М.; Gorokhovsky, A.A.

doi:10.1016/j.jlumin.2006.08.060

Cited by 22 publications

(31 citation statements)

References 17 publications

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“…Xenon is particularly interesting since it exhibits narrow PL lines in the NIR and believed to have similar symmetry to the NV center [118]. Interestingly, xenon implantation enabled the use of diamond as a light emitting diode (LED) with xenon optical centers as active emitters [119].…”

Section: Other Ionsmentioning

confidence: 99%

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Novel Single Photon Emitters Based on Color Centers in Diamond

Aharonovich¹,

Castelletto²,

Prawer³

2011

AIP Conference Proceedings

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Exploitation of emerging quantum technologies requires efficient fabrication of key building blocks. Single photon sources are one of these fundamental constituents that are presently pushing the bounds of existing materials and fabrication techniques. Color centers in diamond are very attractive in this respect since they are the only photostable solid-state single photon emitters operating at room temperature known to date.The Nitrogen-Vacancy (NV) complex is one example of such an optical center and has been subject to intensive research due to the availability of optical readout of its individual electronic spin state. However, the NV center has fundamental limitations: strong phonon coupling of the excited state which results in a broad photoluminescence spectrum (~ 100 nm) of which the zero-phonon line makes up only 4%. Emission of single photons in the zero phonon line is then extremely weak, typically on the order of a few thousands of photons per second. Such count rates are insufficient for the realization of advanced quantum information processing protocols.To move beyond the limitations of the NV there is an emerging need to identify and fabricate novel diamond based single photon emitters with improved photo-physical characteristics. Development of such emitters is the main goal of this thesis.We first concentrate on the recent progress in materials science and fabrication techniques of high quality nanodiamond crystals. We demonstrate the ability to grow high quality, submicron sized diamond crystals with a control over their final size and density using a microwave assisted chemical vapor deposition.We then study two methodologies to engineer diamond based single photon emitters in the grown nanodiamonds. In the first, nickel is implanted into the substrate onto which the nanocrystals are subsequently grown. During the diamond growth, the substrate is slightly etched and the nickel atoms diffuse and incorporate into the growing crystals. In the second we employ direct ion implantation of nickel into already deposited individual diamond nanocrystals. Optical and correlation spectroscopy measurements reveal that these methodologies are effective to fabricate nickel related single photon emitters, with zero phonon lines centered in the near infra-red and a short excited state lifetime (~3 ns).ii Furthermore, the ability of diamond to host various luminescence centers prompted the discovery of a new class of ultra bright single photon emitters. These new emitters found in diamond crystals grown on sapphire substrate and assigned to chromium, which is present in the substrate and incorporated into the crystal during the growth. Nanodiamonds hosting these centers deliver outstanding performance such as narrow photoluminescence in the near infra-red and ultra bright single photon emission with count rate of ~ 3.2×10 6 counts/s -the brightest single photon source known to date.Importantly, some of the emitters exhibit a photon statistics without any photon bunching at saturation, indicating a two-...

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Section: Other Ionsmentioning

confidence: 99%

“…This result is promising for a realization of electrical excitation of other single photon emitters. Polarization measurements and ion dose dependence measurements have been performed [118,120] and the result concluded that xenon atom is occupying a semi di-vacancy site, V-Xe-V, oriented along the <111> direction.…”

Section: Other Ionsmentioning

confidence: 99%

Novel Single Photon Emitters Based on Color Centers in Diamond

Aharonovich¹,

Castelletto²,

Prawer³

2011

AIP Conference Proceedings

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“…A few papers have been published on the optical properties of the Xe center in diamond [11][12][13][14]. A brief summary of the relevant results is presented below.…”

Section: Luminescence Spectra Of the Xe Center In Diamondmentioning

confidence: 99%

“…The DebyeWaller factor, which is a measure of the linear electronphonon coupling, can be determined as a ratio of the integral intensities of ZPL and the total vibronic spectrum (ZPL + sideband) [15]. This factor was estimated as exp (-S) = 0.9 at T = 8 K [12], and 0.3 at 300 K [13]. This value reflects a low coupling strength as compared to several other defects in diamond [1,16,17].…”

Section: The Xe Center Photoluminescencementioning

confidence: 99%

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Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond

Deshko

Gorokhovsky

2010

Low Temperature Physics

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Ion implantation in diamond creates optically active defects which have emission lines in broad spectral regions, and may be used in advanced photonics and optical communication applications. A brief review of the photoluminescence properties of Xe + ion implanted diamond is presented. The Xe-related center is of particular interest as this center is one of a few centers (Ni, Si, Cr) in diamond having sharp emission lines in the infrared spectral region, specifically at 813 and 794 nm. The paper discusses an approach to determine an important and difficult to measure conversion efficiency of implanted ions into emitting optical centers. The method uses a micro-luminescence confocal mapping and statistical analysis based on a compound Poisson distribution, accounting for both the implanted centers and the optically excited centers statistics. Results of numerical simulations and experimental measurements are presented.PACS: 78.55.-m Photoluminescence, properties and matherials; 73.20.Hb Impurity and defect levels; energy states of adsorbed species.

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Fabrication of Ultrathin Single‐Crystal Diamond Membranes

et al. 2008

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The extreme properties of diamond have led its use in a wide variety of applications from drilling for oil to ultra sharp knives for eye surgery. In the nanotechnology realm, diamond is being recognized as a material with great potential. For example, the extremely high modulus suggests that diamond could be used in Nano-Electro-Mechanical systems (NEMS) and quantum NEMS applications since diamond cantilevers will have higher oscillation frequencies than other materials. Furthermore diamond is chemically inert and biocompatible, and the surface can be functionalized which makes it attractive for potential nano-bio

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Polarization of luminescence and site symmetry of the Xe center in diamond

Cited by 22 publications

References 17 publications

Novel Single Photon Emitters Based on Color Centers in Diamond

Novel Single Photon Emitters Based on Color Centers in Diamond

Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond

Fabrication of Ultrathin Single‐Crystal Diamond Membranes

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