Photoluminescence signature of silicon interstitial cluster evolution from compact to extended structures in ion-implanted silicon

Abstract

Low temperature photoluminescence (PL) studies have been carried out on ion-implanted silicon in order to elucidate upon the structure evolution of the self-interstitial (I) clusters as a function of implantation dose, energy, species and post-implantation annealing conditions. PL measurements on as-implanted and low temperature annealed (up to 450 • C) Si show a sharp X band and a W band at 1200 nm and 1218 nm, respectively. The W band shows gradual quenching of PL above ∼60 K with a characteristic activation energy of 59 meV. We argue that the W band originates from a compact di-interstitial cluster in Si. Short duration annealing at 600 • C results in multiple sharp peaks in the range of 1228-1400 nm for the high energy (MeV) and high dose ( 1 × 10 12 cm −2 ) implantation, while low energy (keV) or low dose ions induce two broad peaks in the same wavelength range. Prolonged annealing at 600 • C induces primarily two broad peaks centred at 1322 nm and 1392 nm. These broad, but distinct, PL signatures are attributed to a chain of I-clusters, while the multiple sharp peaks possibly result from multiple configurations/ excited states of the compact but bigger I-clusters. For annealing at and above 680 • C and dose of 1 × 10 13 cm −2 , the sharp PL peak observed at 1376 is attributed to {3 1 1} rod-like defects. We argue that the changing line shape and energy of the PL spectra with processing temperature is a possible indicator of the shape evolution of the clusters from compact to extended structures as predicted recently from simulation.

Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon

“…The tri-Si-interstitial clusters, for example, are thought to be the origin of the W-line emission at 1218 nm. [4][5][6] The {311}…”

Влияние Температуры Измерения На Люминесцентные Свойства (113) Дефектов В Кремнии, Имплантированном Ионами Кислорода

“…1 приведены спектры ФЛ исследуемых образ-цов при разных температурах измерения в диапазоне 1300−1420 нм. Приведенные линии обусловлены обра-зованием (113) дефектов [2][3][4][5][6]. Эти линии доминиру-ют в спектрах.…”

“…• C, приводит к появлению линии фото-люминесценции (ФЛ) с длиной волны ∼ 1370 нм [1][2][3][4][5]. Наблюдавшаяся корреляция во времени между появле-нием (113) дефектов и линии 1370 нм, выявляемых с помощью методов высокоразрешающей электронной микроскопии (HREM) и ФЛ соответственно, подтверди-ла, что эта линия принадлежит центру, образующемуся из собственных междоузлий в поле напряжений (113) дефекта.…”

A detailed approach for the classification and statistical analysis of irradiation induced defects

“…This may happen during the ion implantation process or due to the working conditions of devices (radiation detectors or devices operating in aerospace or radiative environments). Irradiation induced defects can notably alter device performance, since they are responsible for some detrimental effects such as dopant enhanced diffusion [1], leakage currents [2] or type inversion in radiation detectors [3], and also beneficial, as the photoluminescence of defect clusters in Si [4]. Defects with a large variety of sizes, topologies and different electrical properties coexist within a cascade, which makes extremely complicated to assign an experimental signal to a particular defect, especially without a detailed knowledge of damage characteristics.…”