2005
DOI: 10.1088/0268-1242/20/6/027
|View full text |Cite
|
Sign up to set email alerts
|

Photoluminescence signature of silicon interstitial cluster evolution from compact to extended structures in ion-implanted silicon

Abstract: Low temperature photoluminescence (PL) studies have been carried out on ion-implanted silicon in order to elucidate upon the structure evolution of the self-interstitial (I) clusters as a function of implantation dose, energy, species and post-implantation annealing conditions. PL measurements on as-implanted and low temperature annealed (up to 450 • C) Si show a sharp X band and a W band at 1200 nm and 1218 nm, respectively. The W band shows gradual quenching of PL above ∼60 K with a characteristic activation… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

4
69
0
7

Year Published

2007
2007
2023
2023

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 66 publications
(81 citation statements)
references
References 36 publications
4
69
0
7
Order By: Relevance
“…The tri-Si-interstitial clusters, for example, are thought to be the origin of the W-line emission at 1218 nm. [4][5][6] The {311}…”
mentioning
confidence: 99%
“…The tri-Si-interstitial clusters, for example, are thought to be the origin of the W-line emission at 1218 nm. [4][5][6] The {311}…”
mentioning
confidence: 99%
“…1 приведены спектры ФЛ исследуемых образ-цов при разных температурах измерения в диапазоне 1300−1420 нм. Приведенные линии обусловлены обра-зованием (113) дефектов [2][3][4][5][6]. Эти линии доминиру-ют в спектрах.…”
Section: экспериментальные результаты и их обсуждениеunclassified
“…• C, приводит к появлению линии фото-люминесценции (ФЛ) с длиной волны ∼ 1370 нм [1][2][3][4][5]. Наблюдавшаяся корреляция во времени между появле-нием (113) дефектов и линии 1370 нм, выявляемых с помощью методов высокоразрешающей электронной микроскопии (HREM) и ФЛ соответственно, подтверди-ла, что эта линия принадлежит центру, образующемуся из собственных междоузлий в поле напряжений (113) дефекта.…”
Section: Introductionunclassified
“…This may happen during the ion implantation process or due to the working conditions of devices (radiation detectors or devices operating in aerospace or radiative environments). Irradiation induced defects can notably alter device performance, since they are responsible for some detrimental effects such as dopant enhanced diffusion [1], leakage currents [2] or type inversion in radiation detectors [3], and also beneficial, as the photoluminescence of defect clusters in Si [4]. Defects with a large variety of sizes, topologies and different electrical properties coexist within a cascade, which makes extremely complicated to assign an experimental signal to a particular defect, especially without a detailed knowledge of damage characteristics.…”
Section: Introductionmentioning
confidence: 99%