Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon

Abstract

Abstract

Photoluminescence associated with {113} defects in oxygen‐implanted silicon

“…In particular, two broad bands are observed at 938 and 891 meV, irrespective of the fluence and type of ions after the 600 °C annealing . The annealing above 600 °C gives rise to a sharp R line attributed to {113} defects . A correlation between the appearance of R line and the size and concentration of {113} defects was also observed in Ref.…”

“…A correlation between the appearance of R line and the size and concentration of {113} defects was also observed in Ref. . In addition, the formation and evolution of the {113} defects depended on the time of annealing at 700 °C, but no simple correlation was found between the density and size of these defects and the intensity of R line .…”

“…With the increasing annealing time, the spectra start to be dominated by a narrow line at ∼903 meV (R line), which is associated with {113} defects . In samples annealed for 1–2 h, the energy position of the line remains practically constant.…”

“…. In addition, the formation and evolution of the {113} defects depended on the time of annealing at 700 °C, but no simple correlation was found between the density and size of these defects and the intensity of R line . It was concluded that, while the presence of {113} defects is essential for R luminescence line to be observed, both very small {113} defects at short (10–20 min) annealing durations and fully developed {113} defects at long annealing times do not contribute to this luminescence.…”

“…It is believed that these self‐interstitials are clustered in {113} habit planes similarly to those in electron‐irradiated silicon, as found by S. Takeda for {113} defects induced at a temperature of 450 °С in a high‐voltage electron microscope . However, comparison of HRTEM images of {113} defects, observed in different studies upon electron irradiation and ion implantation , shows that the implantation‐related defects cannot be interpreted unambiguously as the {113} defects of the interstitial type. Moreover, in situ HRTEM irradiation experiments (JEOL‐4000EX operated at 400 keV) at room temperature demonstrate a strong {113} defect structure variability between vacancy − amorphous − interstitial types depending on a local concentration of point defects (intensity of electron irradiation, foil thickness, etc.)…”