Photoluminescence properties of ZnO epilayers grown on CaF2(111) by plasma assisted molecular beam epitaxy

Ko, Hang-Ju; Chen, Y. F.; Zhu, Zhengguo; Yao, Takafumi; Kobayashi, Ippei; Uchiki, Hisao

doi:10.1063/1.126207

Cited by 218 publications

(119 citation statements)

References 25 publications

(16 reference statements)

Supporting

Mentioning

109

Contrasting

Unclassified

Order By: Relevance

“…Here nanowires with thickness less than 200 nm are represented by "thin wires", while larger ones by "thick wires". The FWHM of the sharp emission band (3.36 eV) for thin wires at 8 K (300K) is about 20 (140) meV which is comparable to those prepared by molecular beam epitaxial techniques [4,9,10]. We attributed this band to the emission originated from the bound exciton complexes (BEC).…”

Section: Resultsmentioning

confidence: 69%

“…Since, it exhibits red-shifting and enhances quadratically with the excitation density, while the BEC emission obeys a linear dependency without energy shifting. The observation of such exciton-exciton scattering process has not been reported for ZnO nanowires grown by USP technique, although there are some articles on such nonlinear optical process in high quality films prepared by other methods [4,9,10]. Hence, it is recognized that due to good crystal quality, the exciton-exciton scattering process is efficient in thin wires.…”

Section: Resultsmentioning

confidence: 98%

See 1 more Smart Citation

Synthesis of optical quality ZnO nanowires utilizing ultrasonic spray pyrolysis

Htay

Tani

Hashimoto

et al. 2008

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

ZnO nanowires were grown by an ultrasonic spray pyrolysis technique. The aspect ratio and size of the wire were dependent mainly on the pH value of a precursor solution and the growth temperature. By high resolution transmission electron microscopic analysis and photoluminescence measurements, it was confirmed that the nanowires are monocrystalline with good optical quality. J Mater Sci: Mater Electron M. T. Htay et. al.

show abstract

Section: Resultsmentioning

confidence: 69%

Section: Resultsmentioning

confidence: 98%

Synthesis of optical quality ZnO nanowires utilizing ultrasonic spray pyrolysis

Htay

Tani

Hashimoto

et al. 2008

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

show abstract

“…1,2) ZnO는 우수한 압전성, 투 명전도성, 광 방출특성, 화학적 안전성 등 전자소자 또는 광소자로 응용할 수 있는 여러 특성을 가지고 있어 관 심이 집중되고 있다. 3,4) ZnO의 exciton binding 에너지는 기존의 GaN의 3배 정도 크며, 단파장 영역에서 효과적 으로 발광하는 light emitting diode (LED) 또는 laser diode (LD) 소재로 주목을 받고 있다.…”

Section: 서 론unclassified

Characteristics of ZnO Nanorod/ZnO/Si(100) Grown by Hydrothermal Method

Jeong¹,

Jin²,

Choi³

et al. 2012

Korean. J. Mater. Res.

View full text Add to dashboard Cite

Nanostructures of ZnO, such as nanowires, nanorods, nanorings, and nanobelts have been actively studied and applied in electronic or optical devices owing to the increased surface to volume ratio and quantum confinement that they provide. ZnO seed layer (about 40 nm thick) was deposited on Si(100) substrate by RF magnetron sputtering with power of 60 W for 5 min. ZnO nanorods were grown on ZnO seed layer/Si(100) substrate at 95 o C for 5 hr by hydrothermal method with concentrations of Zn(NO 3 ) 2 ·6H 2 O [ZNH] and (CH 2 ) 6 N 4 [HMT] precursors ranging from 0.02M to 0.1M. We observed the microstructure, crystal structure, and photoluminescence of the nanorods. The ZnO nanorods grew with hexahedron shape to the c-axis at (002), and increased their diameter and length with the increase of precursor concentration. In 0.06 M and 0.08 M precursors, the mean aspect ratio values of ZnO nanorods were 6.8 and 6.5; also, ZnO nanorods had good crystal quality. Near band edge emission (NBE) and a deep level emission (DLE) were observed in all ZnO nanorod samples. The highest peak of NBE and the lower DLE appeared in 0.06 M precursor; however, the highest peak of DLE and the lower peak of NBE appeared in the 0.02 M precursor. It is possible to explain these phenomena as results of the better crystal quality and homogeneous shape of the nanorods in the precursor solution of 0.06 M, and as resulting from the bed crystal quality and the formation of Zn vacancies in the nanorods due to the lack of Zn ++ in the 0.02 M precursor.

show abstract

“…A broad peak centered at 3.363 eV of H-donor-bound exciton emission ͑I 4 ͒ covers the range of 3.369-3.355 eV, 15 and the free exciton emissions accompanied by single phonon ͑FE-1LO͒ and dual phonons ͑FE-2LO͒ are also observed at 3.310 and 3.238 eV with an interval of 72 meV. As the FWHM of FX A is very sensitive to the residual strain in film, 14 the narrow FWHM of 3 meV indicates that the residual strain in the ZnO film is very small.…”

mentioning

confidence: 93%

Low-temperature interface engineering for high-quality ZnO epitaxy on Si(111) substrate

Wang

Mei

et al. 2007

Applied Physics Letters

View full text Add to dashboard Cite

Zn O ( 0001 ) ∕ Si ( 111 ) interface is engineered by using a three-step technique, involving low-temperature Mg deposition, oxidation, and MgO homoepitaxy. The double heterostructure of MgO(111)∕Mg(0001)∕Si(111) formed at −10°C prevents the Si surface from oxidation and serves as an excellent template for single-domain ZnO epitaxy, which is confirmed with in situ reflection high-energy electron diffraction observation and ex situ characterization by transmission electron microscopy, x-ray diffraction, and photoluminescence. The low-temperature interface engineering method can also be applied to control other reactive metal/Si interfaces and obtain high-quality oxide templates accordingly.

show abstract

Photoluminescence properties of ZnO epilayers grown on CaF2(111) by plasma assisted molecular beam epitaxy

Cited by 218 publications

References 25 publications

Synthesis of optical quality ZnO nanowires utilizing ultrasonic spray pyrolysis

Synthesis of optical quality ZnO nanowires utilizing ultrasonic spray pyrolysis

Characteristics of ZnO Nanorod/ZnO/Si(100) Grown by Hydrothermal Method

Low-temperature interface engineering for high-quality ZnO epitaxy on Si(111) substrate

Contact Info

Product

Resources

About