2013
DOI: 10.1016/j.mee.2013.01.064
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Photoluminescence properties of Zinc Oxide nanostructures on different substrates obtained by an immersion method

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Cited by 13 publications
(8 citation statements)
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“…The first appeared peak in the UV region around 387 nm has been seen for both structures due to the near broad band-gap edge of ZnO. It originates from the recombination of degenerated carriers and excitons [48]. Also, there is a peak in the visible region by the centrality of 642 nm (1.9 eV ) (red wavelength) related to the transition from V o to up the valence band (V.B) [49].…”
Section: Resultsmentioning
confidence: 87%
“…The first appeared peak in the UV region around 387 nm has been seen for both structures due to the near broad band-gap edge of ZnO. It originates from the recombination of degenerated carriers and excitons [48]. Also, there is a peak in the visible region by the centrality of 642 nm (1.9 eV ) (red wavelength) related to the transition from V o to up the valence band (V.B) [49].…”
Section: Resultsmentioning
confidence: 87%
“…The formation and effect of the oxide layer was discussed in detail in our previous paper. 21 The charge transfer process can be described by an equivalent circuit model; an R ct parallel with a C dl .…”
Section: mentioning
confidence: 99%
“…The intensity of UV emission peak for 0.10 M and 0.25 M are clearly seen and higher compared to 0.50 M and 1.00 M, which are too low. Thus, 0.10 M and 0.25 M has higher crystallinity of ZnO nanostructures due to free exciton emission [19]. The crystal quality and optical properties are known to be enhanced when the ratio of UV emission peak intensity and the visible emission peak intensity, I UV /I VIS is increased [17,20,21].…”
Section: Characterization Of Tio 2 : Zno Nanostructures Thin Filmsmentioning
confidence: 99%