Photoluminescence Properties of Tensile-Strained GaAsP/GaInP Single Quantum Wells Grown By Metal Organic Chemical Vapor Deposition

Abstract

Tensile-strained GaAsP/GaInP single quantum well (QW) laser diode (LD) structures have been grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) and related photoluminescence (PL) properties have been investigated in detail. The samples have the same well thickness of 16 nm but different P compositions in a GaAsP QW. Two peaks in roomtemperature (RT) PL spectra are observed for samples with a P composition larger than 0.10. Temperature-and excitationpower-dependent PL spectra have been measured for a sample with a P composition of 0.15. It is found that the two peaks have a 35 meV energy separation independent of temperature and only the low-energy peak exists below 85 K. Additionally, both peak intensities exhibit a monotonous increase as excitation power increases. Analyses indicate that the two peaks arise from the intrinsic-exciton recombination mechanisms of electron-heavy hole (e-hh) and electron-light hole (e-lh). A theoretical calculation based on model-solid theory, taking into account the spin-orbit splitting energy, shows good agreement with our experimental results. The temperature dependence of PL intensity ratio is well explained using the spontaneous emission theory for e-lh and e-hh transitions, from which the ratio can be characterized mainly by the energy separation between the hh and lh states.

Enhanced Incorporation of P into Tensile-Strained GaAs1-yPyLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

“…The thermodynamic equilibrium calculation is performed by HSC Chemistry 40 with Gibbs energy minimization method. The input parameters are the initial Ga, AsH 3 , PH 3 and H 2 gas phase amount, growth temperature, reactor pressure and a GaAs 1-y P y alloying interaction parameter (990 cal/mol). 9,16 The calculation therefore considered the formation of Ga, As hydrides (AsH 3 , AsH 2 , AsH), P hydrides (PH 3 , PH 2 , PH), As 2 , As 4 , P 2 , P 4 , AsP, As 2 P 2 , As 3 P, AsP 3 in the vapor phase, and GaAs 1-y P y alloy in the solid phase.…”

“…It assumes that the thermodynamic equilibrium is reached and the mass of each element is conserved. Since AsH 3 and PH 3 have positive free energies of formation, they appear in negligible amounts at equilibrium. The calculation output is the final amount of all species at thermodynamic equilibrium.…”

“…Several of the key reaction steps associated with PH 3 , AsH 3 and TBAs have been investigated previously. PH 3 has a higher activation energy for decomposition than either As precursors, both homogeneously and heterogeneously.…”

“…• C using arsine (AsH 3 ), phosphine (PH 3 ) and trimethyl gallium ((CH 3 ) 3 Ga, TMGa) as growth sources within * Electrochemical Society Member.…”

MAGNETIC FIELD, PRESSURE AND TEMPERATURE DEPENDENT OPTICAL PROPERTIES IN A GaAs 9.0 P 1.0 QUANTUM DOT

“…GaAsP quantum well structures have been grown by means of MOVPE and the strain-induced piezoelectric field has been studied and it is found that it can be adjusted by the energy band offset [4]. The optical properties of tensile-strained GaAsP/GaInP square quantum wells grown by MOCVD have been investigated with various characteristics of the PL spectra [5].…”