Combined effects of electric field and magnetic field on exciton binding energy as a function of dot radius in a cylindrical GaAs0.9P0.1/GaAs0.6P0.4 strained quantum dot is investigated. The strain contribution includes the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Numerical calculations are performed using variational procedure within the single band effective mass approximation. The interband emission energy as functions of geometrical confinement, electric and magnetic field strengths in the quantum dot is discussed. The diamagnetic shift of exciton as a function of dot radius is found. The quantum confined Stark shifts of exciton for various dot radii are discussed. Optical rectification in the GaAs0.9P0.1/GaAs0.6P0.4 strained quantum dot is computed in the presence of electric and magnetic field strengths. Our results show that the optical rectification strongly depends on the spatial confinement, electric field and magnetic field strength.

Simultaneous effects of magnetic field, pressure and temperature on the exciton binding energies are found in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot. Numerical calculations are carried out taking into consideration of spatial confinement effect. The cylindrical system is taken in the present problem with the strain effects. The electronic properties and the optical properties are found with the combined effects of magnetic field strength, hydrostatic pressure and temperature values. The exciton binding energies and the nonlinear optical properties are carried out taking into consideration of geometrical confinement and the external perturbations.Compact density approach is employed to obtain the nonlinear optical properties. The optical rectification coefficient is obtained with the photon energy in the presence of pressure, temperature and external magnetic field strength. Pressure and temperature dependence on nonlinear optical susceptibilities of generation of second and third order harmonics as a function of incident photon energy are brought out in the influence of magnetic field strength. The result shows that the electronic and nonlinear optical properties are significantly modified by the applications of external perturbations in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot.

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