Photoluminescence properties of nanocrystalline, wide band gap nitrides (C3N4, BN, AIN, GaN)

Siwiec, J.; Sokołowska, A.; Olszyna, A.; Dwiliński, R.; Kamińska, M.; Konwerska-Hrabowska, Joanna

doi:10.1016/s0965-9773(98)00105-6

Cited by 35 publications

(30 citation statements)

References 8 publications

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“…The PL mechanism of wide blue band of AlN nanoparticles and bulk crystal had been reported in some literatures. For example, Hayes et al [29] reported the band with a maximum at 2.8 eV from the AlN nanoparticles, and this phenomenon can be also observed in other literatures [28,30,31]. It is thought the vacancy of N or O impurity was the key factor leading to the wide blue band, but without further giving exact explanations.…”

Section: Resultsmentioning

confidence: 72%

Synthesis and optical property of high purity AlN nanowires

Lei

Yang

Guo

et al. 2007

Materials Science and Engineering: B

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Section: Resultsmentioning

confidence: 72%

Synthesis and optical property of high purity AlN nanowires

Lei

Yang

Guo

et al. 2007

Materials Science and Engineering: B

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“…[9][10][11][44][45][46][47][48] Grzegory et al 44,45 have proposed the equilibrium N 2 pressure over InN, based on differential thermal analysis and annealing experiments at high N 2 pressure. [9][10][11][44][45][46][47][48] Grzegory et al 44,45 have proposed the equilibrium N 2 pressure over InN, based on differential thermal analysis and annealing experiments at high N 2 pressure.…”

Section: Discussionmentioning

confidence: 99%

Calorimetric determination of the enthalpy of formation of InN and comparison with AlN and GaN

et al. 2001

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The standard enthalpy of formation of InN at 298 K has been determined using high-temperature oxidative drop solution calorimetry in a molten sodium molybdate solvent at 975 K. Calorimetric measurements were performed on six InN samples with varying nitrogen contents. The samples were characterized using x-ray diffraction, chemical analysis, electron microprobe analysis, and Brunauer-Emmett-Teller surface area measurement. The variation of the enthalpy of drop solution (kJ/g) with nitrogen content is approximately linear. The data, when extrapolated to stoichiometric InN, yield a standard enthalpy of formation from the elements of −28.6 ± 9.2 kJ/mol. The relatively large error results from the deviation of individual points from the straight line rather than uncertainties in each set of data for a given sample. This new directly measured enthalpy of formation is in good agreement with the old combustion calorimetric result by Hahn and Juza (1940). However, this calorimetric enthalpy of formation is significantly different from the enthalpy of formation values derived from the temperature dependence of the apparent decomposition pressure of nitrogen over InN. A literature survey of the enthalpies of formation of III-N nitride compounds is presented.

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“…[5][6][7][8] Many advanced features, such as the widest band gap (∼6.2 eV), superior thermal conductivity and chemical stability, dielectric properties, and low electronic affinity value (0.25 eV) make AlN a good candidate of optoelectronic material for solid-state white-light-emitting devices. [9][10][11][12][13] AlN ceramics and powders were generally fabricated and investigated a lot before the Millennium, while AlN nanostructures and their light-emitting properties stimulate a deluge of research recently. 1 3 4 27-31 And many attempts have been made to synthesize AlN nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of h-AlN Nanowires via Carbothermal Reduction and Nitridation Method Using Acetylene Black

Yang

Zhu²,

Ruan³

et al. 2010

J. Nanosci. Nanotech.

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Using acetylene black as an assistant reagent in the ammonia atmosphere, one dimensional (1D) hexagonal single crystalline aluminum nitride (AIN) nanowires were successfully synthesized via carbothermal reduction and nitridation method. With smooth surface and uniform diameter, the wool-like product of AIN nanowires grow along [001] direction and are 80-120 nm in diameter and several tens micrometers in length. According to thermodynamic and kinetic analysis, AI2O3 initially was reduced to a volatile suboxide gas Al2O at 1800 degrees C. Then gaseous Al2O was transported by N2/NH3 mixtures to about 1200 degrees C, where 1D AIN nanowires formed by the reaction of Al2O gas, graphite and NH3. Due to high surface area, small particle size and amorphous structure, acetylene black maybe possess more active sites and more effective contact area, which benefits the first step reaction. The electrostatic polar charge model and crystallographic characteristics are employed to explain the growth mechanism of AIN nanowires. To our knowledge, acetylene black is the first time to be used for synthesizing 1D AIN nanostructures via carbothermal reduction and nitridation method, which would be an efficient, economical assistant reagent for fabricating nitride nanostructures.

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Photoluminescence properties of nanocrystalline, wide band gap nitrides (C3N4, BN, AIN, GaN)

Cited by 35 publications

References 8 publications

Synthesis and optical property of high purity AlN nanowires

Synthesis and optical property of high purity AlN nanowires

Calorimetric determination of the enthalpy of formation of InN and comparison with AlN and GaN

Synthesis of h-AlN Nanowires via Carbothermal Reduction and Nitridation Method Using Acetylene Black

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