Photoluminescence properties of a-SiN_x: H alloys

Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films

“…2c. About threefold slight thermal quenching of PL intensity observed for SN3 should not be surprising in comparison to the many orders of magnitude thermal quenching of pure a-Si:H [23], taking into account the substantially different E 0 ( % 310 meV) of SN3 and that ( % 60 meV) of a-Si:H. Two main results are that the PL peak wavelength blueshifts and the PL FWHM (DE PL ) broadens with increasing r. Keeping in mind the direct proportionality between r and E 04 (Fig. 1d), the blueshift of the PL band is plotted with respect to E 04 in Fig.…”

Extraordinary near-band-edge photoluminescence in the highly epitaxial ZnO films deposited by PLD

“…Thus, we can deal with the NBE PL behavior by a tailstate luminescence model for the study of amorphous semiconductor. According to Street [14] and Austin et al [15], the tailstate luminescence can be semi-empirically fitted by…”

Oxidation electronics: bond–band–barrier correlation and its applications

“…The shallow n-donor levels and the deeper p-acceptor levels are located within the initial band-gap (1.1 eV width) near to the band tails, which should narrow the gap, as observed. However, the luminescence peak of the a-Si:N:H compound moves to higher energy with increasing nitrogen concentration [446]. The broadened band-gap through nitridation could not be explained in terms of the traditional donor effect, though the nitrogen addition is always believed as n-type doping.…”