Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films

Anutgan, Mustafa; Anutgan, Tamila; Atilgan, Ismail; Katircioglu, B.

doi:10.1016/j.jlumin.2011.03.014

Cited by 23 publications

(14 citation statements)

References 28 publications

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“…However, it also turns out that N-rich nitride [2-4] and Si-rich nitride thin films containing amorphous [5-8] or crystalline [9-14] Si-np or without Si-np [15-18] can exhibit PL in the same spectral range. As a result, the mechanism of the PL in Si nitride is still a controversial subject in the literature.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical characterization of pure Si-rich nitride thin films

et al. 2013

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The specific dependence of the Si content on the structural and optical properties of O- and H-free Si-rich nitride (SiNx>1.33) thin films deposited by magnetron sputtering is investigated. A semiempirical relation between the composition and the refractive index was found. In the absence of Si-H, N-H, and Si-O vibration modes in the FTIR spectra, the transverse and longitudinal optical (TO-LO) Si-N stretching pair modes could be unambiguously identified using the Berreman effect. With increasing Si content, the LO and the TO bands shifted to lower wavenumbers, and the LO band intensity dropped suggesting that the films became more disordered. Besides, the LO and the TO bands shifted to higher wavenumbers with increasing annealing temperature which may result from the phase separation between Si nanoparticles (Si-np) and the host medium. Indeed, XRD and Raman measurements showed that crystalline Si-np formed upon 1100°C annealing but only for SiNx<0.8. Besides, quantum confinement effects on the Raman peaks of crystalline Si-np, which were observed by HRTEM, were evidenced for Si-np average sizes between 3 and 6 nm. A contrario, visible photoluminescence (PL) was only observed for SiNx>0.9, demonstrating that this PL is not originating from confined states in crystalline Si-np. As an additional proof, the PL was quenched while crystalline Si-np could be formed by laser annealing. Besides, the PL cannot be explained neither by defect states in the bandgap nor by tail to tail recombination. The PL properties of SiNx>0.9 could be then due to a size effect of Si-np but having an amorphous phase.

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Section: Introductionmentioning

confidence: 99%

Structural and optical characterization of pure Si-rich nitride thin films

et al. 2013

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“…In Figure 9, the thermal quenching of the integrated EL intensity is given in comparison to that of the PL intensity previously measured from an intrinsic a-SiN x :H film produced under the same deposition condition of the intrinsic layer of the electroformed pin diode at hand [21]. The quenching data of EL and PL were matched in order to compare their slopes.…”

Section: Thermal Quenching Of El and Pl Intensitiesmentioning

confidence: 95%

“…Note that the doping conditions of the p + and n + nc-Si:H layers were optimized previously [19,20], while the optical absorption and recombination properties of the intrinsic a-SiN x :H layer (x = 0.94) were studied in detail elsewhere [21]. The corresponding growth parameters are summarized in Table 1.…”

Section: Experimental Details 21 Fabrication Of the Fresh Diodesmentioning

confidence: 99%

“…Still, the exponential behaviour may be assumed as a convolution of all possible bond distortions from the band edge (most probable) toward deeper energies (less probable). Accordingly, E 0 of the a-SiN x :H layer of the diodes at hand previously found to be around 180 meV (see Table 2 and [21]) is taken as 400 meV (Figure 4(b)) after electroforming in order to fit the calculated and the measured σ values (see Figure 4(e)).…”

Section: Before Electroformingmentioning

confidence: 99%

“…Thermal quenching of the integrated EL intensity compared with that of the integrated PL intensity measured from an a-SiN x :H film identical to the intrinsic layer of the diode at hand. PL data are after [21].…”

Section: Thermal Quenching Of El and Pl Intensitiesmentioning

confidence: 99%

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Transport and luminescence phenomena in electroformed silicon nitride-based light emitting diode

Anutgan

Atilgan

et al. 2013

Philosophical Magazine

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Hydrogenated amorphous silicon nitride-based heterojunction pin diode was electroformed under sufficiently high forward bias stress leading to its instant nanocrystallization at room temperature. In order to investigate the origin of the accompanying bright visible light emission, current-voltage and electroluminescence (EL) characteristics of the electroformed diode were scanned over temperature. Electrical transport mechanism was analysed in the low, medium and high electric field regimes. Temperature and field dependence of thermal activation energy were discussed. EL characteristics were studied using the spectral energy distribution and the injection current dependence of its intensity. Thermal quenching data of EL and photoluminescence intensities were compared. Finally, the relationship between the electrical transport and luminescence phenomena was attempted to be interpreted within the frame of a self-consistent model.

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A Study of Temperature‐Dependent Photoluminescence from As‐Deposited and Heavy‐Ion‐Irradiated Plasma‐Enhanced Chemical Vapor Deposition‐Grown Si‐Rich a‐SiN_x:H Thin Films

Gupta

Plantevin

Bommali

et al. 2019

Physica Status Solidi (b)

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Temperature-dependent photoluminescence (PL) measurements in the range of 10-300 K are carried out on silicon-rich hydrogenated silicon nitride films deposited by plasma-enhanced chemical vapor deposition. The in situ formation of Si quantum dots (QDs) with an average size of 3.5 nm is observed. The composition of thin films is estimated by Rutherford backscattering and ellipsometry. Broad PL spectra from thin films are decomposed into contributions from Si QDs, N dangling bonds (DBs), and Si DBs (K-centers). At a low temperature, a strong PL can be observed, its quenching with increase in temperature is explained by the thermal activation of nonradiative decay mechanisms. Further, temperature-dependent PL for swift heavy-ion-irradiated films shows similar quenching with increase in temperature. However, the effect of irradiation on the luminescence mechanisms of a-SiN x :H is revealed at low temperatures (<120 K) only, whereby a relatively narrow peak around 2.0 eV emerges. These results clearly show the role of radiative defects in the luminescence from Si-rich silicon nitride.

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Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films

Cited by 23 publications

References 28 publications

Structural and optical characterization of pure Si-rich nitride thin films

Structural and optical characterization of pure Si-rich nitride thin films

Transport and luminescence phenomena in electroformed silicon nitride-based light emitting diode

A Study of Temperature‐Dependent Photoluminescence from As‐Deposited and Heavy‐Ion‐Irradiated Plasma‐Enhanced Chemical Vapor Deposition‐Grown Si‐Rich a‐SiN_x:H Thin Films

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Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films

Cited by 23 publications

References 28 publications

Structural and optical characterization of pure Si-rich nitride thin films

Structural and optical characterization of pure Si-rich nitride thin films

Transport and luminescence phenomena in electroformed silicon nitride-based light emitting diode

A Study of Temperature‐Dependent Photoluminescence from As‐Deposited and Heavy‐Ion‐Irradiated Plasma‐Enhanced Chemical Vapor Deposition‐Grown Si‐Rich a‐SiNx:H Thin Films

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A Study of Temperature‐Dependent Photoluminescence from As‐Deposited and Heavy‐Ion‐Irradiated Plasma‐Enhanced Chemical Vapor Deposition‐Grown Si‐Rich a‐SiN_x:H Thin Films