Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs

Marzin, J. Y.; Gérard, Jean‐Michel; Izraël, A.; Barrier, D.; Bastard, G.

doi:10.1103/physrevlett.73.716

Cited by 1,084 publications

(441 citation statements)

References 19 publications

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“…Sub-µm mesa patterns are processed on the sample surface in order to isolate single QDs [17]. The QDs studied in this paper come from the same wafer as in Ref.…”

mentioning

confidence: 99%

Temperature dependence of the zero-phonon linewidth in quantum dots: An effect of the fluctuating environment

et al. 2007

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“…Sub-µm mesa patterns are processed on the sample surface in order to isolate single QDs [17]. The QDs studied in this paper come from the same wafer as in Ref.…”

mentioning

confidence: 99%

Temperature dependence of the zero-phonon linewidth in quantum dots: An effect of the fluctuating environment

et al. 2007

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“…Similarly, the optical excitation of a single quantum dot ͑QD͒ results in optical spectra reminiscent of atomic transitions with sharp and spectrally narrow lines. [3][4][5][6][7] The understanding of the complex optical spectra from single dots and their dependence on photoexcitation intensity is, however, still quite poor. The atomiclike lines in the spectra were found to exhibit intriguing red-and blue-shifts, and new features are seen to appear and disappear depending on the number of injected electronhole pairs.…”

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confidence: 99%

Effects of few-particle interaction on the atomiclike levels of a single strain-induced quantum dot

et al. 2000

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“…[9][10][11] However, (In,Ga)As QDs grown on InP substrates with double-cap procedure have been reported as deterministic single photon sources (DSPs) at 1.55 m. [12][13][14] Recently, K. Takemoto et al reported the inclusion of QDs into 22-tapered cones to avoid the backward propagation of emitted photons.…”

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confidence: 99%

Fabrication of Metal Embedded Nano-Cones for Single Quantum Dot Emission

Huh¹,

Hermannstädter²,

Akahane³

et al. 2011

Jpn. J. Appl. Phys.

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High efficiency in the extraction, transmission and detection of single and entangled photons is one of the most significant factors to provide general usage and to suppress the bit-error rate in optical communication networks. We propose and realize metal embedded nanostructures with quantum dots (QDs) as photon sources to meet these challenges on the emitter side. Advantages of the process are the ability of fast nanometer-scale fabrication and the high reproducibility and yield. Mesas with typical taper angles of 20-30° and diameters between 100 nm and 1 µm were produced; these nano-structures are referred to as "cones" in this work. The dependence of the taper angle on the composition of the etched cone material is discussed, focusing on the contribution of Indium. The nano-cones used as photon sources were embedded in highly reflective metal and turned upside down to provide efficient and partly directed photon extraction. We present the selection of 1.35 µm photons emitted from a single QD as a result of embedding only a small number of dots in a nanometer sized cone.

show abstract

Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs

Cited by 1,084 publications

References 19 publications

Temperature dependence of the zero-phonon linewidth in quantum dots: An effect of the fluctuating environment

Temperature dependence of the zero-phonon linewidth in quantum dots: An effect of the fluctuating environment

Effects of few-particle interaction on the atomiclike levels of a single strain-induced quantum dot

Fabrication of Metal Embedded Nano-Cones for Single Quantum Dot Emission

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