Fabrication of Metal Embedded Nano-Cones for Single Quantum Dot Emission

Abstract

High efficiency in the extraction, transmission and detection of single and entangled photons is one of the most significant factors to provide general usage and to suppress the bit-error rate in optical communication networks. We propose and realize metal embedded nanostructures with quantum dots (QDs) as photon sources to meet these challenges on the emitter side. Advantages of the process are the ability of fast nanometer-scale fabrication and the high reproducibility and yield. Mesas with typical taper angles of 20-30° and diameters between 100 nm and 1 µm were produced; these nano-structures are referred to as "cones" in this work. The dependence of the taper angle on the composition of the etched cone material is discussed, focusing on the contribution of Indium. The nano-cones used as photon sources were embedded in highly reflective metal and turned upside down to provide efficient and partly directed photon extraction. We present the selection of 1.35 µm photons emitted from a single QD as a result of embedding only a small number of dots in a nanometer sized cone.

High‐Efficiency, High‐Power AlGaInP Thin‐Film LEDs with Micron‐Sized Truncated Cones as Light‐Extraction Structures

“…Next, truncated cones arranged in a triangular lattice configuration with a period of 1.2 μm were formed on the surface of the n‐(Al 0.5 Ga 0.5 ) 0.5 In 0.5 P layer exposed between the n‐electrode fingers by inductively coupled plasma (ICP) etching. The ICP etching was performed at room temperature by using a mixture of chlorine and argon as the etching gas . A thin SiO 2 layer (≈120 nm) was then deposited on the wafer surface by magnetron sputtering as a passivation layer.…”

Inter-dot coupling and excitation transfer mechanisms of telecommunication band InAs quantum dots at elevated temperatures

“…After the deposition of a thin insulating layer (10 − 60 nm SiO 2 or Si 3 N 4 ), the nano-cones were embedded in metal (Titanium (Ti) or Silver (Ag)). In the subsequent step, the InP substrate was removed and the sample was turned upside down, which is highlighted in the schematic illustration and scanning electron microscope (SEM) top view image in figure 1 (b) and (d) (more details on the fabrication are presented in Huh, et al [24]). In the further text the diameter of the QD containing plane, d QD , of the nano-cones is given when nano-cone sizes are specified.…”

Respuesta óptica lineal de un punto cuántico cónico en el régimen de Born-Markov

“…2021 Enero/Junio; 25(1): 31-38 te para una caracterización adecuada (Melnik, 2003). Los QDs de alta densidad (alrededor de 10 por cm) crecidos en sustratos InP se adaptan a las longitudes de onda de emisión superiores a 1.3 m. Usando estas muestras, se han fabricado conos submicrométricos de tamaño micrométrico, que contienen un pequeño número de QDs (Huh, 2011). En el marco de la aproximación adiabática, se han investigado los estados de energía electrónica y la absorción directa de luz en un CQD de GaAs, obtienendo expresiones analíticas para el espectro de energía y la dependencia del borde de absorción como función de los parámetros geométricos del CQD (Hayrapetyan D. B., 2015).…”