Photoluminescence of Mn-, Cr-doped and undoped ϵ-GaSe

Chung, Chae-Heon; Hahn, Suk‐Ryong; Park, H.L.; Kim, W.T.; Lee, S.I.

doi:10.1016/0022-2313(88)90255-4

Cited by 14 publications

(4 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1. Also, the two intrinsic emission lines show a similar behavior in their relative intensity to the intrinsic emission lines observed in Cr (0.05 mol%)-doped GaSe [8].…”

Section: Photoluminescence Spectrasupporting

confidence: 62%

“…However, the U-emission lines could not be assigned on the basis of group theoretical consideration [16]. It is not clear that whether the emission peaks are associated with Tm related defects as in the case of Mn-and Cr-doped GaSe [8] or the other levels of Tm 3þ ions. The observed emission peaks and their energies are summarized in Table 1.…”

Section: Photoluminescence Spectramentioning

confidence: 99%

“…This is due to the fact that the atoms of transition-metal elements produce sensitizing and luminescent centers in the forbidden gap of this compound. Optical studies have been made on photoluminescence [6][7][8] of Mn-and Cr-doped GaSe and on the excitonic emission [9] and thermodepolarization [10] of Co-doped GaSe. The miscibility gap of Cr 3þ in GaSe has been investigated [11].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Optical properties of Tm-doped GaSe single crystals

Kim

Jang

Lee

2004

Solid State Communications

View full text Add to dashboard Cite

“…1. Also, the two intrinsic emission lines show a similar behavior in their relative intensity to the intrinsic emission lines observed in Cr (0.05 mol%)-doped GaSe [8].…”

Section: Photoluminescence Spectrasupporting

confidence: 62%

Section: Photoluminescence Spectramentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optical properties of Tm-doped GaSe single crystals

Kim

Jang

Lee

2004

Solid State Communications

View full text Add to dashboard Cite

“…Recombination luminescence from lower lying states has been observed and attributed to impurities and defects as well as band to band recombination. Numerous studies of photoluminescence in GaSe with impurity levels such as Li [18], Cu [19], Mn [20,2l], Cr [22], Zn [23], Cd [24], Ag [25] and even Tm [26] have been conducted to name a few. Impurity levels in other binary III-VI chalcogenides such as InSe [27,28] have also been studied using photoluminescence techniques.…”

mentioning

confidence: 99%

Defect Luminescence in Some Layered Binary Chalcogenide Semiconductors

Aydınlı

Gasanly²

2002

DDF

View full text Add to dashboard Cite

A number of semiconductors such as GaS, GaSe, GaSSe show layered structure where intralayer bonding is strong and interlayer bonding quite weak. With bandgaps mostly in the visible and the near infrared and high crystal structure anisotropy, such semiconductors olfer interesting possibilities for optoelectronic applications In this review, we will summarize the recent developments on the photoluminescent properties of these materials such as luminescence due to donor-acceptor pair recombination. As these materials are undoped, the observed photoluminescence is attributed mostly to defect states present in these materials. InroductionLayered semiconductors have attracted much attention due to their structural properties and possible optical applications [1]. Elements of the group III-VI allow for a number of binary and ternary compounds such as GaS, GaSe, TlInSz, GaSexSI.x that crystallize in a layered structure. The layered structure contains a number of alternating layers whose number within the unit cell can be more than one. A good example is GaS where each layer is composed of four atoms stacked along the c axis of a hexagonal structure with a repeating unit of S-Ga-Ga-S and there are two layers in the unit cell [2]. GaS crystallizes in the so called ,B-polytype and carries the symmetry properties of the D2,, space group. Intralayer forces are primarily ionic-covalent, while the interlayer interactions are dominated by van der Waals forces. Due to weak interlayer interaction these materials are easily cleaved along these layers. Likewise, GaSe crystallizes in a hexagonal structure [3] however, depending on the stacking sequences exhibit four modifications labeled; 8, B, y, and 6-polytypes. The e and B are 2H hexagonal type while y and 6 are 3R trigonal type. The 3prevalence of a particular polytype is a fimction of growth techniques. Solid solutions of A -B6X-C61.x have typically been observed to display layered structures with the polytype of the binary parent compound dominating that of the mixed crystal for values of x close to that of the binary compound . Mixed polytypes have also been observed for a narrow range of x values For example, in the case of GaSe1.x, polytype a has been observed for x<0.01, a mixture of polytypes e and y for 0.0l

show abstract