Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy

Abstract

Infrared photoluminescence (PL) from InSb, InAs, and InAs1−xSbx (x<0.3) epitaxial layers grown by atmospheric pressure organometallic vapor phase epitaxy has been investigated for the first time over an extended temperature range. The values of full width at half maximum of the PL peaks show that the epitaxial layer quality is comparable to that grown by molecular-beam epitaxy. The observed small peak shift with temperature for most InAs1−xSbx epilayers may be explained by wave-vector-nonconserving transitions involved in the PL emission. For comparison, PL spectra from InSb/InSb and InAs/InAs show that the wave-vector-conserving mechanism is responsible for the PL emission. The temperature dependence of the energy band gaps, Eg, in InSb and InAs is shown to follow Varshni’s equation Eg(T)=Eg0−αT2/ (T+β). The empirical constants are calculated to be Eg0=235 meV, α=0.270 meV/K, and β=106 K for InSb and Eg0=415 meV, α=0.276 meV/K, and β=83 K for InAs.

Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE

“…In Figure 3 we present the temperature dependence of the QD1 and QD2 transition energies (full circles and open circles, respectively) of the same 1/0 structure. The first is shown to be intermediate between the temperature dependence of the InAs band gap [14] (solid line) and the GaAs one [15] (dotted line), which have been shifted in energy to facilitate the comparison. As shown in reference [1] the InAs and GaAs bandgaps are expected to be the limiting behaviour for large and small QDs.…”

High-Gain InAs Avalanche Photodiodes

“…To investigate the origin of smaller gain at 77 K, Monte Carlo simulations were performed. Equation 2 [18] was used to model the temperature dependence of the InAs band-gap. The energies of the L and X minima, E L and E X , respectively, are assumed to have the same temperature dependence as that of the conduction band minimum, E [17].…”

Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry

“…The band parameters of InAs and InAsSb are taken from literature, [20][21][22] the effects of strain are accounted for using the Pikus-Bir Hamiltonian, 23 and the superlattice miniband energies and wavefunctions are calculated using a KronigPenney formalism. 24,25 Transition energies are calculated between electron and hole minibands based on crystal momentum conservation, and the electron-hole wavefunction overlap integral indicates which transitions are strongly active in absorption.…”