High-Gain InAs Avalanche Photodiodes

Abstract

Abstract-

Low dark current P- InAsSbP /n- InAs/N-InAsSbP/n + - InAs double heterostructure back-side illuminated photodiodes

“…This conclusion is supported by the fact that the 60 K photocurrent induced by the LED30Sr illumination was almost independent on V bias indicating low avalanche multiplication probability for holes in n-InAs. The latter agrees with the recent evaluation of low value of the hole ionization coefficient in InAs [6][7][8].…”

“…This decreases specific detectivity D ⁄ at low temperatures when bulk current is low [5][6][7][8]. That's why several passivation techniques including coating with SU-8 photoresist [6][7][8] and sulphidation treatment [9] have been already suggested in order to suppress surface leakage and to increase the zero bias resistance area product R 0 A. On the other hand several publications outlined that creation of P-InAsSbP/nInAs/N-InAsSbP double heterostructures (DH) increases R 0 A product and decreases reverse current at high bias with respect to homo InAs and single heterojunctions with no n-InAs/N-InAsSbP interface (see e.g.…”

HgCdTe e-avalanche photodiode detector arrays

“…The grading in composition results in variation of absorption coefficients, band gap and carrier concentration and leads to a significant change of diode characteristics. [27][28][29][30][31] Built in electric field due to grading in energy band gap reduces the effect of imperfect CdZnTe/HgCdTe interface having high dislocation density. Incoming photons are absorbed away from the substrate and close to the junction creating electron-hole pairs that diffuse and drift toward the depletion region.…”

Heavily Si-doped InAs photoluminescence measurements

“…Contrary to the other III-V materials, such as antimony compounds, InAs devices may operate at room temperature [4], which in turn, leads to the reduction of photodetector cost. Most of InAs photodiode heterostructures consist of undoped absorber and contacts made of p-type and strong n-type (1 × 10 18 cm −3 ) materials [5][6][7][8]. InAs of both p-type and n-type have been already studied in many works [9][10][11].…”