HgCdTe e-avalanche photodiode detector arrays

Singh, Anand; Shukla, Anupam; Pal, R.

doi:10.1063/1.4929773

Cited by 9 publications

(5 citation statements)

References 33 publications

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“…These conditions are met by HgCdTe since the bandgap can be tuned to the particular requirement. HgCdTe APDs show a close to linear exponential gain up to M ~ 1000 with very low excess noise, close to F ( M ) ~ 1 [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ] in short-wave (SWIR) mid-wave infrared (MWIR) to long-wave infrared (LWIR) covering niche strategic applications from 1.3 μm to 16 μm. Asymmetry between the effective mass of electron in the conduction band and heavy hole results in the unequal ionization coefficient for electron and hole in HgCdTe material.…”

Section: Introductionmentioning

confidence: 78%

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Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm

Kopytko

Sobieski

Gawron

et al. 2022

Sensors

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The trend related to reach the high operating temperature condition (HOT, temperature, T > 190 K) achieved by thermoelectric (TE) coolers has been observed in infrared (IR) technology recently. That is directly related to the attempts to reduce the IR detector size, weight, and power dissipation (SWaP) conditions. The room temperature avalanche photodiodes technology is well developed in short IR range (SWIR) while devices operating in mid-wavelength (MWIR) and long-wavelength (LWIR) require cooling to suppress dark current due to the low energy bandgap. The paper presents research on the potential application of the HgCdTe (100) oriented and HgCdTe (111)B heterostructures grown by metal-organic chemical vapor deposition (MOCVD) on GaAs substrates for the design of avalanche photodiodes (APDs) operating in the IR range up to 8 µm and under 2-stage TE cooling (T = 230 K). While HgCdTe band structure with molar composition xCd < 0.5 provides a very favorable hole-to-electron ionization coefficient ratio under avalanche conditions, resulting in increased gain without generating excess noise, the low level of background doping concentration and a low number of defects in the active layer is also required. HgCdTe (100) oriented layers exhibit better crystalline quality than HgCdTe (111)B grown on GaAs substrates, low dislocation density, and reduction of residual defects which contribute to a background doping within the range ~1014 cm–3. The fitting to the experimentally measured dark currents (at T = 230 K) of the N+-ν-p-P+ photodiodes commonly used as an APDs structure allowed to determine the material parameters. Experimentally extracted the mid-bandgap trap concentrations at the level of 2.5 × 1014 cm−3 and 1 × 1015 cm−3 for HgCdTe (100) and HgCdTe (111)B photodiode are reported respectively. HgCdTe (100) is better to provide high resistance, and consequently sufficient strength and uniform electric field distribution, as well as to avoid the tunneling current contribution at higher bias, which is a key issue in the proper operation of avalanche photodiodes. It was presented that HgCdTe (100) based N+-ν-p-P+ gain, M > 100 could be reached for reverse voltage > 5 V and excess noise factor F(M) assumes: 2.25 (active layer, xCd = 0.22, k = 0.04, M = 10) for λcut-off = 8 μm and T = 230 K. In addition the 4-TE cooled, 8 μm APDs performance was compared to the state-of-the-art for SWIR and MWIR APDs based mainly on III-V and HgCdTe materials (T = 77–300 K).

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Section: Introductionmentioning

confidence: 78%

“…In addition, HgCdTe based APD operates at a low reverse bias to achieve large internal gain ( M ) with low excess noise factor [ F ( M )] rather than III-V material based APD. However, the highest performance is obtained at low cryogenic temperatures ( T = 77 K) [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ].…”

Section: Introductionmentioning

confidence: 99%

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm

Kopytko

Sobieski

Gawron

et al. 2022

Sensors

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“…HgCdTe Infrared Focal Plane Array (IRFPA) detectors have been widely used in infrared night vision, remote sensing, sky observation and environmental monitoring, etc [1][2][3][4][5][6][7] . With the development of IRFPA detector technology, the number of pixels has increased from a few hundred to several million.…”

Section: Introductionmentioning

confidence: 99%

Research on the contamination failure mechanism of HgCdTe IRFPA detectors

Liu,

YAN,

LIAO

et al. 2023

Third International Computing Imaging Conference (CITA 2023)

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HgCdTe infrared focal plane array imaging detectors have been widely used in a variety of fields such as night vision surveillance, remote sensing mapping and astronomical observation. In recent years, with the development of semiconductor manufacturing processes, the array size of HgCdTe IR focal plane array imaging detectors has gradually increased, and the preparation process has become increasingly complex. During the preparation process, impurity ions can enter the HgCdTe material and cause degradation of device performance or even device failure. This work investigates the distribution of impurity elements in HgCdTe IR focal plane array detectors prepared by both processes and the mechanism by which impurity elements cause device failure.

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“…These disturbing effects can be avoided, in part, by employing graded alloy compositions. Here, the capability to produce nanostructures with intentional composition gradings is a particular strength of the LPE, − facilitating the fine-tuning of the electronic properties together with a significant increase in the crystal quality.…”

Section: Introductionmentioning

confidence: 99%

Nucleation Chronology and Electronic Properties of InAs_1–x–ySb_xP_y Graded Composition Quantum Dots Grown on an InAs(100) Substrate

Gambaryan

Boeck

Trampert

et al. 2020

ACS Appl. Electron. Mater.

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We provide a detailed study of nucleation process, characterization, and electronic and optical properties of graded composition quantum dots (GCQDs) grown from the In-As-Sb-P composition liquid phase on an InAs(100) substrate in the Stranski–Krastanov growth mode. Our GCQDs exhibit diameters from 10 to 120 nm and heights from 2 to 20 nm with segregation profiles having a maximum Sb content of approximately 20% at the top and a maximum P content of approximately 15% at the bottom of the GCQDs so that hole confinement is expected in the upper parts of the GCQDs. Using an eight-band k·p model taking strain and built-in electrostatic potentials into account, we have computed the hole ground-state energies and charge densities for a wide range of InAs1–x–y Sb x P y GCQDs as close as possible to the systems observed in the experiment. Finally, we have obtained an absorption spectrum for an ensemble of GCQDs by combining data from both the experiment and theory. Excellent agreement between measured and simulated absorption spectra indicates that such GCQDs can be grown following a theory-guided design for application in specific devices.

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HgCdTe e-avalanche photodiode detector arrays

Cited by 9 publications

References 33 publications

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm

Research on the contamination failure mechanism of HgCdTe IRFPA detectors

Nucleation Chronology and Electronic Properties of InAs_1–x–ySb_xP_y Graded Composition Quantum Dots Grown on an InAs(100) Substrate

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HgCdTe e-avalanche photodiode detector arrays

Cited by 9 publications

References 33 publications

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm

Research on the contamination failure mechanism of HgCdTe IRFPA detectors

Nucleation Chronology and Electronic Properties of InAs1–x–ySbxPy Graded Composition Quantum Dots Grown on an InAs(100) Substrate

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Nucleation Chronology and Electronic Properties of InAs_1–x–ySb_xP_y Graded Composition Quantum Dots Grown on an InAs(100) Substrate