Photoluminescence of GaN epitaxial layers

Dai, R.; Fu, S. P.; Xie, Jingui; Fan, Guanghan; Hu, Guiqing; Schrey, H.; Klingshirn, C.

doi:10.1088/0022-3719/15/2/020

Cited by 28 publications

(18 citation statements)

References 14 publications

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“…Therefore one also has to consider structural defects to be responsible for the L1 -L4 lines. This could explain the observations in other publications where the 3.42 eV band vanished in the films of higher structural quality [4,6].…”

Section: Discussionsupporting

confidence: 78%

“…In thoses reports, however, no explanation could be given on the origin of this transition. In PL studies this transition has been found in GaN powder [2,5,7], single crystal needles [1], as well as in epitaxial films on sapphire (HVPE [4,6], MBE [3] and MOCVD [8]). The reported peak energy vary between 3.41 and 3.435 eV.…”

Section: Introductionmentioning

confidence: 87%

“…Sofar several characteristic luminescence bands have been described in GaN which can be attributed to one of the following: Transitions between shallow bound carriers in the vicinity of the bandgap, transitions in the blue-violet spectral range involving an acceptor level and a broad band in the yellow part of the visible spectrum of as yet unidentified origin. In addition a strong band centered around 3.42 eV is frequently observed in low temperature PL spectra of GaN [1][2][3][4][5][6][7][8]. Lying energetically between the transitions of shallow bound carriers and acceptor related transitions this band recently attracted considerable interest.…”

Section: Introductionmentioning

confidence: 99%

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Fine Structure of the 3.42 eV Emission Band in GaN

et al. 1995

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A luminescence band centered around 3.42 eV is commonly observed in GaN. Its appearance has been tentatively assigned to an oxygen donor level. Stimulated laser activity has also been reported at this energy. We present a study of this band in GaN grown by high temperature vapor phase epitaxy (HTVPE). The high quality of this material, with an excitonic line width as narrow as 3 meV, allows us to distingish four different peak positions of this luminescence band. They appear at 3.4066, 3.4121, 3.4186, and 3.4238 eV (T = 6 K). Within the experimental error the lines exhibit an equidistant spacing of 6 meV. They show a pressure behavior similar to shallow levels described by effective mass theory. We discuss our results in the context of incorporation of oxygen and structural defects in GaN.

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Section: Discussionsupporting

confidence: 78%

Section: Introductionmentioning

confidence: 87%

Section: Introductionmentioning

confidence: 99%

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Fine Structure of the 3.42 eV Emission Band in GaN

et al. 1995

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“…Similar features have also been observed in materials apparently containing no GaN at all. These lines may therefore be connected with an unknown localized defect level [20]. As stated above we have observed the same spectra for a GaAs layer with doping concentra-tion of nitrogen, where there is unlikely to be a GaNphase.…”

Section: Resultssupporting

confidence: 80%

Optical Properties of GaNAs Grown by MBE

Pozina

Ivanov

Ḿonemar

et al. 1998

MRS Internet j. nitride semicond. res.

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Optical properties of the GaNxAs1−x layers grown on (001) GaAs substrates by molecular beam epitaxy have been studied. The samples can be classified into three categories with respect to the concentration of N, as determined by x-ray diffraction and secondary-ion mass spectrometry: (i) with doping nitrogen concentration, (ii) with average content of N less than 30 %, and (iii) with x close to 100 %. From optical measurements of photoluminescence and Raman scattering, combined with analysis of x-ray diffraction spectra, different phases are observed in the GaNxAs1−x layers: GaAs, GaN and the solid ternary solution GaNxAs1−x. We have estimated the fundamental band-gap energy in the GaNxAs1−x alloy with low nitrogen concentration (up to x = 0.04) from absorption measurements, and in GaNxAs1−x with low arsenic concentration (up to 1−x = 0.04) - from photoluminescence spectra. An analysis of the dependence of the experimental values of the GaNxAs1−x band-gap energy on the nitrogen composition indicates a constant bowing parameter b as large as b = -18 eV.

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“…To our knowledge this phenomenon has not ever been reported. Some researchers observed a similar phenomenon in the band-to-band transition and the bound exciton in GaN [7,17]. Jiang et al observed that the emission peak of the band-to-band transition in GaN is added by 13 meV with decreasing excitation density.…”

Section: Resultsmentioning

confidence: 77%