Photoluminescence of Eu3+ ion in SnO2 obtained by sol–gel

Morais, Evandro Augusto de; Scalvi, Luís Vicente de Andrade; Tabata, A.; Oliveira, José Brás Barreto de; Ribeiro, Sidney J. L.

doi:10.1007/s10853-007-1610-1

Cited by 65 publications

(60 citation statements)

References 17 publications

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“…While the increasing part of the dependence may be possible to explain by thermally induced energy level population dynamics, some thermally activated quenching mechanism must account for the decreasing part. Slightly less-pronounced quenching of Eu 3+ emission has been previously reported by Morais et al [8] who has compared 0.1 and 0.5 at% Eu-doped samples and achieved stronger quenching with higher doping. Therefore the quenching might be connected to energy migration among Eu 3+ ions and energy transfer to quenching centers, especially surface defects in nanophase [26].…”

Section: Resultsmentioning

confidence: 49%

“…While a number of papers concerning the photoluminescence (PL) of SnO 2 :Eu have been published [7][8][9][10], consideration of the application potential of the material and possible reasons limiting its luminescence performance is still missing. Hereby, we have carried out a systematic investigation of sol-gel-prepared SnO 2 :Eu while also studying the influence of antimony co-dopant, which is one of the main impurities used for improving the electrical conductivity of stannia [1].…”

Section: Introductionmentioning

confidence: 99%

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Structural and luminescence characteristics of SnO2:Eu and SnO2:Eu,Sb nanophosphors upon annealing at high temperatures

Kiisk

Kangur

Paalo

et al. 2011

Materials Chemistry and Physics

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The paper explores the structure and luminescence of sol-gel-derived SnO 2 :Eu and SnO 2 :Eu,Sb nanopowders which may be useful as electrically conductive phosphors. The samples were sintered in air at temperatures reaching up to 1400°C. Raman-, SEM-, EDX-and photoluminescence characterization of the samples was carried out.High-temperature annealing of SnO 2 :Eu leads to a nanoparticulate phosphor with considerable efficiency of host-sensitized Eu 3+ emission under UV excitation although the emission is slightly quenched at room temperature. While Sb co-dopant immensely improves crystallization at 1400°C, it also impairs luminescence performance. SEM and EDX characterization suggest pronounced segregation of Eu induced by the enhanced crystal growth. Interestingly, Sb-doping seems to activate in the Raman spectrum quite a few SnO 2 vibrations which are normally rather weak or IR active.

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Section: Resultsmentioning

confidence: 49%

Section: Introductionmentioning

confidence: 99%

Structural and luminescence characteristics of SnO2:Eu and SnO2:Eu,Sb nanophosphors upon annealing at high temperatures

Kiisk

Kangur

Paalo

et al. 2011

Materials Chemistry and Physics

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“…In this case, the final annealing was for 150 • C for 1 h, a procedure that does not damage the GaAs bottom layer. The deposition of the Eu 3+ -doped SnO 2 thin film layer has been described in detail elsewhere [7]. The deposition also took place in an air atmosphere (room temperature), and samples, after each layer, are dried in air for 20 min and treated at 200 • C for 10 min in the same oven used for GaAs annealing.…”

Section: Synthesis Of Heterostructurementioning

confidence: 99%

Photoluminescence of Rare-Earth Ions in the Nanocrystalline GaAs/SnO2 Heterostructure and the Photoinduced Electrical Properties Related to the Interface

2017

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Deposition of an SnO 2 thin film was carried out by sol-gel-dip-coating and doped with Ce 3+ or Eu 3+ , and a GaAs layer was deposited by resistive evaporation or sputtering. This investigation combines the emission properties of these rare-earth ions with the unique transport properties generated by the heterostructure assembly. Illumination with light with energy above the GaAs bandgap and below the SnO 2 bandgap drastically increases the GaAs/SnO 2 heterostructure conductance, which becomes practically temperature-independent. This was associated with the presence of interface conduction, possibly a two-dimensional electron gas at the GaAs/SnO 2 interface. This feature takes place only for the sample where the GaAs bottom layer is deposited via sputtering. Irradiation with energies above the SnO 2 bandgap only excites the top oxide layer. The heterostructure assembly GaAs/SnO 2 :Eu leads to emission from Eu 3+ , unlike SnO 2 deposition directly on a glass substrate, where the Eu 3+ transitions are absent. Eu emission comes along a broad band, located at a higher energy compared to Eu 3+ transitions, which are blue-shifted as the thermal annealing temperature increases. Luminescence from Ce 3+ ions in the heterostructure can be detected, but the ions overlap with emission from the matrix, and a cleaning procedure helps to identify Ce 3+ transitions.

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“…The Eu-doped matrix SnO 2 presents two types of Eu 3+ incorporation: at symmetry sites, substitutional to Sn 4+ , or at asymmetric sites, at particles surface, due to doping segregation 6 . In both cases the luminescent properties characteristics are in the range 570-720 nm [7] .…”

Section: +mentioning

confidence: 99%