Photoluminescence of Er-doped Si-SiO2 and Al–Si-SiO2 sputtered thin films

Rozo, C.; Fonseca, Luis F.; Jaque, Daniel; Solé, J. Garcı́a

doi:10.1016/j.jlumin.2007.11.029

Cited by 5 publications

(5 citation statements)

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“…For B5 this was estimated to be $9 Â 10 À17 cm 2 [53], in agreement with other calculated values [20], and for F3 it was estimated to be $9 Â 10 À18 cm 2 [21]. By comparing the emission 4 I 13/2 -4 I 15/2 spectrum of G6 with those of B5 and F3 as shown in Fig.…”

Section: Article In Presssupporting

confidence: 87%

“…It was already mentioned [21,36] that the Er ions in the FX samples are excited both by the defects and by the Si np present in these films. Nonradiative energy transfer from the ZrO 2 host to RE ions has been previously reported [34,53]. For the FX and GX samples this nonradiative energy transfer from the host comes from the defects; in this case we have to mention the V-type center (holes trapped at an oxygen ion adjacent to a cation vacancy) defects in YSZ [35], which have an absorption band around 465 nm and are excited when using the 457.9 nm laser line.…”

Section: Article In Pressmentioning

confidence: 81%

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Luminescence of Er-doped silicon oxide–zirconia thin films

Rozo

Fonseca

Jaque

et al. 2009

Journal of Luminescence

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Section: Article In Presssupporting

confidence: 87%

Section: Article In Pressmentioning

confidence: 81%

Luminescence of Er-doped silicon oxide–zirconia thin films

Rozo

Fonseca

Jaque

et al. 2009

Journal of Luminescence

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“…The development of optoelectronic devices is largely dependent on advances in thin-film deposition technology. Techniques employed to achieve the deposition of lanthanidedoped upconversion thin films can be broadly classified into chemical vapor deposition and physical vapor deposition, including sputtering [36,37], pulsed-laser deposition (PLD) [38][39][40][41][42], molecular beam epitaxy (MBE) [43,44], sol-gel procedure [45][46][47], thermal evaporation [48], and atomic layer deposition (ALD) [49]. Luminescent materials based on thin films have several advantages over conventional nanocrystals in optoelectronic applications such as excellent thermal stability and outstanding adhesion to solid substrates.…”

Section: Thin Filmsmentioning

confidence: 99%

Lanthanide-doped upconversion materials: emerging applications for photovoltaics and photocatalysis

et al. 2014

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Photovoltaics and photocatalysis are two significant applications of clean and sustainable solar energy, albeit constrained by their inability to harvest the infrared spectrum of solar radiation. Lanthanide-doped materials are particularly promising in this regard, with tunable absorption in the infrared region and the ability to convert the long-wavelength excitation into shorter-wavelength light output through an upconversion process. In this review, we highlight the emerging applications of lanthanide-doped upconversion materials in the areas of photovoltaics and photocatalysis. We attempt to elucidate the fundamental physical principles that govern the energy conversion by the upconversion materials. In addition, we intend to draw attention to recent technologies in upconversion nanomaterials integrated with photovoltaic and photocatalytic devices. This review also provides a useful guide to materials synthesis and optoelectronic device fabrication based on lanthanide-doped upconversion materials.

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“…The emission properties depend not only on ZnO host structures such as nanoparticles, nanocrystals, nanorods, films, but also on impurities in the host such as Li [10], Ti, Co, Ni, Mn, Fe [6] etc. Enhancement of Er luminescence from the Er-doped Al-Si-SiO 2 thin films [11] has been studied. Red lighting Eu 3+ and green lighting Tb 3+ ions are often doped in the ZnO materials.…”

Section: Introductionmentioning

confidence: 99%

Effects of Codoping Al³⁺ on Luminescence of ZnO: Eu and ZnO:Tb Thin-Films

Wang

Zhang

et al. 2013

Integrated Ferroelectrics

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Rare-earth (RE = Eu, Tb) doped ZnO and Al-codopedZnO:RE films on silicon wafers were prepared by sol-gel techniques and subsequently annealed in argon ambient. The films were characterized by photoluminescence spectroscope, Raman spectroscope and scanning electron microscope. When doped with RE only, the most intense lines of RE emissions were observed in ZnO nanofilms doped with RE at a concentration of 1%. Alcodoping into the ZnO:RE nanofilms could obviously improve the efficiencies of the RE emissions. The RE emission intensities depended on Al concentration. The improvement of the RE emissions could be attributed to the defects and crystallizations caused by Al codoping in the ZnO:RE nanofilms.

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Photoluminescence of Er-doped Si-SiO2 and Al–Si-SiO2 sputtered thin films

Cited by 5 publications

References 10 publications

Luminescence of Er-doped silicon oxide–zirconia thin films

Luminescence of Er-doped silicon oxide–zirconia thin films

Lanthanide-doped upconversion materials: emerging applications for photovoltaics and photocatalysis

Effects of Codoping Al³⁺ on Luminescence of ZnO: Eu and ZnO:Tb Thin-Films

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Photoluminescence of Er-doped Si-SiO2 and Al–Si-SiO2 sputtered thin films

Cited by 5 publications

References 10 publications

Luminescence of Er-doped silicon oxide–zirconia thin films

Luminescence of Er-doped silicon oxide–zirconia thin films

Lanthanide-doped upconversion materials: emerging applications for photovoltaics and photocatalysis

Effects of Codoping Al3+ on Luminescence of ZnO: Eu and ZnO:Tb Thin-Films

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Effects of Codoping Al³⁺ on Luminescence of ZnO: Eu and ZnO:Tb Thin-Films