2009
DOI: 10.1016/j.jlumin.2009.02.003
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Luminescence of Er-doped silicon oxide–zirconia thin films

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Cited by 4 publications
(1 citation statement)
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“…The development of optoelectronic devices is largely dependent on advances in thin-film deposition technology. Techniques employed to achieve the deposition of lanthanidedoped upconversion thin films can be broadly classified into chemical vapor deposition and physical vapor deposition, including sputtering [36,37], pulsed-laser deposition (PLD) [38][39][40][41][42], molecular beam epitaxy (MBE) [43,44], sol-gel procedure [45][46][47], thermal evaporation [48], and atomic layer deposition (ALD) [49]. Luminescent materials based on thin films have several advantages over conventional nanocrystals in optoelectronic applications such as excellent thermal stability and outstanding adhesion to solid substrates.…”
Section: Thin Filmsmentioning
confidence: 99%
“…The development of optoelectronic devices is largely dependent on advances in thin-film deposition technology. Techniques employed to achieve the deposition of lanthanidedoped upconversion thin films can be broadly classified into chemical vapor deposition and physical vapor deposition, including sputtering [36,37], pulsed-laser deposition (PLD) [38][39][40][41][42], molecular beam epitaxy (MBE) [43,44], sol-gel procedure [45][46][47], thermal evaporation [48], and atomic layer deposition (ALD) [49]. Luminescent materials based on thin films have several advantages over conventional nanocrystals in optoelectronic applications such as excellent thermal stability and outstanding adhesion to solid substrates.…”
Section: Thin Filmsmentioning
confidence: 99%