Photoluminescence of CdIn2S4 single crystals

Grilli, E.; Guzzi, M.; Cappelletti, P.; Moskalonov, A. V.

doi:10.1002/pssa.2210500165

Cited by 7 publications

(2 citation statements)

References 10 publications

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“…31 The difference between the results for lower energies is mainly due to the fact that the energy bandgap from the calculations (2.00 eV) is lower than the value in Ref. 31. Although we only consider the direct optical transitions, our result compares well with the experimental result despite the bandgap being indirect.…”

Section: Electronic Structuresupporting

confidence: 48%

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Electronic, structural, and optical properties of the host and Cr-doped cadmium thioindate

Tablero

2012

Journal of Applied Physics

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Tunable bandgap and ferromagnetism in sputtered epitaxial Sn1−xMgxO2 thin films Appl. Phys. Lett. 101, 182406 (2012) Band alignment of vanadium oxide as an interlayer in a hafnium oxide-silicon gate stack structure J. Appl. Phys. 112, 084105 (2012) Electronic structure of Co-doped ZnO nanorods J. Appl. Phys. 112, 083112 (2012) Electronic structures and magnetism of diluted magnetic semiconductors Sn1−xGdxTe: A density functional theory study J. Appl. Phys. 112, 083720 (2012) Additional information on J. Appl. Phys.

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Section: Electronic Structuresupporting

confidence: 48%

“…In this figure, our results are compared graphically with other experimental result in the literature. 31 The difference between the results for lower energies is mainly due to the fact that the energy bandgap from the calculations (2.00 eV) is lower than the value in Ref. 31.…”

Section: Electronic Structurementioning

confidence: 71%

Electronic, structural, and optical properties of the host and Cr-doped cadmium thioindate

Tablero

2012

Journal of Applied Physics

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Photoluminescence of CdIn2S4 single crystals recombination process and localized levels

Grilli

Guzzi

Cappelletti

et al. 1980

Phys. Stat. Sol. (a)

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A detailed analysis of the excitation and recombination processes of the charge carriers in CdIn2S4 crystals is discussed. The luminescence spectra and the luminescence excitation spectra at temperatures ranging from liquid helium temperature to room temperature are presented; the effect of a secondary low energy radiation on luminescence is also discussed. Models are proposed for the excitation and recombination processes and a scheme of the levels localized in the gap of CdIn2S4. The two emission bands observed are attributed to an interimpurity recombination and to an electron transition between a donor level and the valence band, respectively; the presence of a non radiative recombination process is also proposed.

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Red Photoluminescence of α‐HgS Single Crystals

Soler

Aicardi

Leyris

1981

Physica Status Solidi (b)

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Cathodoluminescence measurements on cinnabar (a-HgS) published in a previous paper show that the emission peaked a t 1.9 eV obeys a vibronic mechanism. The purpose of the present paper is to complete this characterisation by photoluminescence and excitation measurements (shape of spectrum, kinetics, thermal quenching). These different results allow to calculate the configurational coordinate diagram and to determine its location in the gap. It is also pointed out the influence of the traps and the non-radiative centres revealed by measurements of photoconduction and thermal-stimulated current.Des mesures de cathodoluminescence sur le cinabre (cc-HgS) publi6es dans un article pr6cBdent nous ont montrc5 que 1'Bmission centr6e & 1,9 eV obBissait B un mecanisme vibronique. L'objet du prBsent article est de complBter cette caractBrisation par des expbriences de photoluminescence et d'excitation (forme des spectres, cinbtique, extinction thermique). Ces diffbrents rbsultats nous ont permis de calculer le diagramme de configuration et de le localiser dans la bande interdite. Nous signalons Bgalement l'influence des pibges et des centres non radiatifs mis en dvidence par photoconduction et courant thermostimul6.

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Photoluminescence of CdIn2S4 single crystals

Cited by 7 publications

References 10 publications

Electronic, structural, and optical properties of the host and Cr-doped cadmium thioindate

Electronic, structural, and optical properties of the host and Cr-doped cadmium thioindate

Photoluminescence of CdIn2S4 single crystals recombination process and localized levels

Red Photoluminescence of α‐HgS Single Crystals

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