Electronic, structural, and optical properties of the host and Cr-doped cadmium thioindate

Abstract

Tunable bandgap and ferromagnetism in sputtered epitaxial Sn1−xMgxO2 thin films Appl. Phys. Lett. 101, 182406 (2012) Band alignment of vanadium oxide as an interlayer in a hafnium oxide-silicon gate stack structure J. Appl. Phys. 112, 084105 (2012) Electronic structure of Co-doped ZnO nanorods J. Appl. Phys. 112, 083112 (2012) Electronic structures and magnetism of diluted magnetic semiconductors Sn1−xGdxTe: A density functional theory study J. Appl. Phys. 112, 083720 (2012) Additional information on J. Appl. Phys.

Photovoltaic application of the V, Cr and Mn-doped cadmium thioindate

“…There is general agreement that the bandgap of CdIn 2 S 4 is indirect [19,[22][23][24][25][26] and that the valence band (VB) maximum is not at the r (fc = 0) point but probably in the [110] direction [25,26]. A detailed study of the gap energy and of the direct or indirect character of the energy bandgap with the anion displacement parameter u has been done in reference [26].…”

“…A detailed study of the gap energy and of the direct or indirect character of the energy bandgap with the anion displacement parameter u has been done in reference [26]. We use the parameters in reference [26] for all supercells.…”

“…A detailed study of the gap energy and of the direct or indirect character of the energy bandgap with the anion displacement parameter u has been done in reference [26]. We use the parameters in reference [26] for all supercells. With these parameters and the same methodology, the results for the electronic and optical properties compare well with experimental and other data in the literature [26].…”

“…We use the parameters in reference [26] for all supercells. With these parameters and the same methodology, the results for the electronic and optical properties compare well with experimental and other data in the literature [26].…”