Photoluminescence of CdIn2S4 single crystals

Grilli, E.; Guzzi, M.; Moskalonov, A. V.

doi:10.1002/pssa.2210620220

Cited by 17 publications

(8 citation statements)

References 17 publications

(15 reference statements)

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“…As well, owing to the comparatively large acceptor binding energy, the capture cross section of ionized acceptors is likely to be larger than those of donors (22). Thus, free holes are captured by ionized acceptors before free electrons are captured by ionized donors, as long as both types of ionized impurities are present in similar concen- The luminescence band at 1.58 eV, observed in all the present spectra, has been reported in many previous studies (9,11,12,20) and has been attributed to the electron transition 3 from the trap distribution D to an unrelaxed acceptor level A,. The 1.68-eV structure can be assigned to the electron transition 2 from the conduction band to the same unrelaxed acceptor.…”

Section: Discussionsupporting

confidence: 74%

“…Photoluminescence (PL) (9)(10)(11)(12)(13)(14) and photoconductivity ( 1 5 -19) techniaues have been used for the detection and characterization of the high density of localized levels in the gap and the analysis of their nature and properties. In all the com-11 Ill VI pounds of stoichiometry A B, X, , the low-temperature intrinsically excited PL emission spectra display a wide band recently attributed to donor-acceptor pair recombination (1 1).…”

Section: Introductionmentioning

confidence: 99%

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Time-resolved photoluminescence in CdIn₂S₄

Charbonneau¹,

Fortin²,

Beauvais³

1987

Can. J. Phys.

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Photoluminescence spectra of CdlnzSa single crystals at 1.8 K under both continuous-wave (CW) and pulsed excitation were obtained. In the latter case, a variable time-window technique was used to observe the time evolution of the spectra between 0 and 100 FS. In contrast to previous studies, four spectral bands were observed under both CW and pulsed, intrinsic or extrinsic excitation. In particular, two bands previously unobserved under extrinsic excitation were detected at 1.35 and 1.68 eV, and have been attributed to donor-acceptor pairs and free-electron to acceptor transitions respectively.On a obtenu des spectres de luminescence a 1,s K sur des monocristaux de CdlnzS, sous excitation en continu ou en impulsions. Dans ce dernier cas, des fenEtres variables en temps ont C t t utilisies, permettant I'observation de I'tvolution des spectres entre 0 et 100 FS apr6s I'excitation. Quatre bandes d'kmission ont Ct C observdes sous toutes conditions d'excitation. Sous excitation extrinseque, deux bandes additionnelles observCes a 1,35 et 1,68 eV sont attributes respectivement a des transitions donneurs-accepteurs et electrons libresaccepteurs.

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Section: Discussionsupporting

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Time-resolved photoluminescence in CdIn₂S₄

Charbonneau¹,

Fortin²,

Beauvais³

1987

Can. J. Phys.

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“…The considerable concentration of intrinsic defects, characteristic of AITBillCl* compounds, is responsible for the formation of band tails of the density states (D). The already existing models of local levels proposed in [3,5,6,151 were also taken into consideration in developing the present model.…”

Section: Sample Preparation and Experimentalmentioning

confidence: 99%

Influence of defect generation processes in CdIn2S4 single crystals on the photoluminescence and Raman scattering spectra

Куликова¹,

Kulyuk²,

Радауцан³

et al. 1988

Phys. Stat. Sol. (a)

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Photoluminescence (PL) and Raman scattering (RS) spectra obtained in CdIn2S4 single crystals in dependence of the applied heat treatment conditions are studied. The possibility is considered to explain the deformation of the integral PL spectrum by a model within which the local levels are due to the intrinsic defects of the ternary semiconductor. The presence of a wide‐band background in the RS spectra and the evident deformation of the PL spectra characteristic for sample subjected to a rapid cooling after annealing at temperatures not lower than Tc ≈︁ 300 to 320 °C are interpreted as being the result of a phase transition of the order‐disorder type. The latter occurs at T ≈︁ Tc and causes the conversion of the CdIn2S4 crystal structure from a normal spinel (T < Tc) into a partially inverted one (T > Tc ≈︁ 320 °C).

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“…In order to realize these applications, it is of primary importance to grow high-quality epilayers and characterize the fundamental properties. Such studies were carried out on the bulk crystals that were grown by chemical transport and Bridgman method for the past years [2,[5][6][7][8][9][10]. Also, the thin film of CdIn 2 S 4 deposited by using vacuum evaporation [11][12][13] had been achieved.…”

Section: Introductionmentioning

confidence: 99%

“…The band gap of the CdIn 2 S 4 at room temperature is 2.62 eV with the direct transition. The CdIn 2 S 4 is one of materials to have the potential capability for the applications of photoconductor, solar cell, and light emitting diode (LED) [1][2][3][4]. In order to realize these applications, it is of primary importance to grow high-quality epilayers and characterize the fundamental properties.…”

Section: Introductionmentioning

confidence: 99%